RB495D_11 ROHM | Alldatasheet
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www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RB495D Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification. Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability Construction Silicon epitaxial planar Structure Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25°C) Symbol Unit VRM V VR V Io mA IFSM A Tj °C Tstg °C Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit VF1 - - 0.30 V I F=10mA VF2 - - 0.50 V I F=200mA IR1 -- 7 0 μA VR=25V Conditions Forward voltage Parameter Limits Reverse voltage (repetitive peak) 40 Reverse voltage (DC) 25 Average rectified forward current (*1) 0.4 Forward current surge peak (60Hz・1cyc) (*1) 2 Junction temperature 125 Parameter Reverse current Storage temperature 40 to 125 (*1) Rating of per diode : lo/2 ROHM : SMD3 JEITA : SC-59 week code JEDEC :S0T-346 0.4 ＋0.1 －0.06 2.9±0.2 2.8±0.2 1.9±0.2 1.6 ＋0.2 －0.1 0.95 0.95 ＋0.1 －0.05 各リードとも 同寸法 0～0.1 0.15 1.1±0.2 0.01 0.8±0.1 (2) (1) (3) 0.3～0.6 Each lead has same dimension SMD3 1.0MIN. 0.8MIN. 2.40.95 1.9 3.2±0.1 4.0±0.1 3.5±0.05 1.75±0.1 8.0±0.2 1.35±0.1 3.2±0.1 φ1.05MIN 3.2±0.1 0.3±0.1 5.5±0.20～0.5 1/3 2011.05 - Rev.B
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB495D AVE:8.6ns Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(uA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS trr DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) 0.001 0.01 0.1 0 100 200 300 400 500 600 Ta=-25℃ Ta=125℃ Ta=75℃ Ta=25℃ 0.1 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 100 0 5 10 15 20 25 30 f=1MHz 330 340 350 360 370 380 AVE:359.0mV Ta=25℃ IF=200mA n=30pcs 100 120 140 160 180 200 Ta=25℃ VR=25V n=30pcs AVE:33.62uA 100 AVE:71.8pF Ta=25℃ f=1MHz VR=0V n=10pcs AVE:12.50A 8.3ms Ifsm 1cyc 1 10 100 8.3ms Ifsm 1cyc 8.3ms 1 10 100 t Ifsm 100 1000 0.001 0.1 10 1000 Rth(j-a) Rth(j-c) 1ms IM=1mA IF=10mA 300us time Mounted on epoxy board 0.1 0.2 0.3 Per chip DC D=1/2 Sin(θ＝180) 2/3 2011.05 - Rev.B
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB495DREVERSE POWER DISSIPATION:PR (W) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 0.2 0.4 0.6 0.8 0 1 02 03 04 0 Per chip Sin(θ＝180) DC D=1/2 0.1 0.2 0.3 0.4 0.5 0 25 50 75 100 125 Per chip 0.1 0.2 0.3 0.4 0.5 0 25 50 75 100 125 Per chip Sin(θ＝180) DC D=1/2 T Tj=125℃ D=t/Tt VR Io VR=20V T Tj=125℃ D=t/Tt VR Io VR=20V Sin(θ＝180) DC D=1/2 3/3 2011.05 - Rev.B
R1120Awww.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://ww w.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes