R8002ANJ

R8002ANJ ROHM | Alldatasheet

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www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. R8002ANJ Nch 800V 2A Power MOSFET Reverse diode dv/dt dv/dt *5 15 V/ns Junction temperature Tj 150 °C Range of storage temperature Tstg -55 to +150 °C Avalanche current IAS *3 1.0 A Power dissipation (Tc = 25°C) PD 40 W Avalanche energy, single pulse EAS *3 0.265 mJ Avalanche energy, repetitive EAR *4 0.212 mJ Pulsed drain current ID,pulse *2 8.0 A Gate - Source voltage VGSS 30 V Continuous drain current Tc = 25°C ID *1 2.0 A Tc = 100°C ID *1 1.1 A Drain - Source voltage VDSS 800 V Taping code TL Marking R8002ANJ lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Type Packaging Taping Reel size (mm) 330 lApplication Tape width (mm) 24 Switching Power Supply Basic ordering unit (pcs) 1,000 lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 5) Parallel use is easy. lOutline VDSS 800V LPT(S) (SC-83)RDS(on) (Max.) 4.3W ID 2A PD 40W (1) Gate (2) Drain (3) Source *1 BODY DIODE (2) (1) (3) 1/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8002ANJ Drain - Source avalanche breakdown voltage V(BR)DSS VGS = 0V, ID = 1.0A - 900 - V WGate input resistance RG f = 1MHz, open drain - 6.1 - 3.3 4.3 Tj = 125°C - 7.2 - V Static drain - source on - state resistance RDS(on) VGS = 10V, ID = 1.0A WTj = 25°C - Gate threshold voltage VGS (th) VDS = 10V, ID = 1mA 3 - 5 Gate - Source leakage current IGSS VGS = 30V, VDS = 0V - - 100 nA mATj = 25°C - 0.1 100 Tj = 125°C - - 1000 Zero gate voltage drain current IDSS VDS = 800V, VGS = 0V VDrain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 800 - - lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Soldering temperature, wavesoldering for 10s Tsold - - 265 °C Thermal resistance, junction - ambient *6 RthJA - - 80 °C/W Thermal resistance, junction - case RthJC - - 3.13 °C/W lThermal resistance Parameter Symbol Values Unit Min. Typ. Max. Drain - Source voltage slope dv/dt VDS = 640V, ID = 2.0A

50 V/ns

Tj = 125°C lAbsolute maximum ratings Parameter Symbol Conditions Values Unit 2/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8002ANJ *1 Limited only by maximum temperature allowed. *2 PW  10ms, Duty cycle  1% *3 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C *4 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C, f = 10kHz *5 Reference measurement circuits Fig.5-1. *6 Mounted on a epoxy PCB FR4 (25mm × 27mm × 0.8mm) *7 Pulsed Gate plateau voltage V(plateau) VDD ⋍ 400V, ID = 2.0A - 7.0 - nCGate - Source charge Qgs *7 ID = 2.0A - 3 - Gate - Drain charge Qgd *7 VGS = 10V Total gate charge Qg *7 VDD ⋍ 400V Unit Min. Typ. Max. V - 7 - - 12 - lGate Charge characteristics (Ta = 25°C) Parameter Symbol Conditions Values ns Rise time tr Turn - off delay time td(off) *7 RL = 402W Turn - on delay time td(on) *7 VDD ⋍ 400V, VGS = 10V - 20 - - 35 - Fall time tf *7 RG = 10W - 75 15 - pF Effective output capacitance, time related Co(tr) - 23.6 - Effective output capacitance, energy related Co(er) VGS = 0V VDS = 0V to 640V - 10.2 - S Input capacitance Ciss VGS = 0V - 250 - pFOutput capacitance Coss Transconductance gfs *7 VDS = 10V, ID = 1.0A 0.5 1.0 - VDS = 25V - 130 - Reverse transfer capacitance Crss f = 1MHz - lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. 3/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8002ANJ - A/msPwak rate of fall of reverse recovery current dirr/dt Tj= 25°C - 700 Ws/KRth2 0.751 Cth2 0.00267 Rth3 0.644 Cth3 0.151 Rth1 0.185 K/W Cth1 0.000966 lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit - 2.5 - mC Peak reverse recovery current Irrm *6 - 10.5 - A V Reverse recovery time trr IS = 2.0A di/dt = 100A/ms - 480 - ns Reverse recovery charge Qrr Forward voltage VSD A Inverse diode direct current, pulsed ISM *2 - - 8.0 A Inverse diode continuous, forward current IS *1 Tc = 25°C - - 2.0 lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. 4/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8002ANJ lElectrical characteristic curves 100 120 0 50 100 150 200 0.0001 0.001 0.01 0.1 100 1000 0.00010.001 0.01 0.1 1 10 100 1000 Ta = 25ºC Single Pulse Rth(ch-a)(t) = ｒ(t)×Rth(ch-a) Rth(ch-a) = 80ºC/W top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single Fig.1 Power Dissipation Derating Curve Power Dissipation : PD/PD max. [%] Junction Temperature : Tj [°C] Fig.2 Normalized Transient Thermal Resistance vs. Pulse Width Normalized Transient Thermal Resistance : r(t) Pulse Width : PW [s] 5/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8002ANJ lElectrical characteristic curves 0.5 1.5 0.01 0.1 1 10 100 Ta = 25ºC VDD = 50V, RG = 25W VGF = 10V, VGR = 0V 100 150 200 250 300 350 400 450 500 Ta=25ºC 100 120 0 25 50 75 100 125 150 175 Fig.3 Avalanche Current vs Inductive Load Avalanche Current : IAR [A] Coil Inductance : L [mH] Fig.4 Avalanche Power Losses Avalanche Power Losses : PAR [W] Frequency : f [Hz] Fig.5 Avalanche Energy Derating Curve vs Junction Temperature Avalanche Energy : EAS / EAS max. [%] Junction Temperature : Tj [ºC] 6/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8002ANJ lElectrical characteristic curves 0.2 0.4 0.6 0.8 0 2 4 6 8 10 Ta=150ºC Pulsed VGS= 10.0V VGS= 4.5V VGS= 8.0V VGS= 7.0V VGS= 6.5V VGS= 6.0V VGS= 5.0V VGS= 5.5V 0.5 1.5 0 10 20 30 40 50 Ta=150ºC Pulsed VGS= 10.0V VGS= 4.5V VGS= 8.0V VGS= 7.0V VGS= 6.5V VGS= 6.0V VGS= 5.5V VGS= 5.0V 0.2 0.4 0.6 0.8 0 1 2 3 4 5 VGS= 5.0V VGS= 10.0V VGS= 6.0V VGS= 5.5V VGS= 6.5V VGS= 8.0V VGS= 7.0V Ta=25ºC Pulsed 0.5 1.5 0 10 20 30 40 50 Ta=25ºC Pulsed VGS= 5.0V VGS= 10.0V VGS= 6.0V VGS= 5.5V VGS= 6.5V VGS= 8.0V VGS= 7.0V Fig.6 Typical Output Characteristics(I) Drain Current : ID [A] Drain - Source Voltage : VDS [V] Fig.7 Typical Output Characteristics(II) Drain Current : ID [A] Drain - Source Voltage : VDS [V] Fig.8 Tj = 150°C Typical Output Characteristics(I) Fig.9 Tj = 150°C Typical Output Characteristics(II) Drain Current : ID [A] Drain - Source Voltage : VDS [V] Drain Current : ID [A] Drain - Source Voltage : VDS [V] 7/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8002ANJ lElectrical characteristic curves 700 750 800 850 900 950 1000 -50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 0 2 4 6 8 10 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC VDS= 10V 3.0 3.5 4.0 4.5 5.0 -50 -25 0 25 50 75 100 125 150 VDS= 10V ID= 1mA 0.01 0.1 0.01 0.1 1 10 Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC VDS= 10V Fig.11 Typical Transfer Characteristics Fig.10 Breakdown Voltage vs. Junction Temperature Drain - Source Breakdown Voltage : V(BR)DSS [V] Drain Current : ID [A] Fig.12 Gate Threshold Voltage vs. Junction Temperature Gate Threshold Voltage : VGS(th) [V] Junction Temperature : Tj [°C] Fig.13 Transconductance vs. Drain Current Transconductance : gfs [S] Drain Current : ID [A] Junction Temperature : Tj [°C] Gate - Source Voltage : VGS [V] 8/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8002ANJ lElectrical characteristic curves 0 5 10 15 20 ID = 2.0A ID = 1.0A Ta=25ºC 0.1 100 0.01 0.1 1 10 Ta=25ºC VGS= 10V -50 -25 0 25 50 75 100 125 150 VGS= 10V ID = 2.0A 0.1 100 0.01 0.1 1 10 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC VGS= 10V Fig.14 Static Drain - Source On - State Resistance vs. Gate Source Voltage Static Drain - Source On-State Resistance : RDS(on) [W] Gate - Source Voltage : VGS [V] Fig.15 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [W] Junction Temperature : Tj [ºC] Fig.16 Static Drain - Source On - State Resistance vs. Drain Current Static Drain - Source On-State Resistance : RDS(on) [W] Drain Current : ID [A] Static Drain - Source On-State Resistance : RDS(on) [W] Drain Current : ID [A] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current 9/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8002ANJ lElectrical characteristic curves 100 1000 10000 0.01 0.1 1 10 100 1000 Coss Crss Ciss Ta=25ºC f = 1MHz VGS = 0V 100 1000 10000 0.01 0.1 1 10 tf td(on) td(off) Ta = 25ºC VDD = 400V VGS = 10V RG= 10W tr 0 5 10 15 20 25 Ta = 25ºC VDD= 400V ID= 2A Fig.18 Typical Capacitance vs. Drain - Source Voltage Capacitance : C [pF] Drain - Source Voltage : VDS [V] Fig.20 Switching Characteristics Switching Time : t [ns] Drain Current : ID [A] Fig.21 Dynamic Input Characteristics Total Gate Charge : Qg [nC] Gate - Source Voltage : VGS [V] Coss Stored Energy : EOSS [uJ] Fig.19 Coss Stored Energy Drain - Source Voltage : VDS [V] 0 200 400 600 800 Ta=25ºC 10/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8002ANJ lElectrical characteristic curves 100 1000 10000 0.1 1 10 Ta=25ºC di / dt = 100A / ms VGS = 0V 0.01 0.1 0.0 0.5 1.0 1.5 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC VGS=0V Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Inverse Diode Forward Current : IS [A] Source - Drain Voltage : VSD [V] Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] 11/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8002ANJ lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform 12/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8002ANJ lDimensions (Unit : mm) Dimension in mm / inches LPTS e b L2E c H Lp L l2 l1 x B A B e b5 D A Pattern of terminal position areas [Not a recommended pattern of soldering pads] MIN MAX MIN MAXA1 0.00 0.30 0.000 0.012 A2 4.30 4.70 0.169 0.185 b 0.68 0.98 0.027 0.039 b3 1.14 1.44 0.045 0.057 c 0.30 0.60 0.012 0.024 c1 1.10 1.50 0.043 0.059 D 9.80 10.40 0.386 0.409 E 8.80 9.20 0.346 0.362 e HE 12.80 13.40 0.504 0.528 L 2.70 3.30 0.106 0.130 L1 0.90 1.50 0.035 0.059 Lp 0.90 1.50 0.035 0.059 x - 0.25 - 0.010 MIN MAX MIN MAXb5 - 1.23 - 0.049 b6 - 10.40 - 0.409 l1 - 2.10 - 0.083 l2 - 7.55 - 0.297 l3 - 13.40 - 0.528 7.25 0.285 1.00 0.039 DIM MILIMETERS INCHES 8.90 0.350 2.54 0.100 1.10 0.043 DIM MILIMETERS INCHES 0.25 0.010 13/13 2013.10 - Rev.A

R1102Awww.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://www.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative and verify the latest specifica- tions : Although ROHM is continuously working to improve product reliability and quality, semicon- ductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi- cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. The Products specified in this document are not designed to be radiation tolerant. For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 10) 11) 12) 13) 14)