RB491DT146 ROHM | Alldatasheet
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www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Shottky barrier diode RB491D Application Dimensions (Unit : mm) Lead size figure (Unit : mm) Low current rectification 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. Structure Silicon epitaxial planar Structure Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25C) Symbol Unit VRM V VR V Io A IFSM A Tj °C Tstg °C Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Conditions VF - - 0.45 V I F=1A IR - - 200 μA VR=20V Parameter Junction temperature Storage temperature (*1) Rating of per diode Forward current surge peak (60Hz・1cyc) (*1) 3 125 40 to 125 Features Forward voltage Reverse current Limits Parameter Reverse voltage (DC) Average rectified forward voltage (*1) Reverse voltage (repetitive peak) SMD3 1.0MIN. 0.8MIN. 2.40.95 1.9 3.2±0.1 4.0±0.1 3.5±0.05 1.75±0.1 8.0±0.2 1.35±0.1 3.2±0.1 φ1.05MIN 3.2±0.1 0.3±0.1 5.5±0.20～0.5 JEITA : SC-59 JEDEC :S0T-346 0.4 ＋0.1 －0.06 2.9±0.2 2.8±0.2 1.9±0.2 1.6＋0.2 －0.1 0.95 0.95 ＋0.1 －0.05 各リードとも 同寸法 0～0.1 0.15 1.1±0.2 0.01 0.8±0.1 (2) (1) (3) 0.3～0.6 1.1 0.2 0.1 Each lead has same dimension ROHM : SMD3 week code 1/3 2011.03 - Rev.D
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB491D 100 1000 0 5 10 15 20 25 30 0.1 100 1000 10000 100000 0 5 10 15 20 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ AVE:9.3ns Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(uA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS trr DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) f=1MHz 380 390 400 410 420 Ta=25℃ IF=1A n=30pcs AVE:399.2m 100 150 200 250 300 350 400 450 500 Ta=25℃ VR=20V n=30pcs AVE:37.93uA 100 110 120 130 140 150 160 170 180 190 200 AVE:159.8pF Ta=25℃ f=1MHz VR=0V n=10pcs AVE:11.1A 8.3ms Ifsm 1cyc 1 10 100 8.3ms Ifsm 1cyc 8.3ms 1 10 100 t Ifsm 100 1000 0.001 0.1 10 1000 Rth(j-a) Rth(j-c) 1ms IM=1mA IF=10mA 300us time 0.5 0 0.5 1 1.5 2 Per chip DC D=1/2 Sin(θ＝180) 0.001 0.01 0.1 0 100 200 300 400 500 600 Ta=-25℃ Ta=125℃ Ta=75℃ Ta=25℃ Mounted on epoxy board 2/3 2011.03 - Rev.D
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB491DREVERSE POWER DISSIPATION:PR (W) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 0.05 0.1 0.15 0.2 0.25 0.3 0 5 10 15 20 Per chip 0.5 1.5 2.5 0 25 50 75 100 125 Per chip 0.5 1.5 2.5 0 25 50 75 100 125 Sin(θ＝180) DC Per chip Sin(θ＝180) DC D=1/2 Sin(θ＝180) DCD=1/2 T Tj=125℃ D=t/Tt VR Io VR=10V T Tj=125℃ D=t/Tt VR Io VR=10V D=1/2 3/3 2011.03 - Rev.D
R1120Awww.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://ww w.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes