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@ T A = 25/c176C unless otherwise specified /c183 /c183 /c183 Mechanical Data /c183 K L M C H B A SOD-123 Dim Min Max A 0.55 Typ B 1.40 1.70 C 3.55 3.85 H 2.55 2.85 J 0.00 0.10 K 1.00 1.35 L 0.25 0.40 M 0.10 0.15 α 0 8° All Dimensions in mm Maximum Ratings and Electrical Characteristics Case: Molded Plastic High reliability Ultra Low V Small power mold type.（PMDU） F V RM V V R V I FSM A Tj Tstg Parameter Limits Reverse voltage (repetitive) 20 Reverse voltage (DC) 20 Average rectified forward current(*1) 3 Storage temperature -40 to +125 (*1)Mounting on alumina board. Tc=95C Max. Forward current surge peak （60Hz・1cyc） 30 Junction temperature 125 Symbol Min. Typ. Max. Unit Forward voltage V F - - 0.46 V I F =3A Reverse current I R - - 0.9 mA V R =20V Parameter Conditions RB051M-2Y 3.0A Surface Mount Schottky Barrier Diode 1of3
0.1 100 0.001 0.01 0.1 1 10 100 1000 Rth(j-a) Rth(j-c) 100 1 10 100 t Ifsm 100 1 10 100 8.3ms Ifsm 1cyc 8.3ms 100 150 200 AVE:48.0A 360 370 380 390 400 410 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 100 1000 0 5 10 15 20 0.1 100 1000 10000 100000 1000000 10000000 0 5 10 15 20 Ta=125C Ta=75C Ta=25C Ta=-25C Ta=150C 0.001 0.01 0.1 0 100 200 300 400 500 Ta=-25C Ta=125C Ta=75C Ta=25C Ta=150C FORWARD VOLTAGE:V F (mV) V F F CHARACTERISTICS FORWARD CURRENT:I F (A) REVERSE CURRENT:I R (uA) REVERSE VOLTAGE:V R (V) V R R CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:V R (V) V R -Ct CHARACTERISTICS V F DISPERSION MAP FORWARD VOLTAGE:V F (mV) REVERSE CURRENT:I R (uA) I R DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP I FSM DISPERSION MAP PEAK SURGE FORWARD CURRENT:I FSM (A) PEAK SURGE FORWARD CURRENT:I FSM (A) NUMBER OF CYCLES I FSM -CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:I FSM (A) TIME:t(ms) I FSM -t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (C/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS trr DISPERSION MAP RESERVE RECOVERY TIME:trr(ns) f=1MHz AVE:382.2mV Ta=25C I F =3A n=30pcs Ta=25C V R =30V n=30pcs AVE:270.0uA 400 410 420 430 440 450 460 470 480 490 500 AVE:454.2pF Ta=25C f=1MHz V R =0V n=10pcs AVE:9.8ns Ta=25℃ I F =0.5A I R =1A Irr=0.25*I R n=10pcs 0.5 1.5 012345 DC D=1/2 Sin(=180) 8.3ms Ifsm 1cyc 1ms IM=10mA I F =0.5A 300us time Mounted on alumina board 2of3
DISSIPATION:P R (W) REVERSE VOLTAGE:V R (V) V R R CHARACTERISTICS AMBIENT TEMPERATURE:Ta(C) Derating Curve"(Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPARATURE:Tc(C) Derating Curve"(Io-Tc) DC D=1/2 Sin(=180) DC D=1/2 Sin(=180) DC D=1/2 T Tj=150C D=t/Tt V R Io V R =1V A T Tj=150C D=t/Tt V R Io V R =1V A C=200pF R=0 C=100pF R=1.5k AVE:9.80kV No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) ESD DISPERSION MAP Sin(=180) 3of3