RB151 ZSELEC | Alldatasheet
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! Diffus ed Junction ! A! High Current Capability ! High Reliability ! High Surge Current Capability ! I d e a l f o r P r i n t e d C i r c u i t B o a r d s + ~ ~ - M echanic al Data ! C a s e : M o l d e d P l a s t i c E ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ~ ! Polarity: As Marked on Body ! Weight: 1.3 grams (approx.) - ! M o u n t i n g P o s i t i o n : A n y + ! M a r k i n g : T y p e N u m b e r G G ~ M aximum R atings and Electrical Characteristics @T A=25° C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol RB151 RB152 RB153 RB154 RB155 RB156 RB157 Unit P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRW M VR 50 100 200 400 600 800 1000 V RM S Reverse V oltage VR(RM S) 35 70 140 280 420 560 700 V A verage Rectified Output Current ( N o t e 1 ) @ TA = 50°C IO 1.5 A Non-Repet itive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFS M 50 A Forward Voltage (per element) @IF = 2.0A VFM 1.0 V Peak Reverse Current @TA = 25° C At Rated DC Blocking Voltage @TA = 100 °C IRM 2.0 500 µA Operat ing Temperature Range Tj -55 to +150 ° C S torage Temperature Range TST G -55 to +150 ° C Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case. WOM Dim Min Max A 9.10 B 5.00 5.50 C 30.5 D 25.4 — E 0.70 0. G 4.60 5.60 All Di mensions in mm RB151 – RB157 1.5A BRIDGE RECTI FIER Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com L o w F o r w a r d V o l t a g e D r o p Lead Free: For RoHS / Lead Free Version B C D
0.01 0.1 1.0 0.2 0.6 1.0 1.4 I , INST ANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig.2TypicalForwardCharacteristics, per element F T = 25°C Pulse width = 300µs j 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Surge Current Pulse Width 8.3 ms Single Half-Sine-Wave (JEDEC Method) 100 1 10 100 C , JUNCTION CAPACITANCE (pF)j V , REVERSE VOLT AGE (V) Fig. 4 Typical Junction Capacitance R T = 25°C f = 1mz j 0.01 0.1 1.0 100 200 0 40 80 160 I , INSTANTANEOUS REVERSE CURRENT (µA)R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics 120 T = 100°Cj T = 25°Cj 0.5 1.0 1.5 0 25 50 100 125 15075 I , A VERAGE FORWARD CURRENT (A)F T , AMBIENT TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve A 2.0 Single phase half-sine-wave 60Hz resistive or inductive load 2 of 2 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com RB151 – RB157 RB151 - RB157