R1111N151A-TR-FE

R1111N_17 RICOH | Alldatasheet

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Technical content

LOW NOISE 150mA LDO REGULATOR NO.EA-057-120206 OUTLINE The R1111N Series are CMOS-based voltage regulator ICs with high output voltage accuracy, extremely low supply current, low ON-resistance, and high Ripple Rejection. Each of these voltage regulator ICs consists of a voltage reference unit, an error amplifier, resistors, a current limit circuit, and a chip enable circuit. These ICs perform with low dropout voltage and a chip enable function. The line transient response and load transient response of the R1111N Series are excellent, thus these ICs are very suitable for the power supply for hand-held communication equipment. The output voltage of these ICs is fixed with high accuracy. Since the package for these ICs is SOT-23-5 (Mini-mold) package , high density mounting of the ICs on boards is possible.

FEATURES

( For other voltages, please refer to MARK INFORMATIONS.)

• Low Temperature-Drift Coefficient of Output Voltage..Typ. ±100ppm/°C
• Built-in chip enable circuit ( 2 types; A: active “L”, B: active “H”)

APPLICATIONS

• Power source for cellular phones such as GSM, CDMA and various kinds of PCSs.
• Power source for electrical appliances such as cameras, VCRs and camcorders.
• Power source for battery-powered equipment.

The output voltage, the active type for the ICs can be selected at the user's request. Product Name Package Quantity per Reel Pb Free Halogen Free R1111Nxx1∗-TR-FE SOT-23-5 3,000 pcs Yes Yes xx : The output voltage can be designated in the range from 1.5V(15) to 5.0V(50) in 0.1V steps. (For other voltages, please refer to MARK INFORMATIONS.) ∗ : Designation of Active Type ( A ) " L " a c t i v e ( B ) " H " a c t i v e

• SOT-23-5 (mark side) PIN DESCRIPTION
• SOT-23-5 Pin No Symbol Pin Description

1 VDD Input Pin

2 GND Ground Pin

3 CE or CE Chip Enable Pin

4 NC No Connection

5 VOUT Output pin

VIN Input Voltage 9.0 V VCE Input Voltage( CE or CE Pin) -0.3 ~ VIN+0.3 V VOUT Output Voltage -0.3 ~ VIN+0.3 V IOUT Output Current 200 mA PD Power Dissipation ∗ 420 mW Topt Operating Temperature Range -40 ~ 85 °C Tstg Storage Temperature Range -55 ~ 125 °C ∗) For Power Dissipation, please refer to PACKAGE INFORMATION. ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured.

ELECTRICAL CHARACTERISTICS

z R1111Nxx1A (Topt=25°C) Symbol Item Conditions Min. Typ. Max. Unit VOUT Output Voltage VIN=V +SET 1V, 1mA≤IOUT≤30mA ×0.98 ×1.02 V IOUT Output Current Refer to ELECTRICAL CHARACTERISTICS BY OUTPUT VOLTAGE. ΔVOUT /ΔIOUT Load Regulation VIN=V +SET 1V, 1mA≤IOUT≤80mA 12 40 mV VDIF Dropout Voltage Refer to ELECTRICAL CHARACTERISTICS BY OUTPUT VOLTAGE. ISS Supply Current VIN=V +SET 1V, IOUT=0A 35 70 μA Istandby Standby Current VIN=VCE, VIN=V +SET 1V 0.1 1.0 μA ΔVOUT /ΔVIN Line Regulation VSET+0.5V≤VIN≤8.0V, IOUT=30mA 0.05 0.20 %/V RR Ripple Rejection f=1kHz, Ripple 0.5Vp-p, VIN=V +SET 1V 70 dB VIN Input Voltage 2.0 8.0 V ΔVOUT /ΔTopt Output Voltage Temperature Coefficient IOUT=10mA, −40°C≤Topt≤85°C ±100 Ppm /°C ISC Short Current Limit VOUT=0V 50 mA RPU CE Pull-up Resistance 2.5 5.0 10.0 MΩ VCEH CE Input Voltage “H” 1.5 VIN V VCEL CE Input Voltage “L” 0 0.25 V en Output Noise BW=10Hz to 100kHz 30 μVrms RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semico nductor devices operate within the recommended operating conditions. The semiconductor devic es cannot operate normally over the recommended operating conditions, even if when they are used over such c onditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when th ey continue to operate over the recommended operating conditions.

z R 1 1 1 1 N x x 1 B (Topt=25°C) Symbol Item Conditions Min. Typ. Max. Unit VOUT Output Voltage VIN=V +SET 1V, 1mA≤IOUT≤30mA ×0.98 ×1.02 V IOUT Output Current Refer to ELECTRICAL CHARACTERISTICS BY OUTPUT VOLTAGE. ΔVOUT /ΔIOUT Load Regulation VIN=V +SET 1V, 1mA ≤IOUT≤80mA 12 40 mV VDIF Dropout Voltage Refer to ELECTRICAL CHARACTERISTICS BY OUTPUT VOLTAGE. ISS Supply Current VIN=V +SET 1V, IOUT=0A 35 70 μA Istandby Standby Current VIN=V +SET 1V, VCE=GND 0.1 1.0 μA ΔVOUT /ΔVIN Line Regulation VSET+0.5V≤VIN≤8.0V, IOUT=30mA 0.05 0.20 %/V RR Ripple Rejection f=1KHz, Ripple 0.5Vp-p, VIN=V +SET 1V 70 dB VIN Input Voltage 2.0 8.0 V ΔVOUT /ΔTopt Output Voltage Temperature Coefficient IOUT=10mA, −40°C≤Topt≤85°C ±100 Ppm /°C ISC Short Current Limit VOUT=0V 50 mA RPD CE Pull-up Resistance 2.5 5.0 10.0 MΩ VCEH CE Input Voltage “H” 1.5 VIN V VCEL CE Input Voltage “L” 0 0.25 V en Output Noise BW=10Hz to 100kHz 30 μVrms RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semico nductor devices operate within the recommended operating conditions. The semiconductor devic es cannot operate normally over the recommended operating conditions, even if when they are used over such c onditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when th ey continue to operate over the recommended operating conditions.

ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE Topt = 25°C Output Current IOUT (mA) Output Voltage V OUT (V) Condition Min. 1.5 ≤ VSET ≤ 1.7 100 1.8 ≤ VSET ≤ 5.0 VIN=V +SET 1V 150 Topt = 25°C Dropout Voltage VDIF (V) Output Voltage V OUT (V) Condition Min. Typ. Max. 1.5 0.5 1.6 0.4 1.7 0.3 1.8 ≤ VSET ≤ 1.9 0.60 1.40 2.0 ≤ VSET ≤ 2.4 0.35 0.70 2.5 ≤ VSET ≤ 2.7 0.24 0.35 2.8 ≤ VSET ≤ 3.3 0.20 0.30 3.4 ≤ VSET ≤ 5.0 IOUT = 100mA 0.17 0.26 OPERATION R1111Nxx1A R1111Nxx1B VDD VOUT GNDR2 CE Current Limit Vref VDD VOUT GNDR2 CE Current Limit Vref In these ICs, fluctuation of output voltage, V OUT is detected by feed-back registers R1, R2, and the result is compared with a reference voltage by the error amplifier, so that a constant voltage is output. A current limit ircuit for protection at short mode and a chip enable circuit, are included. c

0.1μF 2.2μF R1111Nxx1B Series VDD VOUT ISS IN OUT GND CE 0.1μF 2.2μF Fig.1 Standard test Circuit Fig.2 Supply Current Test Circuit R1111Nxx1B Series VDD P. G 2 VOUT IOUT IN OUT GND CE R1111Nxx1B Series VDD VOUT IN OUT GND I1 I2 CE 1μF Fig.3 Ripple Rejection, Line Transient Fig.4 Load Transient Response Test Circuit Response Test Circuit

1) Output Voltage vs. Output Current R1111N181B R1111N301B 2.0 1.8 1.6 1.0 0.8 0.6 0.4 0.2 1.4 1.2 0.0 Output Current IOUT (mA) 0 200 300 400 500100 Output Voltage VOUT (V) 3.8V 2.8V 2.3V VIN = 2.1V Topt = 25°C 3.5 2.5 1.5 1.0 0.5 2.0 3.0 0.0 Output Current IOUT (mA) 0 200 300 400 500100 Output Voltage VOUT (V) 5.0V 4.0V 3.5V VIN = 3.3V Topt = 25°C R1111N401B R1111N501B 5.0 4.5 4.0 2.5 2.0 1.5 1.0 0.5 3.5 3.0 0.0 Output Current IOUT (mA) 0 200 300 400 500100 Output Voltage VOUT (V) 6.0V 5.0V 4.5V VIN = 4.3V Topt = 25°C 6.0 5.0 3.0 2.0 1.0 4.0 0.0 Output Current IOUT (mA) 0 200 300 400 500100 Output Voltage (V) 7.0V 6.0V 5.5V VIN = 5.3V Topt = 25°C 2) Output Voltage vs. Input Voltage R1111N181B R1111N301B 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.2 1.3 Input Voltage VIN (V) Output Voltage VOUT (V) IOUT = 1mA 30mA 50mA Topt = 25°C 3.1 3.0 2.9 2.8 2.7 2.5 2.6 Input Voltage VIN (V) Output Voltage VOUT (V) Topt = 25°C 30mA 50mA IOUT=1mA

4.5 4.0 3.5 3.0 2.5 Intput Voltage VIN (V) Output Voltage VOUT (V) IOUT = 1mA 30mA 50mA Topt = 25°C 5.5 5.0 4.0 3.5 3.0 4.5 2.5 Intput Voltage VIN (V) Output Voltage VOUT (V) IOUT = 1mA 30mA 50mA Topt = 25°C 3) Dropout Voltage vs. Output Current R1111N181B R1111N301B 1.20 1.00 0.80 0.60 0.40 0.20 0.00 Output Current IOUT (mA) 0 50 100 150 Dropout Voltage VDIF (V) Topt = 85°C 25°C -40°C 0.40 0.35 0.30 0.20 0.15 0.10 0.05 0.25 0.00 Output Current IOUT (mA) 0 50 100 150 Dropout Voltage VDIF (V) Topt = 85°C 25°C -40°C R1111N401B R1111N501B 0.40 0.35 0.30 0.25 0.20 0.15 0.00 0.05 0.10 Output Current IOUT (mA) 0 50 100 150 Dropout Voltage VDIF (V) Topt = 85°C 25°C -40°C 0.40 0.35 0.30 0.25 0.20 0.15 0.00 0.05 0.10 Output Current IOUT (mA) 0 50 100 150 Dropout Voltage VDIF (V) Topt = 85°C 25°C -40°C

4) Output Voltage vs. Temperature R1111N181B R1111N301B 1.90 1.88 1.86 1.80 1.78 1.76 1.74 1.72 1.84 1.82 1.70 Temperature Topt (°C) -50 0 25 50 10075-25 Output Voltage VOUT (V) VIN = 2.8V IOUT = 30mA 3.10 3.08 3.06 3.00 2.98 2.96 2.94 2.92 3.04 3.02 2.90 Temperature Topt (°C) -50 0 25 50 10075-25 Output Voltage VOUT (V) IOUT = 30mA VIN = 4.0V R1111N401B R1111N501B 4.10 4.08 4.06 4.00 3.98 3.96 3.94 3.92 4.04 4.02 3.90 Temperature Topt (°C) -50 0 25 50 10075-25 Output Voltage VOUT (V) IOUT = 30mA VIN = 5.0V 5.10 5.08 5.06 5.00 4.98 4.96 4.94 4.92 5.04 5.02 4.90 Temperature Topt (°C) -50 0 25 50 10075-25 Output Voltage VOUT (V) IOUT = 30mA VIN = 6.0V 5) Supply Current vs. Input Voltage R1111N181B R1111N301B Input Voltage VIN (V) Supply Current I ISS (μA) Topt = 25°C Input Voltage VIN (V) Supply Current I ISS (μA) Topt = 25°C

Intput Voltage VIN (V) Supply Current ISS (μA) Topt = 25°C Intput Voltage VIN (V) Supply Current ISS (μA) Topt = 25°C 6) Supply Current vs. Temperature R1111N181B R1111N301B Temperature Topt (°C) -50 50 1000 Supply Current ISS (μA) VIN = 2.8V Temperature Topt (°C) -50 50 1000 Supply Current ISS (μA) VIN = 2.8V R1111N401B R1111N501B Temperature Topt (°C) -50 50 1000 Supply Current ISS (μA) VIN = 5.0V Temperature Topt (°C) -50 50 1000 Supply Current ISS (μA) VIN = 6.0V

7) Dropout Voltage vs. Set Output Voltage R1111Nxx1B 0.8 0.9 1.0 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 I OUT = 150mA IOUT = 100mA IOUT = 50mA IOUT = 30mA IOUT = 10mA Set Output Voltage Vreg (V) Dropout Voltage VDIF (V) Topt = 25 8) Ripple Rejection vs. Frequency R1111N181B R1111N181B 0.1 1 10 100 IOUT = 1mA IOUT = 30mA IOUT = 50mA Frequuency f (kHz) Ripple Rejection RR (dB) VIN = 2.8VDC + 0.5Vp-p COUT = tantal 1.0μF 0.1 1 10 100 IOUT= 1mA IOUT = 30mA IOUT = 50mA Frequuency f (kHz) Ripple Rejection RR (dB) VIN = 2.8VDC + 0.5Vp-p COUT = tantal 2.2μF R1111N301B R1111N301B 0.1 1 10 100 IOUT = 1mA IOUT = 30mA IOUT = 50mA Frequuency f (kHz) Ripple Rejection RR (dB) VIN = 4VDC + 0.5Vp-p COUT = tantal 1.0μF 0.1 1 10 100 IOUT = 1mA IOUT = 30mA IOUT = 50mA Frequuency f (kHz) Ripple Rejection RR (dB) VIN = 4VDC + 0.5Vp-p COUT = tantal 2.2μF

0.1 1 10 100 IOUT= 1mA IOUT = 30mA IOUT = 50mA Frequeney f (kHz) Ripple Rejection RR (dB) VIN = 5.0VDC + 0.5Vp-p COUT = tantal 1.0μF 0.1 1 10 100 IOUT = 1mA IOUT = 30mA IOUT = 50mA Frequeney f (kHz) Ripple Rejection RR (dB) VIN = 5.0VDC + 0.5Vp-p COUT = tantal 2.2μF 9) Ripple Rejection vs. Input Voltage (DC bias) R1111N301B R1111N301B f = 400Hz f = 1kHz f = 10kHz Input Voltage V IN (V) Ripple Rejection RR (dB) IOUT = 1mA COUT = 2.2μF f = 400Hz f = 1kHz f = 10kHz Input Voltage VIN (V) IOUT = 10mA COUT = 2.2μF Ripple Rejection RR(dB) R1111N301B f = 400Hz f = 1kHz f = 10kHz IOUT = 50mA COUT = 2.2μF Input Voltage VIN (V) Ripple Rejection RR(dB)

10) Input Transient Response R1111N301B IOUT=30mA tr=tf=5 μs COUT=Tantalum 1.0μF 2.8 2.9 3.0 3.1 3.2 3.3 3.4 Time t (μs) Output Voltage VOUT (V) Input Voltage VIN (V) 0 20 40 60 80 100 120 Input Voltage Output Voltage R1111N301B IOUT=30mA tr=tf=5 μs COUT=Tantalum 2.2μF 2.8 2.9 3.0 3.1 3.2 3.3 3.4 0 20 40 60 80 100 120 Output Voltage VOUT (V) Input Voltage VIN (V) Time t (μs) Input Voltage Output Voltage R1111N301B IOUT=30mA tr=tf=5 μs COUT=Tantalum 4.7μF 2.8 2.9 3.0 3.1 3.2 3.3 3.4Output Voltage VOUT (V) Input Voltage VIN (V) 0 20 40 60 80 100 120 Time t (μs) Input Voltage Output Voltage

11) Load Transient Response R1111N301B VIN=4V CIN=Tantalum 1μF COUT=Tantalum 1.0μF 2.8 2.9 3.0 3.1 3.2 3.3 3.4 Time t (μs) Output Voltage VOUT (V) Output Current IOUT (mA) 02468 10 12 14 16 18 20 -150 -100 150 100 -50 Output Current Output Voltage R1111N301B VIN=4V CIN=Tantalum 1μF COUT=Tantalum 2.2μF 2.8 2.9 3.0 3.1 3.2 3.3 3.4 02468 10 12 14 16 18 20 -150 -100 150 100 -50 Time t (μs) Output Voltage VOUT (V) Output Current IOUT (mA)Output Current Output Voltage R1111N301B VIN=4V CIN=Tantalum 1μF COUT=Tantalum 4.7μF 2.8 2.9 3.0 3.1 3.2 3.3 3.4 02468 10 12 14 16 18 20 -150 -100 150 100 -50 Time t (μs) Output Voltage VOUT (V) Output Current IOUT (mA)Output Current Output Voltage

When using these ICs, consider the following points: In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, be sure to use a capacitor C OUT with good frequency characteristics and ESR (Equivalent Series Resistance) of which is in the range described as follows: VOUT IOUT VIN VIN CE GND ESR R1111N301B S.A. Ceramic Capacitor 1μF Ceramic Capacitor Spectrum Analyzer Measuring Circuit for white noise; R1111N301B The relationship between IOUT (output current) and ESR of output capacitor is shown in the graphs below. The conditions when the white noise level is under 40mV (Avg.) are indicated by the hatched area in the graph. (note: When the additional ceramic capacitors are connected to the output pin with output capacitor for phase compensation, the operation might be unstable. Because of this, test these ICs with as the same external components as the ones to be used on the PCB.) <Measurement conditions> (1) V IN=4V (2) Frequency Band: 10Hz to 1MHz (3) Temperature: 25 °C R1111N301B R1111N301B 100.0 10.0 1.0 0.1 0 10050 150 Output Current IOUT (mA) ESR (Ω) Ceramic 1.0μF 100.0 10.0 1.0 0.1 Output Current IOUT (mA) 0 10050 150 ESR (Ω) Ceramic 2.2μF

• Make VDD and GND lines sufficient. If their impedance is high, noise pick up or incorrect operation may result.
• Connect the capacitor with a capacitance of 1μF or more between VDD and GND as close as possible.
• Set external components, especially the output capacitor, as close as possible to the ICs and make wiring as short as possible. TYPICAL APPLICATION R1111Nxx1A VOUT OUTIN VDD GND CE Cap.Cap. R1111Nxx1B VOUT OUTIN VDD GND CE Cap.Cap.

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