RABS05 ZSELEC | Alldatasheet
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! Lo w Forward Voltage Drop ! High Current Capability ! - H ! ~ D E ! Plastic Material – UL Flammability 94V-O A L Me c h a n i c a l D a t a J MIL-STD-202, Met hod 208 ! Polarity: As Marked on Case ! Mounting Position: Any ! Marking: Type Number Maximum R atings and Electrical Characteristics @TA=25° C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Note: 1. Mounted on glass epoxy PC board with 1.3mm 2 sol der pad. 2. Mounted on aluminum substrate PC board with 1.3mm2 sol der pad. ABS Dim Min Max A 4.80 5.30 B 4.20 4.60 C 0.15 0.25 D —0 . 2 0 E G 0.30 0.70 H 0.90 1.10 J K L Al l Dimensions in mm 6.00 6.80 1 of 2 ! Lea d Free: For RoHS / Lead Free Version Terminals: Plated Leads Solderable per K B G —1 . 5 0 1.22 1.72 35 70 140 280 420 560 700 V 50 100 200 400 600 800 1000 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Reverse Voltage VR(RM A verage Rectified Output Current (Note 1) @TA = 40° C Average Rectified Output Current (Note 2) @TA = 40° C IO A Non-Repet itive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A I 2t Rating f or Fusing (t < 8.3ms) I2t5 .0 A 2s Forward V oltage per element @I F = 0 .8A V FM 1.3 V P eak R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 125 °C IRM 5.0 500 µA Typic al Junction Capacitance per leg (Note 3) Cj 13 pF Typic al Thermal Resistance per leg (Note 1) R/G01JA R/G01JL 62.5 25 °C/ W Operating and St orage Temperature Range Tj, TSTG -55 to +150 ° C 3.80 4.20 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com UnitSy mbol RABS RABS RABS RABS RABS RABS Reverse Reco very Time (Note 4) trr 4. Meas 150 0.8 0.5 Alldatasheet
RABS05 – RABS10 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com I , PEAK FOR WARD SURGE CURRENT (A)FSM 1 10 100 NUMBER OFCYCLES AT 60 Hz Fig. 3 Peak Forward Surge Current Pulse Width 8.3ms Single Half-Sine-W ave (JEDEC Method) 100 1 10 100 C , CAPACIT ANCE (pF)j V , REVERSEVOL TAGE (V) Fig. 4 Typical Junction Capacitance R T = 25°C f = 1MHz j 0.2 0.4 0.6 0.8 1.0 25 50 75 100 125 150 175 200 I , A VERAGE FWD RECTIFIED CURRENT (A)(AV) T , AMBIENT TEMPERATURE (°C) Fig. 1 Forward Derating Curve A Single phase half-wave 60 Hz resistive or inductive load 50V DC Approx
50 NI (Non-inductive)W 10
1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Settimebasefor5/10ns/cm +0.5A -0.25A -1.0ANotes: 1. RiseT ime = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W
5 Reverse Recovery
Time Characteristic and Test Circuit (+) (+) (-) (-) 0.01 0.1 1.0 0.6 0.8 1.0 1.2 1.4 I , INST ANTANEOUS FWD CURRENT (A)F V , INST ANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T =25°Cj Pulse width= 300 µs Alldatasheet