R1200F RECTRON | Alldatasheet
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Technical content
HIGH VOLTAGE FAST RECOVERY RECTIFIER VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION
FEATURES
*Fast switching *Low leakage *High current capability *High surge capability *High reliability MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. R1200F THRU R2000F DO-41 MAXIMUM RA TINGS (At TA = 25 o C unless otherwise noted) Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (At TA = 25 o C unless otherwise noted) NOTES : Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A MECHANICAL DATA * Case: Molded plastic * Epoxy: Device has UL flammability classification 94V-O * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.35 gram 2001-6 RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Volts Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TA = 50 o C Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Operating and Storage Temperature Range SYMBOL VRRM VDC IO IFSM TJ, TSTG V RMS Volts Volts mAmps500 -65 to + 175 Amps 0 C UNITSR1200F 1200 R1800F R2000FR1500F 18001500 2000 840 1260 1050 1400 1200 18001500 2000 200 Volts CHARACTERISTICS Maximum Full Load Reverse Current Average, Full Cycle V F SYMBOL IR UNITS 2.5 5.0 uAmpsMaximum DC Reverse Current Maximum Instantaneous Forward Voltage at 0.5A/0.2A DC Volts4.0 100.375”, (9.5mm) lead length at TL = 55 o C R1200F R1800F R2000FR1500F uAmps Maximum Reverse Recovery Time (Note) at Rated DC Blocking Voltage TA = 25 o C trr 500 nSec 1.0 (25.4) MIN. .166 (4.2) .205 (5.2) 1.0 (25.4) MIN. .107 (2.7) .080 (2.0) DIA. .034 (0.9) .028 (0.7)DIA.
RATING AND CHARACTERISTIC CURVES ( R1200F THRU R2000F ) FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD PEAK FORWARD SURGE CURRENT, (A) NUMBER OF CYCLES AT 60Hz 1 10 100 8.3ms Single Half Sine-Wave (JEDEC Method) SURGE CURRENT Single Phase Half Wave 60Hz Inductive or Resistive Load FIG. 1 - TYPICAL FORWARD CURRENT AVERAGE FORWARD CURRENT, (mA) AMBIENT TEMPERATURE, ( ) DERATING CURVE 0 50 100 150 175 500 400 300 200 100 R2000F R1200F~R1800F trr +0.5A -0.25A -1.0A 1cm SET TIME BASE FOR 50/100 ns/cm FIG. 3 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC NONINDUCTIVE NONINDUCTIVE D.U.T
25 Vdc
(approx) ( - ) ( - ) ( + ) ( + ) NON- INDUCTIVE OSCILLOSCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) NOTES: 1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22 pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms.