R1200F DSK | Alldatasheet
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Case:JEDEC DO--41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012ounces,0.34 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UNITS M axim um recurrent peak reverse voltage V RRM V Max imum RMS v oltage V RMS V Max imum DC bloc king v oltage V DC V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 0.5A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 M axim um reverse capacitance (Note1) t rr ns Typical thermal resistance (Note2) R θJA Typical junction capacitance (Note3) C J pF Operating junction temperature range T J Storage temperature range T STG 3. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 0.5 0.2 2.5 4.0 2. Thermal resistance from junction to ambient. - 55 ---- + 150 NOTE: 1. Measrued with I F =0.5A, I R =1A, I rr =0.25A. 100.0 - 55 ---- + 150 500 A 5.0 Easily cleaned with alcohol,Isopropanol and similar solvents I F(AV) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS The plastic material carries U/L recognition 94V-0 R1200F R1500F 1200 1500 1800 2000 A A 30.0 I FSM I R 1260 2000 1400 1200 840 1500 1050 R1800F R2000F 1800 R1200F --- R2000F HIGH VOLTAGE RECTIFIERS VOLTAGE RANGE: 1200 --- 2000 V CURRENT: 0.2A to 0.5A DO - 41 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
CAPACITANCE,P F INSTANTANEOUS FORWARD CURRENT FI G. 3 -- PEAK FORWARD SURGE CURREENT FI G. 4 -- TYPI CAL JUNCTI ON CAPACITANCE REVERSE VOLTAGE,VOLTSNUMBER OF CYCLES AT 60HZ FI G. 1 -- FORWARD DERATI NG CURVE FI G. 2 -- TYPI CAL FORWARD CHARACTERI STI CS R1200F --- R2000F AMBIEN T T EMPER AT U R E, INSTANTANEOUS FORWARD VOLTAGE, VOLTS PEAK FORWARD SURGE CURRENT AVERAGE FORWARD RECTIFIED CURRENT 1.6 2.6 0.01 0.1 1.0 3.6 4.60.6 T J =25 Pulse Width=300 µ s R200F R1200F- R1800F 100 1 10 100 T J =25 10 100 T J =125 8.3ms Single Half Sine - Wave 0.1 25 50 75 100 125 150 0.2 200175 0.3 0.4 0.5 R1200F - R1800F R2000F Single Phase Half Wave 60H Z Resistive or Inductive Load www.diode.kr Diode Semiconductor Korea