RB500V-40 TSC | Alldatasheet
Document overview
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Technical content
Features
Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code High temperature soldering guaranteed: 260°C/10s C Units A
Ordering Information
°C/W E Value 0.1 500 200 mW Reverse Voltage Junction and Storage Temperature Range T J, TSTG -40 to + 125 Mean Forward Current Thermal Resistance (Junction to Ambient) (Note ) IO RθJA 60HZ for 1Cyc. Non-Repetitive Peak Forward Surge Current Weight : 4.85±0.5 mg 1.0 Type Number Rating at 25°C ambient temperature unless otherwise specified. VVRM Power Dissipation Peak Reverse Voltage PD A V Unit (inch) Pin Configuration Marking Code : S9 Dimensions F Unit (mm) A B Polarity : Indicated by cathode band D A B C E F 1.60 0.063 0.113 2.86 0.83 0.033 0.63 0.025 Version :A11
200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode
Electrical Characteristics
Reverse Breakdown Voltage I R= IF= VR= Junction Capacitance Tape & Reel specification Reel width W1 14.4 Max P1 2.00 ±0.05 Overall tape thickness T 0.23 ± 0.05 Tape width W 8.00 ±0.20 E 1.75 ±0.10 Punch hole position F 3.50 ±0.05 Sprocke hole pitch Embossment center Sprocke hole position P0 4.00 ±0.10 178 ± 1 Carrier width A Reel outside diameter D d Carrier length B Reel inner diameter D1 55 Min Sprocket hole 1.5 ± 0.1 Feed hole width D2 13.0 ± 0.20 Item Symbol Dimension(mm) Carrier depth C 1.68 ±0.10 1.7 ± 0.10 Min 3.73 ± 0.10 - 0.45 UnitsMax pF Symbol 45 - V R= 0V, f=1.0MHz - CJ 6.0 V VF IR V(BR) V μA Type Number 100uA 10mA 10V Forward Voltage Reverse Leakage Current Top Cover Tape Carieer Tape Any Additional Label (If Required) TSC label D1D2D T C d P1 A B F W E Version : A11
200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode Rating and Characteristic Curves Reverse Voltage (V) Version : A11