DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RB225NS-40 lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm) General rectification lFeatures 1)Cathode common dual type.(LPDS) 2)Low IR lConstruction lStructure Silicon epitaxial planer lAbsolute maximum ratings (Tc=25C) Symbol Unit VRM V VR V Io A IFSM A Tj C Tstg C lElectrical characteristics (Tj=25C) Symbol Min. Typ. Max. Unit Conditions Forward voltage VF - 0.53 0.63 V IF=15A Reverse current IR - 0.08 0.5 mA VR=40V Thermal resistance Rth (J-C) - - 2.00 °C/W junction to case Storage temperature -40 to +150 (*1) 60Hz half sin wave, vesistive load at Tc=70°C. 1/2 Io per diode Parameter Average rectified forward current (*1) 30 Forward current surge peak (60Hz・1cyc) (*1) 100 Junction temperature 150 lTaping dimensions (Unit : mm) Parameter Limits Reverse voltage (repetitive) 40 Reverse voltage (DC) 40 ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day RB225 NS40 ① ② ③ 1/4 2011.10 - Rev.A

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB225NS-40 0.01 0.1 100 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(A) Ta=-25°C Ta=125°C Ta=25°C Ta=150°C Ta=75°C 0.1 100 1000 10000 100000 1000000 0 5 10 15 20 25 30 35 40 REVERSE CURRENT:IR(mA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Ta=-25°C Ta=25°C Ta=75°C Ta=150°C Ta=125°C 100 1000 10000 0 10 20 30 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 510 520 530 540 550 560 VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) AVE:534.5mV Ta=25°C IF=15A n=30pcs 100 200 300 400 500 600 700 800 900 1000 REVERSE CURRENT:IR(mA) IR DISPERSION MAP Ta=25°C VR=40V n=30pcs AVE:78.7mA 2450 2460 2470 2480 2490 2500 2510 2520 2530 2540 2550 AVE:2515.6pF Ta=25°C f=1MHz VR=0V n=10pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP 2/4 2011.10 - Rev.A

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB225NS-40 100 150 200 250 300 AVE:176.0A 8.3ms 1cyc IFSM DISPERSION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) AVE:27.4ns Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs trr DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) 100 1000 1 10 100 8.3ms IFSM 1cyc. 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 1 10 100 time IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS 0.1 100 0.001 0.01 0.1 1 10 100 1000 Rth(j-a) Rth(j-c) TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 0 10 20 30 40 50 FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS DC D=1/2 Sin(θ＝180) 3/4 2011.10 - Rev.A

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB225NS-40 0 10 20 30 40 D=1/2 DC Sin(θ＝180) REVERSE POWER DISSIPATION:PR (W) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 25 50 75 100 125 150 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) T Tj=150°C D=t/T t VR Io VR=20V D=1/2 Sin(θ＝180) D.C. No break at 30kV C=100pF R=1.5kΩ C=200pF R=0Ω AVE:25.7kV ELECTROSTATIC DISCHARGE TEST ESD(KV) ESD DISPERSION MAP 4/4 2011.10 - Rev.A

R1120Awww.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://ww w.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes