RB421D KEXIN | Alldatasheet
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Technical content
www.kexin.com.cn 1 Dio des Schottky Diodes RB421D (KB421D) ■ Features
- Small surface mounting type
- Low reverse current and low forward voltage
- High reliability 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Peak Reverse Voltage VRM 40 DC Blocking Voltage VR 40 Average Rectified Output Current Io 0.1 Peak Forward Surge Current IFM 1 Power Dissipation PD 250 mW Thermal Resistance Junction to Ambient RθJA 400 ℃/W Junction Temperature TJ 125 Storage Temperature range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 100 uA 40 IF= 10mA 0.34 IF= 100mA 0.55 Reverse voltage leakage current IR VR=10 V 30 uA Capacitance between terminals CT VR=10 V, f= 1 MHz 6 pF Forward voltage VF V ■ Marking Marking D3C
www.kexin.com.cn2 Diod es Schottky Diodes RB421D (KB421D) ■ Typical Characterisitics 0 5 10 15 20 0 25 50 75 100 125 150 100 150 200 250 300 0 100 200 300 400 500 600 100 0 10 20 30 40 0.01 0.1 100 1000 Ta=25℃ f=1MHz Capacitance Characteristics CAPACITANCE BETWEEN TERMINALS CT (pF) REVERSE VOLTAGE VR (V) Power Derating Curve POWER DISSIPATION PD (mW) AMBIENT TEMPERATURE Ta ( )℃ Forward Characteristics FORWARD VOLTAGE VF (mV) FORWARD CURRENT IF (mA) Ta=25℃ Ta=100 ℃ Reverse Characteristics REVERSE VOLTAGE VR (V) REVERSE CURRENT IR (uA) Ta=25 ℃ Ta=100 ℃