RB225T-60

RB225T-60 ROHM | Alldatasheet

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Rev.A 1/3 Schottky barrier diode RB225T-60 zApplications zExternal dimensions (Unit : mm) zStructure Switching power supply ROHM : ＴO220FN ① Manufacture Date 1.2 1.3 0.8 (1) (2) (3) 10.0±0.3 0.1 5.0±0.2 8.0±0.2 12.0±0.2 2.8±0.2 0.1 4.5±0.3 0.1 0.7±0.1 0.05 2.6±0.5 13.5MIN 8.0 15.0±0.4 0.2 zFeatures 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability zConstruction Silicon epitaxial planar Symbol Unit VRM V VR 60R V Io A IFSM A Tj ℃ Tstg ℃Storage temperature -40 to +150 (*1)Tc=100℃max Per chip : Io/2 Forward current surge peak （60Hz・1cyc）（*1） 100 Junction temperature 150 everse voltage (DC) Average rectified forward current（*1） 30 Parameter Limits Reverse voltage (repetitive peak) 60 zAbsolute maximum ratings (Ta=25°C) zElectrical characteristic (Ta=25°C) Symbol Min. Typ. Max. Unit Forward characteristics VF - - 0.63 V IF=15A Reverse characteristics IR - - 600 µA VR=60V Thermal impedance θjc - - 1.75 ℃/W junction to case ConditionsParameter

Rev.A 2/3 zElectrical characteristic curves FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(uA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 0.01 0.1 100 0 100 200 300 400 500 600 700 Ta=150℃ Ta=125℃ Ta=-25℃ Ta=25℃ Ta=75℃ 0.1 100 1000 10000 100000 1000000 0 102 03 0 405 0 60 Ta=150℃ Ta=25℃ Ta=-25℃ Ta=125℃ Ta=75℃ 100 1000 10000 01 0 20 30 f=1MHz VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP 1900 1950 2000 2050 2100 2150 2200 AVE:2030.9pF Ta=25℃ f=1MHz VR=0V n=10pcs 100 150 200 250 300 350 400 450 500 Ta=25℃ VR=60V n=30pcs AVE:70.1nA 550 560 570 580 590 600 AVE:580.0mV Ta=25℃ IF=15A n=30pcs IFSM DISRESION MAP PEAK SURGE PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP RESERVE RECOVERY TIME:trr(ns) FORWARD CURRENT:IFSM(A) 100 150 200 250 300 AVE:176.0A 8.3ms Ifsm 1cyc AVE:23.3pF Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 100 1000 1 10 100 8.3ms Ifsm 1cyc 8.3ms 0.1 100 0.001 0.1 10 1000 Rth(j-a) Rth(j-c) 1ms IM=100mA IF=10A 300us time FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0 102 0 304 0 50 Sin(θ＝180) DC D=1/2 100 1000 1 10 100 t Ifsm EPEAK SURG

Rev.A 3/3 R OWE RSE P REVE DISSIPATION:PR (W) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 0 10 203 04 0 506 0 Sin(θ＝180) D=1/2 DC 0 255 07 5 100 125 150 Sin(θ＝180) D=1/2 DC 0 25 50 75 100 125 150 Sin(θ＝180) D=1/2 DC T Tj=150℃ D=t/Tt VR Io VR=30V T Tj=150℃ D=t/Tt VR Io VR=30V No break at 30kV C=100pF R=1.5kΩ C=200pF R=0Ω AVE:18.5kV ELECTROSTATIC DISCHARGE TEST ESD(KV) ESD DISPERSION MAP

Appendix1-Rev1.1 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.