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www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10V Drive Nch MOSFET R8002ANX Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. Application Switching Packaging specifications Inner circuit Package Bulk Code - Basic ordering unit (pieces) 500 R8002ANX Absolute maximum ratings (Ta = 25C) Symbol Limits Unit Drain-source voltage V DSS 800 V Gate-source voltage V GSS 30 V Continuous I D 2A Pulsed I DP 8A Continuous I S 2A Pulsed I SP 8A Avalanche current IAS 1A Avalanche energy EAS 0.265 mJ Power dissipation P D 35 W Channel temperature T ch 150 C Range of storage temperature T stg 55 to 150 C *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, Tch=25°C *3 Limited only by maximum channel temperature allowed. *4 TC=25°C Thermal resistance Symbol Limits Unit Channel to Case R th (ch-c) 3.57 C / W Parameter Type Source current (Body Diode) Drain current Parameter TO-220FM 4.5 2.8 0.75 φ3.2 (2)( 3) (1) 0.8 2.54 2.62.54 1.3 1.2 14.0 12.0 8.0 2.5 10.0 15.0 (1) Gate (2) Drain (3) Source 1 BODY DIODE (1) (3)(2) (1) Gate (2) Drain (3) Source 1/6 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet R8002ANX Electrical characteristics (Ta = 25C) Symbol Min. Typ. Max. Unit Gate-source leakage I GSS -- 100 nA V GS=30V, VDS=0V Drain-source breakdown voltage V (BR)DSS 800 - - V I D=1mA, VGS=0V Zero gate voltage drain current I DSS - - 100 AV DS=800V, VGS=0V Gate threshold voltage V GS (th) 3.0 - 5.0 V V DS=10V, ID=1mA Forward transfer admittance l Y fs l 0.5 - - S V DS=10V, ID=1.0A Input capacitance C iss - 210 - pF V DS=25V Output capacitance C oss - 130 - pF V GS=0V Reverse transfer capacitance C rss - 14 - pF f=1MHz Turn-on delay time t d(on) - 17 - ns V DD 400V, ID=1.0A Rise time t r - 20 - ns V GS=10V Turn-off delay time t d(off) - 33 - ns R L=400 Fall time t f - 70 - ns R G=10 Total gate charge Q g - 12.7 - nC V DD 400V Gate-source charge Q gs - 2.7 - nC I D=2.0A Gate-drain charge Q gd - 4.3 - nC V GS=10V *Pulsed Body diode characteristics (Source-Drain) Symbol Min. Typ. Max. Unit Forward Voltage V SD - - 1.5 V I S=2.0A, VGS=0V *Pulsed 4.3 Parameter Conditions Conditions Parameter Static drain-source on-state resistance RDS (on) ID=1.0A, VGS=10V- 3.3 2/6 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet R8002ANX Electrical characteristic curves (Ta=25C) 0.1 0.2 0.3 0.4 0.5 0 0.2 0.4 0.6 0.8 1 Drain Current : ID [A] Drain-Source Voltage : VDS [V] Fig.1 Typical Output Characteristics (Ⅰ) VGS=5.5V VGS=10.0V VGS=7.0V VGS=8.0V VGS=6.0V VGS=6.5V VGS=5.0V Ta=25°C pulsed 0.5 1.5 0 1 2 3 4 5 6 7 8 9 10 Drain Current : ID [A] Drain-Source Voltage : VDS [V] Fig.2 Typical Output Characteristics (Ⅱ) VGS=6.0V VGS=10.0V VGS=8.0V VGS=6.5V VGS=7.0V VGS=5.5V VGS=5.5V Ta=25°C pulsed 0.001 0.01 0.1 Drain Currnt : ID [A] Gate-Source Voltage : VGS [V] Fig.3 Typical Transfer Characteristics VDS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C -50 0 50 100 150 Gate Threshold Voltage : VGS(th) [V] Channel Temperature : Tch [℃] Fig.4 Gate Threshold Voltage vs. Channel Temperature VDS=10V ID=1mA pulsed -50 0 50 100 150 Static Drain-Source On-State Resistance : RDS(on) [Ω] Channel Temperature : Tch [℃] Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature VDS=10V pulsed ID=1A ID=2A 0.1 100 0.01 0.1 1 10 Static Drain-Source On-State Resistance RDS(on) [Ω] Drain Current : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current VGS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 3/6 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet R8002ANX 0 5 10 15 20 25 30 Static Drain-Source On-State Resistance RDS(on) [Ω] Gate-Source Voltage : VGS [V] Fig.7 Static Drain-Source On-State Resistance vs. Gate-Source Voltage ID=2.0A ID=1.0A Ta=25°C pulsed 0.001 0.01 0.1 0.001 0.01 0.1 1 10 Forward Transfer Admittance Yfs [S] Drain Current : ID [A] Fig.8 Forward Transfer Admittance vs. Drain Current VDS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.1 0.0 0.5 1.0 1.5 Source Current : Is [A] Source-Drain Voltage : VSD [V] Fig.9 Source Current vs. Source-Drain Voltage VGS=0V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 1000 10000 0.01 0.1 1 10 100 1000 Capacitance : C [pF] Drain-Source Voltage : VDS [V] Fig.10 Typical Capacitance vs. Drain-Source Voltage Ta=25°C f=1MHz VGS=0V Ciss Coss Crss 100 1000 10000 0.01 0.1 1 10 Switching Time : t [ns] Drain Current : ID [A] Fig.11 Switching Characteristics td(on) tr td(off) tf VDD≒400V VGS=10V RG=10Ω Ta=25°C Pulsed 0 5 10 15 20 Gate-Source Voltage : VGS [V] Total Gate Charge : Qg [nC] Fig.12 Dynamic Input Characteristics Ta=25°C VDD=400V ID=2A Pulsed 4/6 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet R8002ANX 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Normalized Transient Thermal Resistance : r（t） Pulse width : Pw (s) Fig.13 Normalized Transient Thermal Resistance v.s. Pulse Width Ta=25°C Single Pulse Rth(ch-a)=64.2°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 100 1000 0 1 10 Reverse Recovery Time : trr [ns] Source Current : IS [A] Fig.15 Reverse Recovery Time vs. Source Current Ta=25°C Vgs=0V di/dt=100A/ms Pulsed 0.001 0.01 0.1 100 0.1 1 10 100 1000 Drain Current : ID [ A ] Drain-Source Voltage : VDS [ V ] Fig.14 Maximum Safe Operating Area Ta=25°C Single Pulse Operation in this area is limited by RDS(on) (VGS = 10V) PW = 100μs PW = 1ms PW = 10ms 5/6 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet R8002ANX Measurement circuits Fig.1-1 Switching Time Measurement Circuit VGS RG VDS D.U.T. ID RL VDD Fig.1-2 Switching Waveforms 90% 90% 90 % 10% 10% 50% 10% 50% VGS Pulse width VDS ton toff trtd(on) tftd(off) Fig.2-1 Gate Charge Measurement Circuit VGS IG(Const.) VDS D.U.T. ID RL VDD Fig.2-2 Gate Charge Waveform VG VGS Charge Qg Qgs Qgd Fig.3-1 Avalanche Measurement Circuit VGS RG VDS D.U.T. IAS L VDD Fig.3-2 Avalanche Waveform IAS VDD V(BR)DSS IAS LEAS = V(BR)DSS - VDD V(BR)DSS1 6/6 2011.10 - Rev.A
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