RB481Y-90_11 ROHM | Alldatasheet

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www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RB481Y-90 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) Low current rectification Features 1) Ultra small mold type. (EMD4) 2) Low VF 3) High reliability Construction Silicon epitaxial planar Structure Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25°C) Symbol Unit VRM V VR V Io mA IFSM A Tj °C Tstg °C Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Forward voltage VF - 0.55 0.61 V I F=100mA IR - 20 100 μA VR=90V Parameter Reverse current Conditions Storage temperature 40 to 125 (*1) Rating of per diode Forward current surge peak (60Hz・1cyc) (*1) 1 Junction temperature 125 Reverse voltage (DC) 90 Average rectified forward current (*1) 100 Parameter Limits Reverse voltage (repetitive peak) 90 EMD4 0.5 0.45 1.0 1.55 1.65±0.1 4.0±0.1 3.5±0.05 1.75±0.1 8.0±0.2 φ0.8±0.1 5.5±0.2 1.65±0.1 0.65±0.1 0.3±0.1 0～0.11PIN 1.65±0.01 1.7±0.05 ROHM : EMD4 JEITA : SC-75A Size dot (year week factory) 0.13±0.05 0.5±0.05 0～0.1 (1) (2) (4) (3) 0.50.5 1.0±0.1 0.22±0.05 1.6±0.1 1.2±0.1 1.6±0.1 1.6±0.05 1.6±0.05 1/3 2011.05 - Rev.C

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB481Y-90 AVE:11.7ns Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(s) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS trr DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) 0.1 100 0 100 200 300 400 500 600 Ta=-25℃ Ta=125℃ Ta=75℃ Ta=25℃ 0.01 0.1 100 1000 10000 0 1 02 03 04 05 06 07 08 09 0 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 100 0 5 10 15 20 25 30 530 540 550 560 570 580 AVE:552.0mV Ta=25℃ IF=0.1A n=30pcs 100 150 200 250 300 350 400 450 500 Ta=25℃ VR=90V n=30pcs AVE:29.31uA AVE:21.69pF Ta=25℃ f=1MHz VR=0V n=10pcs AVE:3.70A 8.3ms Ifsm 1cyc 1 10 100 8.3ms Ifsm 1cyc 8.3ms 1 10 100 t Ifsm 0.1 0.2 Per diode f=1MHz 100 1000 0.001 0.01 0.1 1 10 100 1000 Rth(j-a) Rth(j-c) 1ms IM=10mA IF=100mA 300us time Mounted on epoxy board DC D=1/2 Sin(θ＝180) 2/3 2011.05 - Rev.C

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB481Y-90 0.1 0.2 0.3 0 25 50 75 100 125 Per diode REVERSE POWER DISSIPATION:PR (W) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 0.2 0.4 0.6 0.8 0 2 04 06 08 0 Per diode 0.1 0.2 0.3 0 25 50 75 100 125 Per diode D=1/2 Sin(θ＝180) DC D=1/2 Sin(θ＝180) DCD=1/2 DC Sin(θ＝180) T Tj=125℃ D=t/Tt VR Io VR=45V T Tj=125℃ D=t/Tt VR Io VR=45V 3/3 2011.05 - Rev.C

R1120Awww.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://ww w.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes