RB520G-30 YEASHIN | Alldatasheet
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http://www.yeashin.com 1 REV.02 20120305 RB520G-30 Schottky barrier diode zApplications Low current rectification zFeatures 1) Ultra Small mold type. 2) Low I R 3) High reliability. zConstruction Silicon epitaxial planar zAbsolute maximum ratings (Ta=25°C) Symbol Unit V R V Io mA I FSM mA Tj ℃ Tstg ℃ Parameter zElectrical characteristics (Ta=25°C) Sym bol Min. Typ. Max. Unit Conditions V F -- 0.45 V I F =10m A I R -- 0.5 µA V R =10Verse current Param eter orward voltage Rev F Reverse voltage(DC) Average rectified forward current -40 to +125 Limits 100 orward current surge peak （60Hz・1cyc） 500 125 F Junction temperature Storage temperature P b - free pack age is available zD evice M ark ing Silicon epit Device Marking Shipping RB520G-30 10000/Tape&Reel E RB520G-30 3000/Tape&Reel E SOD– 723 ANODE CATHODE H
http://www.yeashin.com 2 REV.02 20120305 RB520G-30 DEVICE CHARACTERISTICS Electrical characteristic curves (Ta=25°C) FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS REVERSE POWER DISSIPATION:P R (W) REVERSE VOLTAGE:VR(V) VR-P R CHARACTERISTICS 0.001 0.01 0.1 100 1000 0 100 200 300 400 500 600 100 1000 10000 100000 1000000 01 0 20 30 100 0 5 10 15 20 f=1MHｚ 320 330 340 350 360 370 Ta=25℃ IF=10mA n=30pcs 100 200 300 400 500 600 700 800 900 1000 AVE:100.5nA Ta=25℃ VR=10V n=30pcs AVE:15.94pF Ta=25℃ f=1MHz VR=0V n=10pcs AVE:3.90A 8.3ms Ifsm 1cyc 11 0 100 8.3ms Ifsm 1cyc 8.3ms 1 10 100 t Ifsm 100 1000 0.001 0.1 10 1000 Rth(j-a) Rth(j-c) IM=10mA IF=100mA 300u time Mounted on epoxy board 0.02 0.04 0.06 0.08 0.1 0 0.05 0.1 0.15 0.2 AVE:338.8mV Ta=-25℃ Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ Ta=125℃ Ta=25℃ Ta=75℃ DC D=1/2 Sin(θ＝180) 0.005 0.01 0.015 0.02 0 5 10 15 20 25 30 Sin(θ＝180) DC D=1/2
http://www.yeashin.com 3 REV.02 20120305 RB520G-30 PACKAGE OUTLINE & DIMENSIONS AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 0.1 0.2 0.3 0 25 50 75 100 125 0.1 0.2 0.3 02 5 50 75 100 125 T Tj=125℃ D=t/Tt VR Io VR=15V T Tj=125℃ D=t/Tt VR Io VR=15V Sin(θ＝180) DC D=1/2 Sin(θ＝180) DC D=1/2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM MIN NOM MAX MILLIMETERS A 0.49 0.52 0.55 b 0.25 0.28 0.32 c 0.08 0.12 0.15 D 0.95 1.00 1.05 E 0.55 0.60 0.65 1.35 1.40 1.45 L 0.15 0.20 0.25 H E 0.019 0.020 0.022 0.0098 0.011 0.013 0.0032 0.0047 0.0059 0.037 0.039 0.041 0.022 0.024 0.026 0.053 0.055 0.057 0.006 0.0079 0.010 MIN NOM MAX INCHES D E b c A L −Y− −X− 0.08 (0.0032) XY H E 0.45 0.0177 0.50 0.0197 1.1 0.043 /C0466 mm inches /C0467 SCALE 10:1 SOLDERING FOOTPRINT*