RB491D ROHM | Alldatasheet
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!Applications Low-power rectification For switching power supply !Features 1) Small surface mounting type. (SMD3) 2) Ultra low VF. (VF=0.40V Typ. at 1A) 3) IF=1.0A guaranteed despite the size. !Construction Silicon epitaxial planar !Circuit !!!!External dimensions (Units : mm) 0.3~0.6 0~0.1 0.8±0.1 2.8±0.2 2.9±0.2 0.95 0.95 1.9±0.2 ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 D 2 E 0.4 +0.1 −0.05 0.15+0.1 −0.06 1.6+0.2 −0.1 1.1+0.2 −0.1 (All leads have the same dimensions) !!!!Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Limits Unit VPeak reverse voltage VR 20 VDC reverse voltage IF 1.0 ADC forward current IFSM 3APeak forward surge current ∗ Tj 125 ˚CJunction temperature Tstg −40∼+125 ˚CStorage temperature ∗ 60Hz for 1 !!!!Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol Min. Typ. Max. Unit Conditions VF IR 0.45 200 V µA IF=1.0A VR=20V Note) ESD sensitive product handling required.
!!!!Electrical characteristic curves (T a=25°C) 100m 10m FORWARD CURRENT : IF (A) FORWARD VOLTAGE : VF (V) C˚521=aT C˚57 C˚52 C˚52− Fig.1 Forward characteristics Fig.2 Reversecharacteristics 0 2 03 04 05 06 07 0100.1µ 100µ 10µ 1000 100 REVERSE CURRENT : IR (mA) REVERSE VOLTAGE : VR (V) Ta=125˚C 75˚C 25˚C −25˚C Fig.3 Capacitance between terminals characteristics 01 0 1 5 2 0 2 5 3 0 3 5 4 051 1000 100 10000TERMINAL CAPACITANCE : CT (pF) REVERSE VOLTAGE : VR (V) f=1MHz 0.2 0.1 0.3 0.4 0.5 0.7 0.6 FORWARD POWER DISSIPATION : PF (W) AVERAGE RECTIFIED FORWARD CURRENT : IO (A) D=0.05 D=0.1 D=0.2 D=0.3 D=0.8 DC sine D=0.5 Tp T D=Tp/T Tj=Tj Max. IF IO Fig.4 Forward power dissipation characteristics 1.5 1.0 0.5 00 25 50 75 100 125 AVERAGE RECTIFIED FORWARD CURRENT : IO (A) AMBIENT TEMPERATURE : Ta (˚C) D=0.3 D=0.2 D=0.1 D=0.05 DC D=0.5 D=0.8 sine Tp T D=Tp/T VR=VRM /2 IF IO Fig.5 Derating curve (IO - Ta)