RB411D ROHM | Alldatasheet
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!!!!Applications Low power rectification For switching power supply !!!!Features 1) Small surface mounting type. (SMD3) 2) Low VF. (VF=0.43V Typ. at 0.5A) 3) High reliability. !!!!Construction Silicon epitaxial planar !!!!Circuit !!!!External dimensions (Units : mm)2.8±0.2 1.6 0.3~0.60.150.4 0~0.1 1.1 0.8±0.1 2.9±0.2 1.9±0.2 0.95 0.95 +0.2 −0.1 +0.2 −0.1 +0.1 −0.06+0.1 −0.05 ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 (All leads have the same dimensions) D 3 E !!!!Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 20 V Mean rectifying current IO 0.5 A Peak forward surge current ∗ IFSM 3A Junction temperature 125 °C Storage temperature °C Tj Tstg −40~+125 ∗ 60Hz for 1 !!!!Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF1 −− 0.3 V I F=10mA Forward voltage VF2 −− 0.5 V I F=500mA Reverse current IR −− 30 µAV R=10V Capacitance between terminals − 20 − pF V R=10V, f=1MHz Note) sensitive product handling required. CT
!!!!Electrical characteristic curves (Ta = 25°C) 100m 10m 100µ 10µ Ta =125 Ta =75 Ta =25 Ta FORWARD CURRENT : IF (A) FORWARD VOLTAGE : VF (V) Typ. pulse measurement Fig. 1 Forward characteristics REVERSE CURRENT : IR (A) REVERSE VOLTAGE : VR (V) Typ. pulse measurement 0 5 10 15 20 25 30 35 10m 100µ 10µ 0.1µ Fig. 2 Reverse characteristics Ta=125°C Ta=75°C Ta=25°C 100 1 000 51 0 1 5 2 0 2 5 REVERSE VOLTAGE : VR (V) CAPACITANCE BETWEEN TERMINALS : CT (pF) Fig. 3 Capacitance between terminals characteristic