SKY67177-11_V01 SKYWORKS | Alldatasheet
Document overview
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Technical content
Features
- Gain 34 dB @ 3.8 GHz
- Low noise figure 0.6 dB @ 3.8 GHz
- High IP3 performance: - IIP3 = –2 dBm @ 3.8 GHz, high gain mode - IIP3 = +14 dBm @ 3.8 GHz, bypass mode
- Low current
- Temperature and process-stable active bias up to +115 °C
- QFN (16-pin 3 x 3 mm) package (MSL1 @ 260 °C per JEDEC J-STD-020)
- For RoHS and other product compliance information, see Skyworks Certificate of Conformance.
Figure 1. Block Diagram
Description
The SKY67177-11 is a high gain low-noise amplifier with second stage bypass and exceptional linearity. The compact 3 x 3 mm, 16-pin QFN package LNA is designed for 4G LTE and 5G NR base stations operating from 2.3 to 5 GHz. The internal active bias circuitry provides stable performance over temperature and process variation. A functional block diagram is shown in Figure 1. The pin configuration and package are shown in Figure 2. Signal pin assignments and functional pin descriptions are provided in Table 1. Controller ENB BYP_CTL RF_IN RF_OUT
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Figure 2. Pinout (Top View) Table 1. Signal Descriptions
1 GND Ground 9 IBIAS2 Stage 2 amplifier current set
2 RF_IN RF input 10 GND Ground
3 GND RF/DC ground 11 RF_OUT RF output port
4 VDD_ANLG +5 V analog control voltage supply 12 GND Ground
6 IBIAS1 Stage 1 amplifier current set 14 GND Ground
7 GND Ground 15 GND Ground
8 BYP_CTL Controls second stage amplifier bypass mode of
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Table 2. Absolute Maximum Ratings1
- Exposure to maximum rating conditions for extended periods may reduce device reliability. Exceeding more than one limit listed may result in permanent damage to the
device unless otherwise specified.
- LTE 20 MHz TDD @ Tc = 105 °C, 70 µs pulse duration with 60 sec period, PAVG = +30 dBm, PAR = 9 dB @ supply voltage = +5.0 V .
ESD Handling: Industry-standard ESD handling precautions must be adhered to at all times to avoid damage to this device.
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Table 3. Electrical Specifications for 3.3 to 4.2 GHz Optimized Tuning, BOM21
- The min/max limits, valid over temperature –40 °C to 105 °C and voltage 4.75 V to 5.25 V, are verified by characterization.
- 200 MHz and 600 MHz BW specifications would require different external tune BOM.
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Figure 3. Small Signal Gain (dB) vs Frequency (GHz) Figure 4. Input Return Loss (dB) vs Frequency (GHz) Figure 5. Output Return Loss (dB) vs Frequency (GHz) Figure 6. Reverse Isolation (dB) vs Frequency (GHz)
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Figure 7. Noise Figure (dB) vs Frequency (GHz) Figure 8. IIP3 (dBm) vs Frequency (GHz) Figure 9. IP1dB (dBm) vs Frequency (GHz)
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Figure 10. Small Signal Gain (dB) vs Frequency (GHz) Figure 11. Input Return Loss (dB) vs Frequency (GHz) Figure 12. Output Return Loss (dB) vs Frequency (GHz) Figure 13. Reverse Isolation (dB) vs Frequency (GHz)
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Figure 14. Stability Factor, μ1 (dB) vs Frequency (GHz) Figure 15. Stability Factor, μ2 (dB) vs Frequency (GHz)
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Table 4. Electrical Specifications for 2.3 to 2.7 GHz Optimized Tuning, BOM1
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Figure 16. Small Signal Gain (dB) vs Frequency (GHz) Figure 17. Input Return Loss (dB) vs Frequency (GHz) Figure 18. Output Return Loss (dB) vs Frequency (GHz) Figure 19. Reverse Isolation (dB) vs Frequency (GHz)
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Figure 20. Noise Figure (dB) vs Frequency (GHz) Figure 21. IIP3 (dBm) vs Frequency (GHz) Figure 22. IP1dB (dBm) vs Frequency (GHz)
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Figure 23. Small Signal Gain (dB) vs Frequency (GHz) Figure 24. Input Return Loss (dB) vs Frequency (GHz) Figure 25. Output Return Loss (dB) vs Frequency (GHz) Figure 26. Reverse Isolation (dB) vs Frequency (GHz)
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Figure 27. Stability Factor, μ1 (dB) vs Frequency (GHz) Figure 28. Stability Factor, μ2 (dB) vs Frequency (GHz)
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Table 5. Electrical Specifications for 4.8 to 5.0 GHz Optimized Tuning, BOM3
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Figure 29. Small Signal Gain (dB) vs Frequency (GHz) Figure 30. Input Return Loss (dB) vs Frequency (GHz) Figure 31. Output Return Loss (dB) vs Frequency (GHz) Figure 32. Reverse Isolation (dB) vs Frequency (GHz)
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Figure 33. Noise Figure (dB) vs Frequency (GHz) Figure 34. IIP3 (dBm) vs Frequency (GHz) Figure 35. IP1dB (dBm) vs Frequency (GHz)
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Figure 36. Small Signal Gain (dB) vs Frequency (GHz) Figure 37. Input Return Loss (dB) vs Frequency (GHz) Figure 38. Output Return Loss (dB) vs Frequency (GHz) Figure 39. Reverse Isolation (dB) vs Frequency (GHz)
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Figure 40. Stability Factor, μ1 (dB) vs Frequency (GHz) Figure 41. Stability Factor, μ2 (dB) vs Frequency (GHz) Table 6. DC Electrical Specifications Table 7. (VDD1 = VDD2 = VDD_ANLG = 5.0 V, TC = +25 °C, Characteristic Impedance [Zo] = 50 Ω, Unless Otherwise Noted) Table 8. Truth Table
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diagram is shown below, followed by the Bill of Materials (BOM) for the three EVB versions.
- Ground all GND connectors.
- Set ENB and BYPASS_CTRL to LOW.
- Apply 5.0 V to VDD1, and VDD2, and VDD_ANLG.
- Turn Off RF input signal.
- Set ENB and BYPASS_CTRL to LOW.
- Apply 0 V to VDD1, VDD2, and VDD_ANLG.
Figure 42. Evaluation Board Schematic
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Table 9. Evaluation Board Bill of Materials for 2.3 to 2.7 GHz, BOM1
25 V DC 20% X6S
1.95 A 30 mΩ max
1.77 A 40 mΩ max
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Table 10. Evaluation Board Bill of Materials for 3.3 to 4.2 GHz, BOM2
1 A 30 mΩ max
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Table 11. Evaluation Board Bill of Materials for 4.8 to 5.0 GHz, BOM3
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Figure 43. Evaluation Board Assembly Diagram Figure 44. Layer Detail Physical Characteristics
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Since the device package is sensitive to moisture absorption, it is baked and vacuum packed before shipping. high temperature during solder assembly. environment. Production quantities of this product are shipped in a standard tape and reel format. Figure 45. Package Dimensions
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Figure 46. PCB Layout Footprint Figure 47. Tape and Reel Dimensions
Skyworks Solutions, Inc. • Phone [949] 231-3000 • sales@skyworksinc.com • www.skyworksinc.com 205909L • Skyworks Proprietary and Confidential Information • Products and Product Information are Subject to Change without Notice
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