RB495D SHUNYE | Alldatasheet
Document overview
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Technical content
FEATURES
z Small Surface Mounting Type z Low Forward Voltage z Low Reverse Current z High Reliability
APPLICATIONS
z General Rectification MARKING: D3Q MAXIMUM RATINGS ( T a =25 unless otherwise noted ) Symbol Parameter Value Unit V RRM Peak Repetitive Reverse Voltage V RWM Working Peak Reverse Volt age V V R(RMS) RMS Reverse Voltage V I O Continuous Forward Curr ent 400 mA I FSM Non-repetitive Peak Forward Surge C urrent @t=8.3ms A P D Power Dissipation 250 mW R θ JA Thermal Resistance from Junction to Ambient 400 T J Operating Junction Temperature Range 40 ~ + 125 T stg S torage Temperature Range -55 +150 ELECTRICAL CHARACTERISTICS(T a =25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V (BR) I R =100 μ A V Reverse current I R V R =25V μ A I F =10mA 0.3 Forward voltage V F I F =200mA 0.5 V SOT-23 RB4 SCHOTT KYB ARRIER DIODE www.shunyegroup.com.cn V2.22
0.1 100 0 2 0 3 0 4 0.1 100 1000 10000 100000 T a =25 1MHz Capacitan ce C haracteristics CAPACITANCE BETWEEN TERMINALS C T (pF) REVERSE VOLTAGE V R (V) Power Deratin g Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) Forward C h aracteristics FORWARD VOLTAGE V F (mV) FORWARD CURRENT I F (mA) T a T a 400 Pulsed Pulsed Reverse Charact e ristics REVERSE VOLTAGE V R (V) REVERSE CURRENT I R (uA) T a =25 T a =100 www.shunyegroup.com.cn V2.22 RB4
x A 0.9 1.150 0.035 0.045 0.000 0.100 0.000 0.004 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 2.250 2.550 0.089 0.100 e 1.800 2.000 0.071 0.079 L 0.300 0.500 0.012 0.020 θ
0.550 REF
0.022 REF
0.950 TYP
0.037 TYP
T -23 Package Outline Dimensions SO T -23 Suggested Pad Layout www.shunyegroup.com.cn V2.22 RB4
www.shunyegroup.com.cn V2.22 RB4