RB520GM9-30 SHUNYE | Alldatasheet
Document overview
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Technical content
Absolute Maximum Ratings （Ta = 25 ℃） Symbol Parameter Value Units VR Reverse Voltage 30 V VRRM Repetitive Peak Reverse Voltage 30 V IO Continuous Forward Current 100 mA IFSM Non-Repetitive Peak Forward Current *1 0.6 A TJ Junction Temperature 125 ℃ TSTG Storage Temperature -55 to +125 ℃ *1 8.3 ms single half sine-wave Electrical Characteristics （Ta = 25 ℃） Symbol Parameter Conditions Min TYP Max Units VF Forward Voltage IF = 1mA IF = 10mA IF = 30mA 0.32 0.40 0.47 0.37 0.45 0.55 V V V BVR Breakdown Voltage IR = 10μA 30 V IR Reverse Current VR = 10V 0.5 μA M9 30 ◇ Low current rectification ◇ Low reverse current ◇ SOD923 Micro SMD package ◇ RoHS compliant Matte Tin Lead finish (Pb-Free) Cathode Band / Device marking Device Marking Code RB520GM9-30 E SOD923 100mA SOD- 923 SURFACE MOUNT Schottky Barrier Diode RB520G www.shunyegroup.com.cn
FEATURES
Ordering Information
Device Package Shipping Tape wide Embos pitch Tape specification Notes RB520GM9-30 SOD923 8,000 pcs / 7” Reel 8 mm 2 mm Conductive Package Dimensions www.shunyegroup.com.cn