RB501V-40 GWSEMI | Alldatasheet

Document overview

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  • PDF pages: 3

Technical content

Features

  • Small surface mounting type
  • High reliability

Applications

  • Low current rectification PINNING PIN

DESCRIPTION

Marking Code: Simplified outline SOD-323 and symbol Absolute Maximum Ratings a = 25 O Parameter Symbol Value Unit Peak Reverse Voltage V RM V Reverse Voltage V R V Mean Rectifying Current I O 0.1 A Peak Forward Surge Current (60 Hz for 1 Cyc.) I FSM A Junction Temperature T j 125 O C Storage Temperature Range T stg - 40 to + 125 O C Characteristics at T a = 25 O C Parameter Symbol Typ. Max. Unit Forward Voltage at I F = 100 mA at I F = 10 mA V F V F 0.55 0.34 V V Reverse Current at V R = 10 V I R µA Capacitance Between Terminals at V R = 10 V, f = 1 MHz C T pF Note: ESD sensitive product handling required. MARKING: SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE 501V-40 RB

Figure2 Reverse characteristics Figure4 Derating curve(mounting on glass epoxy PCBs) VR .REVERSE VOLTAGE(V) Fig ure1 For ward characteristics VF.FORWARD VOLTAGE (V) TA.AMBIENT TEMPERATURE( O Figure3 Capacitance between terminals characteristics VR .REVERSE VOLTAGE (V) IR .REVERSE CURRENT(A) IF.FORWARD CURRENT (mA)C T.CAPACITANCE BERWEEN TERNINALS(pF) I CURRENT(%) 1000 100 10µ 100µ 10m 0.1 0 4010 20 30 100 0 5 10 15 20 25 30 35 100 75 125500 25 100 125 O C O C -25 O C O C 125 O C O C O C 501V-40 RB

Plastic surface mounted package; 2 leads SOD-323 501V-40 RB