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PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC PRODUCT INFORMATION DECEMBER 1995 - REVISED SEPTEMBER 1997Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. OVERVOLTAGE PROTECTION FOR ERICSSON COMPONENTS LINE INTERFACE CIRCUIT S
- PBA 3357/3 DCLIC Overvoltage Protector
- Dual Voltage-Programmable Protector - Wide 0 to -70 V Programming Range - Low Voltage Overshoot Crowbar and Diode - Low 5 mA max. Triggering Current - Does not Charge Gate Supply - Specified for 0°C to 70°C Operation - Plastic Dual-in-line Package
- Rated for International Surge Wave Shapes descriptio n The R3612 is a dual forward-conducting buffered p-gate over voltage protector in a plastic DIP package. It is designed to protect the Ericsson Components PBA 3357/3 DCLIC (Dual Channel Complete Line Interface Circuit) against over voltages on the telephone line caused by lightning, a.c. power contact and induction. The R3612 limits voltages that exceed the DCLIC supply rail voltage. The DCLIC line driver section is powered from
0 V (ground) and a negative voltage in the region
of -44 V to -56 V. The protector gate is connected to this negative supply. This references the protection (clipping) voltage to the negative supply voltage. As the protection voltage will track the negative supply voltage the over voltage stress on the DCLIC is minimised. Positive over voltages are clipped to ground by a low voltage overshoot diode. Negative over voltages are initially clipped close to the DCLIC negative supply rail value. If sufficient current is available from the over voltage, then the protector will crowbar into a low voltage on-state condition. As the over voltage subsides the high holding current of the crowbar prevents d.c. latchup. The buffered gate design reduces the loading on the DCLIC supply during over voltages caused WAVE SHAP E STANDAR D ITS P A 2/10 µs TR-NWT-00108 9 80 0.5/700 µs RLM8 8 38 10/700 µs K17, K20, K21 38 10/1000 µs TR-NWT-00108 9 30 by power cross and induction. The gate characteristic is designed to produce a net current drain on the interface circuit voltage supply during low level power cross or induction. This removes the need for a separate clamping diode across the voltage supply. These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system operation they are virtually transparent. Characteristic values for the R3612 are measured either at the extremes of the DCLIC recommended operating voltage range (-44 V to -56 V) or at the DCLIC maximum rated supply voltage (-70 V). device symbo l Terminals K1, K2 and A correspond to the alternative line designators of T, R and G or A, B and C. The negative protection voltage is controlled by the voltage, V GG, applied to the G terminal. SD6XAEA K1 G K2 MD6XAV P PACKAGE (TOP VIEW) NC - No internal connection Terminal typical application names shown in parenthesis 4 5 G NC A A (Tip) (Ground) (Ground) (Ring) (Gate) (Tip) (Ring)
PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC DECEMBER 1995 - REVISED SEPTEMBER 199 7 PRODUCT INFORMATION absolute maximum rating s NOTES: 1. Initially the protector must be in thermal equilibrium with 0°C ≤ TJ ≤ 70°C. The surge may be repeated after the device returns to its initial conditions. 2. Above 70°C, derate linearly to zero at 150°C lead temperature. RATIN G SYMBO L VALU E UNIT Non-repetitive peak off-state voltage, IG = 0, 0°C ≤ TJ ≤ 70°C VDS M -90 V Repetitive peak off-state voltage, IG = 0, 0°C ≤ TJ ≤ 70°C VDR M -80 V Repetitive peak gate-cathode voltage, V KA = 0, 0°C ≤ TJ ≤ 70°C VGKR M -80 V Non-repetitive peak on-state pulse current(see Notes 1 and 2) ITS P A 10/1000 µs(Bellcore TR-NWT-001089, Section 4 and Appendix A) 30 0.2/310 µs(RLM88, open-circuit voltage wave shape 1.5 kV 0.5/700 µs) 5/310 µs(CCITT K17, K20 & K21, open-circuit voltage wave shape 1.5 kV 10/700 µs)) 2/10 µs(Bellcore TR-NWT-001089, Section 4 and Appendix A) 80 Non-repetitive peak on-state current, 50 Hz (see Notes 1 and 2) ITS M A 200 m s 5.6 1 s 25 s 900 s 3.5 0.7 0.42 Non-repetitive peak gate current, 1/2 µs,(see Notes 1 and 2) IGS M 25 A Junction temperature TJ -55 to +150 °C Storage temperature range Tstg -55 to +150 °C recommended operating conditions MIN TY P MA X UNIT C G Gate decoupling capacitor 220 nF electrical characteristics, Tam b = 25°C (unless otherwise noted) PARAMETE R TEST CONDITION S MIN TY P MA X UNIT ID Off-state current VD = VDR M , VG K = 0 TJ = 0°C 5 µA TJ = 70°C 50 µA V(BO ) Breakover voltage IT = 20 A, I3124 generator, open-circuit voltage wave shape 1 5 kV 0.5/700 µs, board resistance R S = 35 Ω, C G = 220 nF, VG G = -56 V (See Note 3 and Figure 1.) -80 V t(BR) Breakdown time IT = 20 A, I3124 generator, open-circuit voltage wave shape 1 5 kV 0.5/700 µs, board resist- ance R S = 35 Ω, C G = 220 nF, VG G = -56 V (See Note 3 and Figure 1.) V(BR) < -70 V V(BR) < -58.5 V 10000 µs VF Forward voltage IF = 5 A, tw = 500 µs 3 V VFR M Peak forward recovery voltage IF = 20 A,I3124 generator, open-circuit voltage wave shape 1 5 kV 0.5/700 µs, board resistance R S = 35 Ω, C G = 220 nF, VG G = -56 V (See Note 4 and Figure 1.) 15 V tFR M Forward recovery time IT = 20 A, I3124 generator, open-circuit voltage wave shape 1 5 kV 0.5/700 µs, board resist- ance R S = 35 Ω, C G = 220 nF, VG G = -56 V (See Note 4 and Figure 1.) VF > 10 V VF > 5 V VF > 1 V 0.25 10000 µs IH Holding current IT = 1 A, di/dt = -1A/ms, VG G = -70 V, 0°C ≤ TJ ≤ 70°C 105 m A IGA S Gate reverse current VG G = -70 V, VAK = 0 TJ = 0°C -5 µATJ = 70°C -50 IGA T Gate reverse current, on state IT = 0.5 A, tw = 500 µs, VG G = -70 V -1 m A
NOTES: 3.PBA 3357/3 maximum negative voltage pulse rating is -120 V for 0.25 µs, -90 V for 1 µs, -70 V for 10 ms and -70 V for d.c. Compliance to these conditions is guaranteed by the maximum breakover voltage and the breakdown times of the R3612.
- These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge. Figure 1. TRANSIENT LIMITS FOR R3612 LIMITING VOLTAG E
DECEMBER 1995 - REVISED SEPTEMBER 1997 R3612 PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC PRODUCT INFORMATION DEVICE PARAMETER S genera l Thyristor based over voltage protectors, for telecommunications equipment, became popular in the late 1970s. These were fixed voltage breakover triggered devices, likened to solid state gas discharge tubes. As these were new forms of thyristor, the existing thyristor terminology did not cover their special characteristics. This resulted in the invention of new terms based on the application usage and device characteristic. Initially, there was a wide diversity of terms to describe the same thing, but today the number of terms have reduced and stabilised. Information on fixed voltage over voltage protector terms, symbols and their definitions is given in the publication SLPDE05, “Over-voltage Protection For Telecommunication Systems - Data Manual and Application Information”, pp 1-4 to 1-6, Texas Instruments Limited, Bedford, 1994. Programmable, (gated), over voltage protectors are relatively new and require additional parameters to specify their operation. Similarly to the fixed voltage protectors, the introduction of these devices has resulted in a wide diversity of terms to describe the same thing. This section has a list of alternative terms and the parameter definitions used for this data sheet. In general, the Texas Instruments approach is to use terms related to the device internal structure, rather than its application usage as a single device may have many applications each using a different terminology for circuit connection. terms, definitions and symbol s Thyristor over voltage protectors have substantially different characteristics and usage to the type of thyristor covered by IEC 747-6. These differences necessitate the modification of some characteristic descriptions and the introduction of new terms. Where possible terms are used from the following standards. IEC 747-1:1983, Semiconductor devices - Discrete devices and integrated circuits - Part 1: General IEC 747-2:1983, Semiconductor devices - Discrete devices and integrated circuits - Part 2: Rectifier Diodes IEC 747-6:1983, Semiconductor devices - Discrete devices and integrated circuits - Part 6: Thyristors main terminal rating s Repetitive Peak Off-State Voltage, VDRM Rated maximum (peak) instantaneous voltage that may be applied in the off-state conditions including all d.c. and repetitive voltage components. Repetitive Peak On-State Current, ITR M Rated maximum (peak) value of a.c. power frequency on-state current of specified waveshape and frequency which may be applied continuously. Non-Repetitive Peak On-State Current, ITS M Rated maximum (peak) value of a.c. power frequency on-state surge current of specified waveshape and frequency which may be applied for a specified time or number of a.c. cycles. Non-Repetitive Peak Pulse Current, ITS P Rated maximum value of peak impulse pulse current of specified amplitude and waveshape that may be applied. Non-Repetitive Peak Forward Current, IFS M Rated maximum (peak) value of a.c. power frequency forward surge current of specified waveshape and frequency which may be applied for a specified time or number of a.c. cycles.
PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC DECEMBER 1995 - REVISED SEPTEMBER 199 7 PRODUCT INFORMATION Repetitive Peak Forward Current, IFR M Rated maximum (peak) value of a.c. power frequency forward current of specified waveshape and frequency which may be applied continuously. Critical rate of rise of on-state current, di/dt, (diT/dt)cr Rated value of the rate of rise of current which the device can withstand without damage. main terminal characteristic s Off-State Voltage, VD The d.c. voltage when the device is in the off-state. Off-State Current, ID The d.c. value of current that results from the application of the off-state voltage, VD. Repetitive Peak Off-State Current, IDR M The maximum (peak) value of off-state current that results from the application of the repetitive peak off-state voltage, VDR M . Breakover Voltage, V(BO ) The maximum voltage across the device in or at the breakdown region measured under specified voltage rate of rise and current rate of rise. NOTE - Where a breakdown characteristic has several V(BO) values that need to be referenced, a numeric suffix can be added and the relevant part of the breakdown current range specified (e.g. V(BO)1, 0 < I(BR)< 10 mA) . Holding Current, IH The minimum current required to maintain the device in the on-state. Off-State Capacitance, C O , C J The capacitance in the off-state measured at specified frequency, f, amplitude, Vd, and d.c. bias, VD. Peak Forward Recovery Voltage, VFR M The maximum value of forward conduction voltage across the device upon the application of a specified voltage rate of rise and current rate of rise following a zero or specified reverse-voltage condition. Critical rate of rise of off-state voltage, dv/dt, (dvD /dt)cr The maximum rate of rise of voltage (below VDR M ) that will not cause switching from the off-state to the on- state. Breakover Current, I(BO) The instantaneous current flowing at the breakover voltage, V(BO). Switching Voltage, VS The instantaneous voltage across the device at the final point in the breakdown region prior to switching into the on-state. Switching Current, IS The instantaneous current flowing through the device at the switching voltage, VS. On-State Voltage, VT The voltage across the device in the on-state condition at a specified current IT.
DECEMBER 1995 - REVISED SEPTEMBER 1997 R3612 PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC PRODUCT INFORMATION On-State Current, IT The current through the device in the on-state condition. Forward Voltage, VF The voltage across the device in the forward conducting state at a specified current IF. Forward Current, IF The current through the device in the forward conducting state. thermal characteristic s Temperature Derating Derating with temperature above a specified base temperature, expressed as a percentage, such as may be applied to peak pulse current. Thermal Resistance, R θJL, R θJC , R θJA The effective temperature rise per unit power dissipation of a designated junction, above the temperature of a stated external reference point (lead, case, or ambient) under conditions of thermal equilibrium. Transient thermal impedance, ZθJL(t), ZθJC(t), ZθJA(t) The change in the difference between the virtual junction temperature and the temperature of a specified reference point or region (lead, case, or ambient) at the end of a time interval divided by the step function change in power dissipation at the beginning of the same time interval which causes the change of temperature-difference. NOTE - It is the thermal impedance of the junction under conditions of change and is generally given in the form of a curve as a function of the duration of an applied pulse. (Virtual-)Junction Temperature, T J A theoretical temperature representing the temperature of the junction(s) calculated on the basis of a simplified model of the thermal and electrical behaviour of the device. Maximum Junction Temperature, TJM The maximum value of permissible junction temperature, due to self heating, which a TSS can withstand without degradation. gate terminal parameter s Gate Trigger Current, IG T The lowest gate current required to switch a device from the off state to the on state. Gate Trigger Voltage, VG T The gate voltage required to produce the gate trigger current, IG T. Gate-to-Adjacent Terminal Peak Off-State Voltage, VGD M The maximum gate to cathode voltage for a p-gate device or gate to anode voltage for an n-gate device that may be applied such that a specified off-state current, ID, at a rated off-state voltage, VD, is not exceeded. Peak Off-State Gate Current, IGD M The maximum gate current that results from the application of the peak off-state gate voltage, VGD M . Gate Reverse Current, Adjacent Terminal Open, IGAO , IGK O The current through the gate terminal when a specified gate bias voltage, VG , is applied and the cathode terminal for a p-gate device or anode terminal for an n-gate device is open circuited.
PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC DECEMBER 1995 - REVISED SEPTEMBER 199 7 PRODUCT INFORMATION Gate Reverse Current, Main Terminals Short Circuited, IGA S, IGK S The current through the gate terminal when a specified gate bias voltage, VG , is applied and the cathode terminal for a p-gate device or anode terminal for an n-gate device is short-circuited to the third terminal. NOTE-This definition only applies to devices with integrated series gate blocking diodes. Gate Reverse Current, On-State, IGA T, IGK T The current through the gate terminal when a specified gate bias voltage, VG , is applied and a specified on- state current, IT, is flowing. NOTE-This definition only applies to devices with integrated series gate blocking diodes. Gate Reverse Current, Forward Conducting State, IGA F, IGK F The current through the gate terminal when a specified gate bias voltage, VG , is applied and a specified forward conduction current, IF, is flowing. NOTE-This definition only applies to devices with integrated series gate blocking diodes. Gate Switching Charge, Q G S The charge through the gate terminal, under impulse conditions, during the transition from the off-state to the switching point, when a specified gate bias voltage, VG , is applied. Peak Gate Switching Current, IGS M The maximum value of current through the gate terminal during the transition from the off-state to the switching point, when a specified gate bias voltage, VG , is applied. Gate-to-Adjacent Terminal Breakover Voltage, VGK(BO) ,VGA(BO ) The gate to cathode voltage for a p-type device or gate to anode voltage for an n-gate device at the breakover point. This is equivalent to the voltage difference between the breakover voltage, V(BO ), and the specified gate voltage, VG . APPLICATIONS INFORMATIO N electrical characteristic s The electrical characteristics of a thyristor over voltage protector are strongly dependent on junction temperature, T J . Hence a characteristic value will depend on the junction temperature at the instant of measurement. The values given in this data sheet were measured on commercial testers, which generally minimise the temperature rise caused by testing . gated protector evolution and characteristic s discrete gated protectio n The first gated thyristor protection arrangement used discrete components , Figure 4 . Positive line over voltages were clipped to ground by diodes D1 and D2. Negative line over voltages, via diodes D3 and D4, pulled the cathode of thyristor TH negative. Voltage limiting occurred when the negative over voltage caused the series gate diode, D5, and the thyristor gate-cathode to conduct. As the series gate diode was connected to the SLIC negative supply, the limiting voltage approximated to : V FD3/ 4 + V G K + V FD 5 + V G G wher e
V G G is the gate reference voltage provided from the negative SLIC supply voltage V BA T . V G K is the gate-cathode voltage of the thyristor . sufficient cathode current, the thyristor would regenerate and crowbar into a low voltage on-state condition. needs to be above this current level . during the clamping period . Figure 4. DISCRETE GATED THYRISTOR PROTECTION CIRCUI T
4 0 mA. The second gate current peak is lower due to the heating caused by the clipping action . the gate current peaks earlier as the thyristor starts to become active . avalanche diode, D6, provides the necessary protection by limiting the maximum supply voltage . LB1201AB device and the higher current Texas Instruments Inc. TCM1060 device , Figure 5 . Figure 6. PROTECTOR HIGH IMPEDANCE POWER CROSS CLAMPING WAVEFORM S
in some additional dissipation in the protector. gate current can be made to be a current drain, rather than a current injection, on the gate supply. supply decoupling capacitor, C1, should be dimensioned according to the text that accompanies Figure 5. designated as the gate terminal, G. Figure 7. IC VERSION OF Figure 4
PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC DECEMBER 1995 - REVISED SEPTEMBER 199 7 PRODUCT INFORMATION particular lightning surge wave shape has the fastest rise time and gives the largest voltage overshoot values. It is at least 20 times faster than the 10/1000 µs and 10/700 µs surges and so the 0.5/700 µs surge represents a worse case condition.
DECEMBER 1995 - REVISED SEPTEMBER 1997 R3612 PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC PRODUCT INFORMATION P00 plastic dual-in-line packag e This dual-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions The package is intended for insertion in mounting-hole rows on 7,62 (0.300) centers. Once the leads are compressed and inserted, sufficient tension is provided to secure the package in the board during soldering. Leads require no additional cleaning or processing when used in soldered assembly. MECHANICAL DAT A 1 2 3 4 8 7 6 5 10,2 (0.400) MAX Index Dot 1,78 (0.070) MAX
4 Places
5,08 (0.200) MAX 0,51 (0.020) MIN 2,54 (0.100) T.P.
6 Places
(see Note A) 0,533 (0.021) 0,381 (0.015)
8 Places
3,17 (0.125) MIN Seating Plane 0,36 (0.014) 0,20 (0.008) 105° 90° 6,60 (0.260) 6,10 (0.240) 7,87 (0.310) 7,37 (0.290) T.P. CL CL ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES P008 Designation per JEDEC Std 30: PDIP-T8 NOTE A: Each pin centerline is located within 0,25 (0.010) of its true longitudinal position MDXXABA
PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC DECEMBER 1995 - REVISED SEPTEMBER 199 7 PRODUCT INFORMATION IMPORTANT NOTIC E Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS . Copyright © 1997, Power Innovations Limited