RB471E

RB471E_1 ROHM | Alldatasheet

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Rev.B 1/3 Symbol Min. Typ. Max. Unit Conditions VF1 -- 0.55 V IF=100mA VF2 -- 0.34 V IF=10mA everse current IR -- 30 µA VR=10V Capacitance between terminals Ct - - 6 pF VR=10V , f=1MHz ward voltage Parameter R For Schottky barrier diode RB471E zApplications Low current rectification zFeatures 1) Small mold type. (SMD5) 2) High reliability. zConstruction Silicon epitaxial planar z External dimensions (Unit : mm) z Land size figure (Unit : mm) z Structure ROHM : SMD5 JEITA : SC-74A week code 2.9±0.2 SMD5 0.35 0.8MIN. 1.0MIN. 0.450.35 1.9 0.95 0.95 0.45 0.6 2.4 1.9±0.2 1.6 ＋0.2 －0.1 0.95 0.95 各リードとも同寸法 0～0.1 (5) (3) (1) (4) (2) 0.3～0.6 0.15±0.1 0.06 1.1±0.2 0.1 0.8±0.1 0.3＋0.1 －0.05 Each lead has same dimension z Taping specifications (Unit : mm) zAbsolute maximum ratings (Ta=25°C) zElectrical characteristics (Ta=25°C) Symbol Unit VRM V VR V Io A IFSM A Tj ℃ Tstg ℃ Parameter Reverse voltage (DC) verage rectified forward current (*1) everse voltage (repetitive peak) Limits 0.1 ward current surge peak （60Hz・1cyc） (*1) 1 unction temperature torage temperature *1) Rating of per diode 125 -40 to +125 A R For J S 2.8±0.2 3.2±0.1 4.0±0.1 3.5±0.05 0±0.2 1.75±0.1 φ1.0MIN 3.2±0.1 1.35±0.1 3.2±0.1 0.3±0.1 5.5±0.20～0.5

Rev.B 2/3 zElectrical characteristic curves (Ta=25°C) FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) trr DISPERSION MAP FORWARD VOLTAGE:VF(mV) VF DISPERSION MAP RESERVE RECOVERY TIME:trr(ns) 0.01 0.1 100 0 100 200 300 400 500 600 0.01 0.1 100 1000 10000 0 5 10 15 20 25 30 35 100 01 0 20 30 f=1MHz 420 430 440 450 460 470 AVE:439.5mV Ta=25℃ IF=100mA n=30pcs 260 270 280 290 300 310 AVE:281.5mV Ta=25℃ IF=10mA n=30pcs Ta=25℃ VR=10V n=10pcs AVE:2.548uA AVE:5.50A AVE:6.20ns 0.1 1 10 100 8.3ms Ifsm 1cyc 8.3ms 0.1 1 10 100 8.3ms Ifsm 1cyc 100 1000 0.001 0.1 10 1000 Rth(j-a) Rth(j-c) Rth(j-a) Rth(j-c) Ta=-25℃ Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ Ta=125℃ Ta=25℃ Ta=75℃ 8.3ms Ifsm 1cyc Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 1ms IM=1mA IF=10mA 300us time Mounted on epoxy board AVE:5.10pF Ta=25℃ f=1MHz VR=10V n=10pcs

Rev.B 3/3 0.05 0.1 0.15 0.2 0.25 0.3 0 25 50 75 100 125 Per chip FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS REVERSE POWER DISSIPATION:PR (W) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 0.02 0.04 0.06 0.08 0.1 00 .1 0.2 Per chip 0.01 0.02 0.03 0.04 0.05 0.06 0.07 01 0 20 30 Per chip 0.05 0.1 0.15 0.2 0.25 0.3 02 5 50 75 100 125 Per chip DC D=1/2 Sin(θ＝180) Sin(θ＝180) DC D=1/2 Sin(θ＝180) DC D=1/2 Sin(θ＝180) DC D=1/2 T Tj=125℃ D=t/Tt VR Io VR=15V T Tj=125℃ D=t/Tt VR Io VR=15V

Appendix1-Rev1.1 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.