RB495D ROHM | Alldatasheet
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!!!!Applications Low current rectification !!!!Features 1) Small surface mounting type. (SMD3) 2) Two diodes with common cathode for excellent installation efficiency. 3) High reliability. !!!!Construction Silicon epitaxial planar !!!!External dimensions (Units : mm) 0.95 0.95 ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 (All leads have same dimensions) D 3 Q 2.8±0.2 2.9±0.2 1.9±0.2 0.8±0.1 0.4 +0.1 −0.05 1.1 +0.2 −0.1 0.15+0.1 −0.06 1.6 +0.2 −0.1 0.3~0.6 0~0.1 !!!!Circuit !!!!Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Peak reverse voltage V RM V DC reverse voltege V R V IO A IFSM A Junction temperature 125 °C Storage temperature °C Operating temperture 0.4 Mean rectifying current∗1 ∗1 Mean output current per element : IO / 2 ∗2 60Hz for 1 Tj Tstg Topr Peak forward surge current∗2 −40~+125 −30~+85 !!!!Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage − 0.30 V I F=10mA − 0.50 V I F=200mA Reverse current IR − − 70 µAV R=25V Note) ESD sensiteve product handling required. VF1 VF2
!!!!Electrical characteristic curves (Ta = 25°C) 100µ 10m 100m FORWARD CURRENT : IF (A) FORWARD VOLTAGE : VF (V) Ta =125 −40 Fig.1 Forward characteristics 10µ 100µ 10m 100m 10 20 30 40 REVERSE VOLTAGE : VR (V) REVERSE CURRENT : IR (A) Ta=125°C 75°C 25°C 0°C Fig.2 Reverse characteristics 0 1 02 03 0 100 1 5 1 52 53 5 REVERSE VOLTAGE : VR (V) CAPACITANCE BETWEEN TERMINALS : CT (pF) Fig.3 Capacitance between terminals characteristics