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Maximum Ratings and Electrical Characteristics @ T A = 25/c176C unless otherwise specified /c183 /c183 /c183 Mechanical Data /c183Case: Molded Plastic /c183 1of3 High reliability K L M C H B A SOD-123 Dim Min Max A 0.55 Typ B 1.40 1.70 C 3.55 3.85 H 2.55 2.85 J 0.00 0.10 K 1.00 1.35 L 0.25 0.40 M 0.10 0.15 α 0 8° All Dimensions in mm Low I R Symbol Unit V RM V V R V Io A I FSM A Tj ℃ Tstg ℃Storage temperature -40 to +150 Forward current surge peak (60Hz・1cyc) 30 Junction temperature 150 Average rectified forward current 1 Parameter Limits Symbol Min. Typ. Max. Unit Forward voltage V F - 0.49 0.55 V I F =1.0A Reverse current I R - 7.0 50 µA V R =60V Ct - 40 - pF V R =10V , f=1MHz Parameter Capacitance terminals Conditions (*1)Mounted on epoxy board. 180°Half sine wave

FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(uA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS trr DISPERSION MAP RESERVE RECOVERY TIME:trr(ns) 0.001 0.01 0.1 0 100 200 300 400 500 600 Ta=-25℃ Ta=125℃ Ta=75℃ Ta=25℃ 0.01 0.1 100 1000 10000 0 1 02 03 04 05 06 0 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 100 1000 0 5 10 15 20 25 30 f=1MHz 480 490 500 510 520 530 AVE:495.1mV Ta=25℃ IF=1A n=30pcs 100 Ta=25℃ VR=20V n=30pcs AVE:6.966uA 100 AVE:37.9pF Ta=25℃ f=1MHz VR=10V n=10pcs 100 150 AVE:85.0A 8.3ms Ifsm 1cyc AVE:11.7ns Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 100 11 0 1 0 0 8.3ms Ifsm 1cyc 8.3ms 0.1 100 1000 0.001 0.01 0.1 1 10 100 1000 Rth(j-a) Rth(j-c) Mounted on epoxy board 1ms IM=10mA IF=0.5A 300us time 0.5 1.5 0 0.5 1 1.5 2 DC D=1/2 Sin(θ＝180) 100 150 200 1 10 100 t Ifsm

0.05 0.1 0.15 0.2 0 1 02 03 04 05 06 0 REVERSE POWER DISSIPATION:P R (W) REVERSE VOLTAGE:VR(V) VR-P R CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Sin(θ＝180) DC D=1/2 0.5 1.5 2.5 0 25 50 75 100 125 150 Sin(θ＝180) DC D=1/2 0.5 1.5 2.5 0 2 55 07 5 1 0 0 1 2 5 1 5 0 Sin(θ＝180) DC D=1/2 T Tj=150℃ D=t/Tt VR Io VR=30V C=200pF R=0Ω C=100pF R=1.5kΩ AVE:5.70kV No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) ESD DISPERSION MAP T Tj=150℃ D=t/Tt VR Io VR=30V