RB461F ROHM | Alldatasheet
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!Applications Low-power rectification For switching power supply !Features 1) Small surface mounting type. (UMD3) 2) Ultra low VF.(VF=0.45V Typ. at 0.7A) 3) IF=0.7A guaranteed despite the size. !Construction Silicon epitaxial planar !Circuit !!!!External dimensions (Units : mm) (All leads have the same dimensions) 0.3±0.1 0.1Min. 2.1±0.1 1.25±0.1 0∼0.1 0.15±0.05 0.9±0.1 0.60.3 2.0±0.2 1.3±0.1 0.650.65 3 B ROHM : UMD3 EIAJ : SC - 70 JEDEC : SOT - 323 !!!!Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Limits Unit V VR 20 V IF 0.7 A IFSM 3A Tj 125 ˚C Tstg −40∼+125 ˚C Peak reverse voltage DC reverse voltage DC forward current Peak forward surge current∗ Junction temperature Storage temperature ∗ 60Hz for 1 !!!!Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol Min. Typ. Max. Unit Conditions VF IR 0.49 200 V µA IF=700mA VR=20V Note) ESD sensitive product handling required.
!!!!Electrical characteristic curves (T a=25°C) Fig.1 Forward characteristics 100m 10m FORWARD CURRENT : IF (A) FORWARD VOLTAGE : VF (V) C˚521=aT C˚57 C˚52 C˚52− Fig.2 Reverse characteristics 0 2 03 04 05 06 07 0100.1µ 100µ 10µ 1000 100 REVERSE CURRENT : IR (mA) REVERSE VOLTAGE : VR (V) Ta=125˚C 75˚C 25˚C −25˚C Fig.3 Capacitance between terminals characteristics 01 0 1 5 2 0 2 5 3 0 3 5 4 051 1000 100 10000TERMINAL CAPACITANCE : CT (pF) REVERSE VOLTAGE : VR (V) f=1MHz 0.2 0.1 0.3 0.4 0.5 0.6 FORWARD POWER DISSIPATION : PF (W) AVERAGE RECTIFIED FORWARD CURRENT : IO (A) D=0.05 D=0.1 D=0.2 D=0.3 D=0.5 D=0.8 DC sine Tp T D=Tp/T Tj=Tj Max. IF IO Fig.4 Forward power dissipation characteristics 1.0 0.8 0.6 0.4 0.2 00 25 50 75 100 125 AVERAGE RECTIFIED FORWARD CURRENT : IO (A) AMBIENT TEMPERATURE : Ta (˚C) D=0.3 D=0.2 D=0.1 D=0.05 DC D=0.5 D=0.8 sine Tp T D=Tp/T VR=VRM / 2 IF IO Fig.5 Derating curve (when mounted on a glass epoxy PCBs board)