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Maximum Ratings and Electrical Characteristics @ T A = 25/c176C unless otherwise specified /c183 /c183 /c183 Mechanical Data /c183Case: Molded Plastic /c183 1of3 High reliability K L M C H B A SOD-123 Dim Min Max A 0.55 Typ B 1.40 1.70 C 3.55 3.85 H 2.55 2.85 J 0.00 0.10 K 1.00 1.35 L 0.25 0.40 M 0.10 0.15 α 0 8° All Dimensions in mm Low I R Symbol Unit V RM V V R V Io A I FSM A Tj ℃ Tstg ℃Storage temperature 150 Mounted on epoxy board. 180 °Harf sine wav e -40 to +150 Junction temperature Forward current surge peak （60Hz ・1cyc） Parameter Reverse voltage (repetitive peak) Reverse voltagec(DC) Average rectified forward current Limits Symbol Min. Typ. Max. Unit Conditions Forward voltage V F - - 0.73 V I F =1.0A Reverse current I R - - 100 µA V R =90V Parameter

FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(uA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS trr DISPERSION MAP RESERVE RECOVERY TIME:trr(ns) 条件：f=1MHz Ta=25℃ VR=100V n=30pcs AVE:478.3nA σ:36.1612nA 0.001 0.01 0.1 0 100 200 300 400 500 600 700 Ta=-25℃ Ta=25℃ Ta=75℃ Ta=125℃ Ta=150℃ 0.01 0.1 100 1000 10000 0 1 02 03 04 05 06 07 08 09 0 Ta=150℃ Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 100 110 120 130 140 150 160 170 180 190 200 AVE:149.6pF Ta=25℃ f=1MHz VR=0V n=10pcs 100 1000 0 5 10 15 20 25 30 f=1MHz 100 Ta=25℃ VR=90V n=30pcs AVE:4.655uA 600 610 620 630 640 650 AVE:632.1mV Ta=25℃ IF=1A n=30pcs 100 150 200 AVE:56.0A AVE:7.40ns Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 100 11 0 1 0 0 100 150 0.1 1 10 100 t Ifsm 0.5 1.5 00 . 511 . 52 DC Sin(θ＝180) D=1/2 8.3ms Ifsm 1cyc 8.3ms Ifsm 1cyc 8.3ms 0.1 100 1000 0.001 0.01 0.1 1 10 100 1000 Rth(j-a) Rth(j-c) Mounted on epoxy board 1ms IM=10mA IF=0.5A 300us time

DISSIPATION:P R (W) REVERSE VOLTAGE:VR(V) VR-P R CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 0.5 1.5 2.5 0 25 50 75 100 125 150 DC D=1/2 Sin(θ＝180) 0.5 1.5 2.5 0 25 50 75 100 125 150 Sin(θ＝180) D=1/2 DC 0.2 0.4 0.6 0.8 0 1 02 03 04 05 06 07 08 09 0 Sin(θ＝180) D=1/2 DC T Tj=150℃ D=t/Tt VR Io VR=45V T Tj=150℃ D=t/Tt VR Io VR=45V C=200pF R=0Ω C=100pF R=1.5kΩ AVE:1.70kV AVE:10.7kV ELECTROSTATIC DISCHARGE TEST ESD(KV) ESD DISPERSION MAP