RB160WL-40 GWSEMI | Alldatasheet
Document overview
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Technical content
S C H O T T K Y B A R R I E R D I O D E
FEATURES
z Low forward voltage drop z Small power mold type z Low IR z Small current rectification
APPLICATIONS
z Low voltage rectification z High efficiency DC-to-DC conversion z Switch mode power supply z LED backlight for mobile application z Low power consumption applications z Ultra high-speed switching z Reverse polarity protection MARKING: MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VRRM Peak Repetitive Reverse Voltage VRWM Working Peak Reverse Voltage 40 V VR(RMS) RMS Reverse Voltage 28 V IO Average Rectified Output Current 1 A IFSM Non-repetitive Peak Forward Surge Current @ t=8.3ms 5 A PD Power Dissipation 150 mW RΘJA Thermal Resistance from Junction to Ambient 667 ℃/W Tj Operating Junction Temperature Range -40 ~ +125 ℃ Tstg Storage Temperature Range -55 ~ +150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V(BR) I R=10μA 40 V Reverse current IR VR=40V 50 μA Forward voltage VF IF=0.7A 0.55 V VR=1V; f=1MHz; Tj=25°C 50 pF Diode capacitance Cd VR=10V; f=1MHz; Tj=25°C 20 pF Reverse recovery time trr IF=IR=10mA; RL=100Ω; IR(meas)=1mA 15 ns AD Plastic-Encapsulate Diodes 160WL-40RB WBFBP-02L (1.6×0.8×0.5) unit:mm
0.01 0.1 01 0 2 0 3 0 4 0 0.1 100 1000 01 0 2 0 3 0 4 0 100 Reverse CharacteristicsForward Characteristics Ta=75℃Ta=125℃ Ta=25℃ FORWARD CURRENT IF (A) FORWARD VOLTAGE VF (mV) Ta=125℃ Ta=75℃ Ta=25℃ REVERSE CURRENT IR (uA) REVERSE VOLTAGE VR (V) Ta=25℃ f=1MHz Capacitance Characteristics REVERSE VOLTAGE VR (V) CAPACITANCE BETWEEN TERMINALS CT (pF) 0 25 50 75 100 125 100 150 200 Power Derating Curve POWER DISSIPATION PD (mW) AMBIENT TEMPERATURE Ta ( )℃ Typical Characteristics 160WL-40RB
Plastic surface mounted package; 2 leads WBFBP-02L PACKAGE OUTLINE