R5000F ZSELEC | Alldatasheet
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atings and Electrical Characteristics @T A=25° C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. R5000F Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com ures ! Dif f used Junction ! Low Forward Voltage Drop ! H i g h C u r r e n t C a p a b i l i t y A B A ! High Reliability ! High Surge Current Capability M e c h a n i c a l D a t a C ! Cas e: Molded Plastic D ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.40 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ! Lea d Free: For RoHS / Lead Free Version DO-15 Di m M in Max A 24. 5 — B 5. 50 7. 62 C 0.60 0.80 D 2.60 3.60 A ll Dimensions in mm Characteri stic Symbol Unit P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRW M VR RM S Reverse Voltage VR(RM A verage Rectified Output Current ( N o t e 1 ) @ TA = 55°C IO mA Non-Repet itive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFS M A Forward V oltage @IF = Io FM 3.0 V Peak Reverse Current @TA = 25° C At Rated DC Blocking Voltage @TA = 100° C IRM 5.0 50 µA T ypical Junction Capacitance (Note 2) C j 7.0 pF T ypical Thermal Resistance Junction to Ambient (Note 1) R /G01JA 117 K Operat ing Temperature Range Tj -55 to +150 ° C S torage Temperature Range TST G -55 to +150 ° C R5000F 5000 3500 V V 200 V Revers e Rec overy Time (Note 2) trr 400 nS Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 0.1 0.2 0.3 0.4 I , AVERAGE RECTIFIED CURRENT (A)(AV) T , AMBIENT TEMPERATURE (ºC)A Fig. 1 Forward Current Derating Curve 0.6 0.5 50 100 150 200 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FWD VOLTAGE (V) Fig.2 T ypical Forward Characteristics F 0.001 0.01 0.1 1.0 0.6 1.0 1.4 10 100 I , PEAK FWD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Peak Fwd Surge Current vs # of Cycles @ 60 Hz 8.3ms Single Half Sine-Wave JEDEC Method 1.0 100 C , JUNCTION CAPACITANCE (pF) j V , REVERSE VOLTAGE (V) Fig.4 T ypical Junction Capacitance R 50V DC Approx 50 NI (Non-inductive)W 10 NIW 1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Settimebasefor5 /10ns/cm +0.5A -0.25A -1.0ANotes: 1.Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5Reverse Recovery Time Characteristic and Test Circuit (+) (+) (-) (-)