R5000 ZSELEC | Alldatasheet
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M aximum Ratings and Electrical Characteristics A =25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RW M V R RMS Reverse Voltage V R(RMS) Average Rectified Output Current ( N o t e 1 ) @ T A = 55°C I O mA Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FS M A 4.0 V Peak Reverse Current @T A = 25°C At Rated DC Blocking Voltage @T A = 100°C I RM 5.0 50 µA Typical Junction Capacitance (Note 2) C j 7.0 pF Typical Thermal Resistance Junction to Ambient (Note 1) R /G01JA
117 K/W
Operating Temperature Range T j -55 to +150 °C Storage Temperature Range T ST G -55 to +150 °C Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case R5000 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com R5000 5000 3500 V V 200 ures ! Dif fused Junction ! Low Forward Voltage Drop ! H i g h C u r r e n t C a p a b i l i t y A B A ! High Reliability ! High Surge Current Capability M e c h a n i c a l D a t a C ! Case: Molded Plastic D ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.40 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version DO-15 Dim Min Max A 24.5 — B 5.50 7.62 C 0.60 0.80 D 2.60 3.60 All Dimensions in mm Forward Voltage @I F = Io FM V
Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 0.1 0.2 0.3 0.4 I , AVERAGE RECTIFIED CURRENT (A) (AV) T , AMBIENT TEMPERATURE (ºC)A Fig. 1 Forward Current Derating Curve 0.6 0.5 50 100 150 200 I,INST ANT ANEOUS FOR W ARD CURRENT (A) F V , INSTANTANEOUS FWD VOLTAGE (V) Fig.2 T ypical Forward Characteristics F 0.001 0.01 0.1 1 10 100 I ,PEAK FWD SURGE CURRENT (A) FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Peak Fwd Sur ge Current vs # of Cycles @ 60 Hz 8.3ms Single Half Sine-Wave JEDEC Method 1.0 100 1.0 10 100 1000 C ,JUNCTION CAP ACIT ANCE (pF) j V , REVERSE VOLTAGE (V) Fig.4 T ypical Junction Capacitance R