RB520CS-30T2R ROHM | Alldatasheet

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www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Schottky barrier diode RB520CS-30 Applications  Dimensions (Unit : mm)  Land size figure (Unit : mm) Low current rectification Features 1) Ultra Small power mold type. (VMN2) 2) Low IR 3)High reliability. Construction Structure Silicon epitaxial planar Taping specifications (Unit : mm) Absolute maximum ratings (Ta25C) Symbol Unit VR V Io mA IFSM mA Tj C Tstg C Electrical characteristics (Ta25C) Symbol Min. Typ. Max. Unit VF - - 0.45 V IF=10mA IR - - 0.5 A VR=10V Parameter Limits Reverse voltage (DC) 30 Average rectiied forward current 100 Forward current surge peak （60Hz/1cyc） 500 Junction temperature 150 Storage temperature 40 to 150 Parameter Conditions Forward voltage Reverse current VMN2 0.55 0.5 0.450.45 1/3 2011.05 - Rev.D

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB520CS-30 0.001 0.01 0.1 100 1000 0 100 200 300 400 500 600 0.02 0.04 0.06 0.08 0.1 0 0.05 0.1 0.15 0.2 100 1000 0.001 0.01 0.1 1 10 100 1000 Rth(j-a) Rth(j-c) 1ms IM=10mA IF=100mA 300us time Mounted on epoxy board 0.005 0.01 0.015 0.02 0 5 10 15 20 25 30 1 10 100 t Ifsm 100 200 300 400 500 600 700 800 900 1000 AVE : 100.5nA 100 0 5 10 15 20 1 10 100 8.3ms Ifsm 1cyc 8.3ms AVE : 3.90A 8.3ms Ifsm 1cyc 100 1000 10000 100000 1000000 01 0 2 0 3 0 320 330 340 350 360 370 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME : t(ms) IFSM-t CHARACTERISTICS TIME : t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (°C/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS REVERSE POWER DISSIPATION:PR (W) REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS f=1MHｚ Ta=25C IF=10mA n=30pcs Ta=25C VR=10V n=30pcs AVE : 15.94pF Ta25C f1MHz VR0V n10pcs AVE:338 : 8mV Ta=-25C Ta=125C Ta=75C Ta=25C Ta=-25C Ta=125C Ta=25C Ta=75C DC D1/2 Sin(=180) Sin(=180) DC D1/2 2/3 2011.05 - Rev.D

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB520CS-30 0.1 0.2 0.3 0 25 50 75 100 125 0.1 0.2 0.3 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta(・C) Derating Curve"(Io-Ta) AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPARATURE : Tc(C) Derating Curve"(Io-Tc) T Tj=125C D=t/Tt VR Io VR=15V T Tj=125C D=t/Tt VR Io VR=15V Sin(=180) DC D=1/2 Sin(=180) DC D=1/2 3/3 2011.05 - Rev.D

R1120Awww.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://ww w.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes