ISL9R1560S3ST FAIRCHILD | Alldatasheet

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 Switch Mode Power Supplies  Hard Switched PFC Boost Diode  UPS Free Wheeling Diode  Motor Drive FWD  SMPS FWD  Snubber Diode Device Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Rating Unit VRRM Repetitive Peak Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current (TC = 145oC) 15 A IFRM Repetitive Peak Surge Current (20kHz Square Wave) 30 A IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 200 A K A CATHODE (FLANGE) CATHODE ANODE JEDEC STYLE TO-262 JEDEC TO-220AC CATHODE (FLANGE) ANODE N/CCATHODE (FLANGE) CATHODE ANODE JEDEC TO-263AB CATHODE (BOTTOM SIDE CATHODE ANODE MET AL) JEDEC STYLE TO-247 Package Symbol tm March 2001 15A, 600V, STEALTH™ Diode The ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most effic ient and highest power density design at lower cost.

  • Stealth Recovery trr = 29.4 ns (@ IF = 15 A)
  • Max Forward Voltage, VF = 2.2 V (@ TC = 25°C)
  • 600 V Reverse Voltage and High Reliability
  • Avalanche Energy Rated
  • RoHS Compliant ©2001 Fairchild Semiconductor Corporation ISL9R1560P2, ISL9R1560G2, ISL9R1560S2, ISL9R1560S3S Rev. B www.fairchildsemi.com1

ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S 15A, 600V, STEALTH™ Diode Package Marking and Ordering Information Electrical Characteristics TC = 25°C unless otherwise noted Off State Characteristics On State Characteristics Dynamic Characteristics Switching Characteristics Thermal Characteristics PD Power Dissipation 150 W EAVL Avalanche Energy (1A, 40mH) 20 mJ TJ, TSTG Operating and Storage Temperature Range -55 to 175 °C TL TPKG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s 300 260 CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Device Marking Device Package Tape Width Quantity R1560G2 ISL9R1560G2 TO-247 N/A 30 R1560P2 ISL9R1560P2 TO-220AC N/A 50 R1560S2 ISL9R1560S2 TO-262 N/A 50 R1560S3S ISL9R1560S3S TO-263AB 24 mm 800 Symbol Parameter Test Conditions Min Typ Max Unit IR Instantaneous Reverse Current VR = 600 V TC = 25°C - - 100 µA TC = 125°C- - 1 . 0 m A VF Instantaneous Forward Voltage IF = 15 A TC = 25°C- 1 . 8 2 . 2 V TC = 125°C - 1.65 2.0 V C J Junction Capacitance VR = 10 V, IF = 0 A - 62 - pF trr Reverse Recovery Time IF = 1 A, dI/dt = 100 A/µs, VR = 30 V - 25 30 ns IF = 15 A, dI/dt = 100 A/µs, VR = 30 V - 35 40 ns trr Reverse Recovery Time IF = 15 A, dIF/dt = 200 A/µs, VR = 390 V, TC = 25°C - 29.4 - ns Irr Reverse Recovery Current - 3.5 - A Q rr Reverse Recovered Charge - 57 - nC Trr Reverse Recovery Time IF = 15 A, dIF/dt = 200 A/µs, VR = 390 V, TC = 125°C -9 0-n s S Softness Factor (tb/ta)- 2.0 - Reverse Recovery Current - 5.0 - A Reverse Recovered Charge - 275 - nC trr Reverse Recovery Time IF = 15 A, dIF/dt = 800 A/µs, VR = 390 V, TC = 125°C -5 2-n s S Softness Factor (tb/ta) - 1.36 - Reverse Recovery Current - 13.5 - A Reverse Recovered Charge - 390 - nC dIM /dt Maximum di/dt during tb - 800 - A/µs R θJC Thermal Resistance Junction to Case - - 1.0 °C/W R θJA Thermal Resistance Junction to Ambient TO-247 - - 30 °C/W R θJA Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W R θJA Thermal Resistance Junction to Ambient TO-262 - - 62 °C/W R θJA Thermal Resistance Junction to Ambient TO-263 - - 62 °C/W Symbol Parameter Rating Unit Irr Q rr Irr Q rr ©2001 Fairchild Semiconductor Corporation ISL9R1560P2, ISL9R1560G2, ISL9R1560S2, ISL9R1560S3S Rev. B www.fairchildsemi.com2

Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions Figure 14. Avalanche Energy Test Circuit Figure 15. Avalanche Current and Voltage

0.25 IRM

ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S 15A, 600V, STEALTH™ Diode ©2001 Fairchild Semiconductor Corporation ISL9R1560P2, ISL9R1560G2, ISL9R1560S2, ISL9R1560S3S Rev. B www.fairchildsemi.com6