RB520GM9-30 LUGUANG | Alldatasheet
Document overview
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Technical content
Absolute Maximum Ratings （ Ta = 25 ℃） Symbol Parameter Value Units V R Reverse Voltage 30 V V RRM Repetitive Peak Reverse Voltage 30 V I O Continuous Forward Current 100 mA I FSM Non-Repetitive Peak Forward Current 0.6 A T J Junction Temperature 125 ℃ T STG Storage Temperature -55 to +125 ℃ *1: 8.3ms Single Half Sine-Wave Electrical Characteristics （ Ta = 25 ℃） Symbol Parameter Conditions Min TYP Max Units V F Forward Voltage I F = 1mA I F = 10mA I F = 30mA 0. 3 2 0.40 0.47 0.37 0.45 0.55 V V V BV R B r e a k d o w n V o l t a g e I R = 10μA 30 V I R Reverse Current V R = 10V 0.5 μA Schottky Barrier Diode RB520GM9-30 ◇ Low current rectification ◇ Low reverse current ◇ SOD923 Micro SMD package (Fig-1) Dimensions: 1.0 mm x 0.6 mm (0.039” x 0.024”) ◇ RoHS compliant ◇ UL-94 V-0 / Green EMC ◇ Matte Tin Lead finish (Pb-Free) ◇ Moisture Level Sensitivity 1 ◇ Cathode Band / Device marking: Device Marking Code RB520GM9-30 C1 Fig –1 Package SOD923 http://www.lgesemi .com mail:lge@lgesemi.comRevision:20170701-P1
Ordering Information
Device Package Shipping Tape wide Embos pitch Tape specification Notes RB520GM9-30 SOD923 8,000 pcs / 7” Reel 8 mm 2 mm Conductive Package Dimensions Schottky Barrier Diode RB520GM9-30 http://www.lgesemi .com mail:lge@lgesemi.comRevision:20170701-P1