RB495D TSC | Alldatasheet

Document overview

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Technical content

Features

—Weight :0.008 gram (approximately) A

Ordering Information

E F D G B A C D G E F Package SOT23 Maximum Ratings

Electrical Characteristics

IR= 100μ A Forward Voltage IF= 10mA IF= 200mA VR= 25V Junction Capacitance V R=0, f=1.0MHz Notes:1. 8.3ms singlehalf Sine-wave Reverse Leakage Current VF Reverse Voltage VR 25 V IR 70 μA V 1.5 ValueSymbol PDPower Dissipation mW Maximum Ratings and Electrical Characteristics 0.3 0.5 pFC J -5 0 Part No. RB495D RF Packing 3Kpcs/7" Reel Type Number Symbol Units V Min Max Reverse Breakdown Voltage V(BR) °C-40 to + 125Junction and Storage Temperature Range TJ, TSTG ANon-Repetitive Peak Forward Surge Current (Note 1) VRRMRepetitive Peak Reverse Voltage Mean Forward Current IO V 350 mA IFSM 200 Rating at 25°C ambient temperature unless otherwise specified. Type Number Units Electrical Symbol 1 2 Anode Cathode Anode/Cathode Version : A09

40V,350mA,SMD Schottky Diode Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Forward Characteristics 0.01 0.1 100 1000 Instantaneous Forward Current (mA) FIG 3 Admissible Power Dissipation Curve 100 150 200 250 0 25 50 75 100 125 150 Power Dissipation (mW) FIG 4 Typical Junction Capacitance 100 0 5 10 15 20 25 30 Junction Capacitance (pF) Ambient Temperature (°C) Reverse Voltage (V) Ta=25°C FIG 2 Reverse Current vs Reverse Voltage 100 1000 10000 0 1 02 03 04 05 06 0 Reverse Current (uA) Ta=25°C Instantaneous Forward Volatge (V) Reverse Volatge (V) Version : A09