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WEJ ELECTRONIC CO.,LTD 2. 80¡ À 0. 05 1. 60¡ À0. 05 5 2. À À RB425D Schottky barrier Diodes
FEATURES
z Small surface mounting type z Low reverse current and low forward voltage z High reliability M a r k i n g : D 3 L Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃ Parameter Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 40 V Mean rectifying current IO 100 mA Peak forward surge current IFSM 1 A Junction temperature Tj 125 ℃ Storage temperature Tstg -40~+125 ℃ Electrical Ratings @TA=25 ℃ Parameter Symbol Min. Typ. Max. Unit Conditions VF1 0.55 V I F=100mA Forward voltage VF2 0.34 V I F=10mA Reverse current IR 30 µA VR=10V Capacitance between terminals CT 6 pF V R=10V, f=1MHZ SOT-23-3L RB4 25 D Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS