RB520CS-30 YEASHIN | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

Extremelysmall surface mounting type. (SOD923) Low I High reliability. z Construction Silicon epitaxial planar 1 2 Cathode Anode Device Marking And Ordering Inf ormation Device Marking Shipping RB520CS-30 E 8000/Tape&Reel We declare that the material of product compliance with RoHS requirements. 500 mA Forward voltage V F

0.50 V I

F =20mA SOD-923 H

http://www.yeashin.com 2 REV.02 20130402 RB520CS-30 DEVICE CHARACTERISTICS 0.001 0.01 0.1 100 1000 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS REVERSE POWER DISSIPATION:P R (W) REVERSE VOLTAGE:VR(V) VR-P R CHARACTERISTICS 100 1000 10000 100000 1000000 01 0 2 0 3 0 100 0 5 10 15 20 f=1MHｚ 320 330 340 350 360 370 Ta=25℃ VF=10mA n=30pcs 100 200 300 400 500 600 700 800 900 1000 AVE:100.5nA Ta=25℃ VR=10V n=30pcs AVE:15.94pF Ta=25℃ f=1MHz VR=0V n=10pcs AVE:3.90A 8.3ms Ifsm 1cyc 11 0 1 0 0 8.3ms Ifsm 1cyc 8.3ms 1 10 100 t Ifsm 100 1000 0.001 0.1 10 1000 Rth(j-a) Rth(j-c) 1ms IM=10mA IF=100mA 300us time Mounted on epoxy board 0.02 0.04 0.06 0.08 0.1 0 0.05 0.1 0.15 0.2 0.005 0.01 0.015 0.02 0 5 10 15 20 25 30 AVE:338.8mV Ta=-25℃ Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ Ta=125℃ Ta=25℃ Ta=75℃ DC D=1/2 Sin(θ＝180) Sin(θ＝180) DC D=1/2

http://www.yeashin.com 3 REV.02 20130402 RB520CS-30 DEVICE CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 0.1 0.2 0.3 0 25 50 75 100 125 150 0.1 0.2 0.3 0 25 50 75 100 125 150 T Tj=150℃ D=t/Tt VR Io VR=15V T Tj=150℃ D=t/Tt VR Io VR=15V Sin(θ＝180) DC D=1/2 Sin(θ＝180) DC D=1/2

http://www.yeashin.com 4 REV.02 20130402 RB520CS-30 PACKAGE OUTLINE & DIMENSIONS SOD 923 DIM MIN NOM MAX MILLIMETERS A 0.34 0.39 0.43 b 0.15 0.20 0.25 c 0.07 0.12 0.17 D 0.75 0.80 0.85 E 0.55 0.60 0.65 0.95 1.00 1.05 L 0.05 0.10 0.15 H E 0.013 0.015 0.017 0.006 0.008 0.010 0.003 0.005 0.007 0.030 0.031 0.033 0.022 0.024 0.026 0.037 0.039 0.041 0.002 0.004 0.006 MIN NOM MAX INCHES D E b c A L −Y− −X− 0.08 (0.0032) XY H E 0.45 0.0177 0.50 0.0197 1.1 0.043 /C0466 mm inches /C0467 SCALE 10:1 SOLDERING FOOTPRINT*