RB063L-30TE25 DIODES | Alldatasheet
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High frequency rectification For switching power supply zzzzFeatures 1) Compact power mold type. (PMDS) 2) Ultra low VF / Low IR. 3) VRM=30V guaranteed. zzzzConstruction Silicon epitaxial planar zzzzExternal dimensions (Units : mm) 0.1 CATHODE MARK 4.5±0.2 2.6±0.2 2.0±0.2 1.2±0.3 1.5±0.2 5.0±0.3 +0.02 −0.1 ROHM : PMDS EIAJ : − JEDEC : SOD-106 Date of manufacture EX. 1999.12 → 9, C zzzzAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Limits Unit VPeak reverse voltage VR 30 VDC reverse voltage IO 2AMean rectifying current ∗ IFSM 70 A Tj 125 °CJunction temperature Tstg −40∼+125 °CStorage temperature ∗ 180° half sine wave when mounted on glass epoxy PCBs. Peak forward surge current (60Hz·1 ) zzzzElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol Min. Typ. Max. Unit Conditions VF IR 0.395 200 V µA IF=2.0A VR =30V
zzzzElectrical characteristic curves (Ta=25°C) FORWARD CURRENT : I F (A) FORWARD VOLTAGE : VF (V) Fig.1 Forward characteristics 100m 10m Ta=125 Ta =75 Ta =25 REVERSE CURRENT : I R (A) REVERSE VOLTAGE : VR (V) Fig.2 Reverse characteristics 02 0 3 0 4 0101µ 10µ 100µ 100m 10m Ta=125°C Ta=75°C Ta=25°C TERMINAL CAPACITANCE : C T (pF) REVERSE VOLTAGE : VR (V) Fig.3 Capacitance between terminals characteristics 01 0 2 0 3 0100 1000 AVERAGE RECTIFIED FORWARD CURRENT : I O (A) AMBIENT TEMPERATURE : Ta (°C ) Fig.4 Derating curve (IO - Ta) (When mounted on alumina PCBs) 5.0 4.0 3.0 2.0 1.0 00 25 50 75 100 125 sine D =0.3 D =0.2 D =0.5 D =0.8 D =0.1 D =0.05 DC Tp T D =Tp / T VR =VRM / 2 IF IO AVERAGE RECTIFIED FORWARD CURRENT : I O (A) LEAD TEMPERATURE : T L (°C ) Fig.5 Derating curve (IO - TL) (When mounted on alumina PCBs) 5.0 4.0 3.0 2.0 1.0 00 25 50 75 100 125 D =0.8 D =0.5 sine D =0.3 D =0.2 D =0.1 D =0.05 DC Tp T D =Tp / T VR =VRM / 2 IO IF 0.4 0.2 0.6 0.8 1.0 1.2 1.4 FORWARD POWER DISSIPATION : P F (W) AVERAGE RECTIFIED FORWARD CURRENT : I O (A) D =0.05 D =0.1 D =0.2 D =0.3 D =0.5 D =0.8 DC Tp T D =Tp / T Tj=Tj Max. IF IO sine Fig.6 Forward power dissipation characteristics REVERSE POWER DISSIPATION : PR (W) REVERSE VOLTAGE : VR (V) Fig.7 Reverse power dissipation characteristics 00 2 4 6 8 1 01 21 41 61 82 0 0.05 0.10 0.15 0.20 0.30 0.25 D =0.8 sine VR VR Tp T Tj=Tj Max. Tj=Tj Max. D =Tp / T DCD =0.05 D =0.1 D =0.2 D =0.3 D =0.5 AVERAGE RECTIFIED FORWARD CURRENT : I O (A) AMBIENT TEMPERATURE : Ta (°C) Fig.8 Derating curve (IO - Ta) (when mounted on glass epoxy PCBs) 5.0 4.0 3.0 2.0 1.0 00 25 50 75 100 125 D =0.8 D =0.5 sine D =0.3 D =0.2 D =0.1 D =0.05 DC Tp T D =Tp / T VR =VRM / 2 IF IO