RB496EA

RB496EA ROHM | Alldatasheet

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Rev.A 1/3 Schottky barrier diode RB496EA zApplications Low current rectification zFeatures 1) Small mold type (TSMD5) 2) Low IR 3) High reliability zStructure Silicon epitaxial planer zExternal dimensions (Unit : mm) zLand size figure (Unit : mm) zStructure ROHM : TSMD5 dot (year week factory) + day 2.9±0.1 2.8±0.2 1.9±0.2 1.6 ＋0.2 －0.1 0.95 0.95 0.4 ＋0.1 －0.05 各リードとも同寸法 0～0.1 0.33±0.03(1) (3) (5) (2) (4) 0.3～0.6 0.85±0.1 1.0Max 0.7±0.1 0.16±0.1 0.06 Each lead has same dimension TSMD5 0.8 1.0 min. 0.45 0.35 0.7 0.95 0.450.35 2.4 0.95 1.9 zTaping dimensions (Unit : mm) 3.2±0.08 4.0±0.1 3.5±0.05 1.75±0.1 8.0±0.2 1.1±0.08 3.2±0.08 φ1.1±0.1 3.2±0.08 0.3±0.1 0～0.5 5.5±0.2 zAbsolute maximum ratings (Ta=25°C) Symbol Unit VR V zElectrical characteristic (Ta=25°C) IoA 1 A IFSM A Tj ℃ Tstg ℃ (*1) Rating of per diode Junction temperature 125 Storage temperature -40 to +125 verage rectified forward current (*1) Forward current surge peak (60Hz・1cyc) (*1) 10 Parameter Limits Reverse voltage 20 Symbol Min. Typ. Max. Unit VF1 - - 0.35 V IF=0.5A VF2 - - 0.40 V IF=1A Reverse current IR - - 500 µA VR=10V ConditionsParameter Forward voltage

Rev.A 2/3 zElectrical characteristic curves FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(mA) 100 1000 0 200 400 600 Ta=-25℃ Ta=125℃ Ta=75℃ Ta=25℃ REVERSE CURRENT:IR(uA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 100 1000 10000 100000 0 5 10 15 20 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 1000 0 5 10 15 20 25 30 f=1MHz VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) 370 380 390 400 410 420 AVE:384.2mV Ta=25℃ IF=1A n=30pcs FORWARD VOLTAGE:VF(mV) VF DISPERSION MAP 300 310 320 330 340 350 AVE:319.7mV Ta=25℃ IF=0.5A n=30pcs REVERSE CURRENT:IR(uA) IR DISPERSION MAP 100 150 200 250 300 Ta=25℃ VR=10V n=30pcs AVE:62.1uA CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP 200 210 220 230 240 250 260 270 280 290 300 AVE:270.5pF Ta=25℃ f=1MHz VR=0V n=10pcs IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) AVE:14.6A 8.3ms Ifsm 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1 10 100 8.3ms Ifsm 1cyc 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS 1 10 100 t Ifsm TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 100 1000 0.001 0.1 10 1000 Rth(j-a) Rth(j-c) 1ms IM=10mA IF=0.5A 300us time Mounted on epoxy board FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 0.4 0.6 0.8 00 .5 11 .5 2 Per chip DCD=1/2 Sin(θ＝180)

Rev.A 3/3 REVERSE POWER DISSIPATION:PR (W) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃) Derating Curve(Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 0.2 0.4 0.6 0.8 0 5 10 15 20 Per chip 0.5 1.5 2.5 0 25 50 75 100 125 Per chip 0.5 1.5 2.5 02 5 50 75 100 125 Per chip T Tj=125℃ D=t/Tt VR Io VR=10V T Tj=125℃ D=t/Tt VR Io VR=10V Sin(θ＝180) DC D=1/2 Sin(θ＝ 180) DC D=1/2 Sin(θ＝180) DC D=1/2

Appendix1-Rev1.1 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.