RB095BM-30

RB095BM-30 KEXIN | Alldatasheet

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Technical content

www.kexin.com.cn 1 Dio des Schottky Diodes RB095BM-30 (KB095BM-30) ■ Features

• Power mold type
• Cathode common dual type
• High reliability
• Low VF 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max TO-252 Unit: mm ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Repetitive Peak Reverse Voltage VRM 35 Reverse Voltage VR 30 Average Forward Rectified Current IO 6 Non-repetitive Forward Current Surge Peak IFSM 50 Thermal Resistance Junction to Case Rth(J-C) 6 °C / W Junction Temperature TJ 150 Storage Temperature range Tstg -40 to 150 A V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 100 uA 30 Forward voltage VF IF= 3 A 0.425 Reverse voltage leakage current IR VR= 30 V 0.2 mA V Cathode (1) Anode (2) Anode (3)

www.kexin.com.cn2 Diod es Schottky Diodes RB095BM-30 (KB095BM-30) ■ Typical Characterisitics 0.01 0.1 100 1000 10000 100000 0 10 20 30 Tj = 25°C Tj = -25°C Tj = 150°C Tj = 75°C Tj = 125°C FORWARD CURRENT : IF(A) FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE CURRENT : IR( uA) REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS : Ct(pF) REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGE : VF(mV) VF DISPERSION MAP 0.01 0.1 0 100 200 300 400 500 600 Tj = 75°C Tj = 25°C Tj = 125°C Tj = -25°C Tj = 150°C 100 1000 10000 0 5 10 15 20 25 30 f = 1MHz 380 390 400 410 420 430 440 450 460 470 480 AVE : 393.5mV Tj=25°C IF=3A n=30pcs 1550 1600 1650 1700 1750 1800 AVE : 1617pF Tj=25°C f=1MHz VR=0V n=10pcs 100 Tj=25°C VR=30V n=30pcs AVE : 41.5uA REVERSE CURRENT : IR( uA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS : Ct(pF) Ct DISPERSION MAP

www.kexin.com.cn 3 Diod es Schottky Diodes RB095BM-30 (KB095BM-30) ■ Typical Characterisitics AVE : 19.3ns Tj=25°C IF=0.5A IR=1A Irr / IR=0.25 n=10pcs 100 150 200 250 300 350 400 AVE : 130A PEAK SURGE FORWARD CURRENT : IFSM(A) IFSM DISPERSION MAP REVERSE RECOVERY TIME : trr(ns) trr DISPERSION MAP 8.3msIFSM 1cyc. 100 1000 1 10 100 100 1000 1 10 100 0 10 20 30 D = 1/2 DC Sin(θ=180) 0 2 4 6 8 10 12 D = 1/2 DC Sin(θ=180) PEAK SURGE FORWARD CURRENT : IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT : IFSM(A) TIME : t(ms) IFSM-t CHARACTERISTICS FORWARD POWER DISPERSION : PF (W) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) IO-PF CHARACTERISTICS 1cyc. 8.3ms IFSM 8.3ms REVERSE POWER DISPERSION : PR (W) REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS IFSM time 1cyc.

www.kexin.com.cn4 Dio des Schottky Diodes RB095BM-30 (KB095BM-30) ■ Typical Characterisitics 0.1 100 0.001 0.01 0.1 1 10 100 1000 Rth(j-a) Rth(j-c) 0 25 50 75 100 125 150 D = 1/2 DC Sin(θ=180) No Break at 30kVNo Break at 30kV 0 25 50 75 100 125 150 D = 1/2 DC Sin(θ=180) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) AMBIENT TEMPERATURE : Ta(°C) DERATING CURVE (Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) CASE TEMPERATURE : Tc(°C) DERATING CURVE (Io-Tc) ELECTROSTATIC DISCHARGE TEST : ESD(kV) ESD DISPERSION MAP C=100pF R=1.5kΩ C=200pF R=0Ω T Tj=150°C D=t/T t VR Io VR=VRM/2 T Tj=150°C D=t/T t VR Io VR=VRM/2 TRANSIENT THERMAL IMPEDANCE : Rth (°C/W) TIME : t(s) Rth-t CHARACTERISTICS 1ms IM=100mA IF=1A 300us time Mounted on glass epoxy board