R1200_16 CHONGQING | Alldatasheet
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Technical content
-239- R1200 THRU R3000 0.5&0.2AMPS.HIGH VOLTAGE SILICON RECTIFIER FEATURE .Highcurrentcapability .Lowforwardvoltagedrop .Lowpowerloss,highefficiency .Highsurgecapability .Highvoltage .Hightemperaturesolderingguaranteed 260°C/10sec/0.375"leadlengthat5lbstension MECHANICAL DATA .Terminal:Platedaxialleadssolderableper MIL-STD202E,method208C .Case:MoldedwithUL-94ClassV-0recognized FlameRetardantEpoxy .Polarity:colorbanddenotescathode .Mountingposition:any DO-41 .787(20.0) MIN. .205(5.2) .166(4.2) .787(20.0) MIN. .107(2.7) .080(2.0) DIA. .032(0.8) .025(0.65) DIA. Dimensionsininchesand(millimeters) MAXIMUM RATINGS AND ELECTRONICALCHARACTERISTICS Ratingsat25℃ ambienttemperatureunlessotherwisespecified. Singlephase,halfwave,60Hz,resistiveorinductiveload. Forcapacitiveload,deratecurrentby20%. Type Number SYMBOL R1200 R1500 R1800 R2000 R2500 R3000 units MaximumRecurrentPeakReverseVoltage VRRM 1200 1500 1800 2000 2500 3000 V MaximumRMSVoltage VRMS 840 1050 1260 1400 1750 2100 V MaximumDCBlockingVoltage VDC 1200 1500 1800 2000 2500 3000 V MaximumAverageForwardrectifiedCurrent atTA=50°C IF(AV) 0.5 0.2 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) IFSM 30 A Maximum Forward Voltage Drop per element at MaximumDCReverseCurrent @TA=25°C atratedDCblockingvoltage @TA =100°C IR 5.0 µA500 MaximumFullLoadReverseCurrentAverage, FullCycle.375”(9.5mm)leadlengthatTL=55°C 30 TypicalJunctionCapacitance(Note) CJ 30 pF StorageTemperature TSTG -55to+150 °C OperationJunctionTemperature TJ -55to+125 °C