RB480K ROHM | Alldatasheet
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!Applications Low current rectification !Features 1) Small surface mounting (UMD4) 2) Low IR. (I R=0.3µA Typ.) 3) This is a composite component and is ideal for reducing the number of components used. 4) High reliability. !!!!Construction Silicon epitaxial planar !!!!External dimensions (Units : mm) 0.1Min. 3 T 0∼0.1 0.7 0.9±0.1 0.15±0.05 1.25±0.1 2.1±0.1 2.0±0.2 0.6 0.65 1.25±0.1 0.65 0.65 1.3±0.1 0.3±0.1 0.2±0.1 0.2±0.1 0.2±0.1 0.1Min. 3 T 0∼0.1 0.7 0.9±0.1 0.15±0.05 1.25±0.1 2.1±0.1 2.0±0.2 0.65 0.65 1.3±0.1 0.65 0.65 1.3±0.1 0.25±0.1 0.25±0.1 1pin MARK 0.25±0.1 0.25±0.1 ROHM: UMD4 EIAJ: SC-82 JEDEC: SOT-343 ∗There are two different markings. !!!!Circuit !!!!Absolute maximum ratings (Ta=25°C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature VRM VR IO IFSM Symbol Tj Tstg 0.1 Limits 125 −40∼+125 V Unit V A A ∗60Hz for 1
!!!!Electrical characteristics (Ta=25°C) Parameter Typ. Forward voltage IF=10mA− 0.45 IF=100mA− 0.60 Reverse current Capacitance between terminals VR=10V− 1 VR=40V− 5 VR=10V, f=1MHz6.0 − VR=0V Symbol VF1 VF2 IR1 IR2 Ct1 Ct2 Min. − − 25 Max. V V µA µA pF pF Unit Conditions !!!!Electrical characteristic curves (T a=25°C) 10µ 100m 10m 100µ FORWARD CURRENT : IF (A) FORWARD VOLTAGE : VF (V) Fig.1 Foward temperature chraracteristics 10n 100µ 10µ 100n 01 0 51 5 2 0 3 5 25 30 REVERSE CURRENT : IR (A) REVERSE VOLTAGE : VR (V) Ta=125˚C 75˚C 25˚C Fig.2 Reverse temperature chraracteristics 100 04 26 8 1 4 10 12 CAPACITANCE BETWEEN TERMINALS : CT (pF) REVERSE VOLTAGE : VR (V) Fig.3 Capacitance between terminals chraracteristics 100µ 10m1m 100m 1 I surge (A) PULSE WIDTH (sec) PULSE WIDTH I surge Ta=25˚C Fig.4 Surge current chraracteristics