R10U02DF THINKISEMI | Alldatasheet
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Features ITO-220AB/TO-220F-3L Unit:inch(mm) ※ ThinkiSemi latest&matured p rocess FRD/FRED ※ Low forward volta g e dro p ※ Hi g h current ca p abilit y Low reverse leakage current Low reverse leakage current ※ Hi g h sur g e current ca p abilit y Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Am p lifiers and Sound Device S y stems ※ Platin g Power Su pp l y ,Motor Control,UPS and SMPS etc. Mechanical Data ※ Case:Isolated fully plastic ITO-220AB/TO-220F-3L package Epoxy: UL 94V 0r a t ef l a m er e t a r d a n t Epoxy: UL 94V 0 rate flame retardant ※ Terminals: Solderable p er MIL-STD-202 method 208 ※ Polarit y : As marked on diode bod y ※ Mountin g p osition: An y ※ Wei g ht: 2.0 g ram a pp roximatel y R10U02DF thru R10U12DF Pb Free Plating Product R10U02DF thru R10U12DF Pb
10.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers
Common Cathode Common Anode Doubler Doubler Polarity Series Series Connection Suffix "RF" Suffix "DD" Suffix "DS"Suffix "DF" © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2Rev.12T MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Single phase,half wave,60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL UNIT VRRM 200 400 600 800 1000 1200 V VRMS 140 280 420 560 700 840 V VDC 200 400 600 800 1000 1200 V IF(AV) A IFSM A VF IR μA μA Trr nS CJ pF RθJC ℃/W TJ,TSTG ℃ Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Note:(3)Thermal Resistance junction to case. Typical Junction Capacitance (Note 2) 65 Typical Thermal Resistance (Note 3) 3.0 Operating Junction and Storage Temperature Range -55 to +175 Maximum Reverse Recovery Time (Note1) PARAMETER Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=125℃ (Total Device 2x5.0A=10.0A) 10.0 Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method)(Per Diode/Per Leg) 125 Maximum Instantaneous Forward Voltage @5.0A(Per Diode/Per Leg) Maximum DC Reverse Current @TJ=25℃ At Rated DC Blocking Voltage @TJ=125℃ 1.0 100 1.50-1.70 25-50 50-75 R10U02DF R10U04DF R10U06DF R10U08DF R10U10DF R10U12DF .130(3.3) .114(2.9) .071(1.8) .055(1.4) .035(0.9) .011(0.3) (2.55) (2.55) .1 .1 .032(.8) .606(15.4) .543(13.8) .161(4.1)MAX .134(3.4) .165(4.2).381(9.7) .114(2.9) .098(2.5) .055(1.4) .039(1.0) MAX .583(14.8) .512(13.0) .118(3.0)
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.12T FIG.1 - FORWARD CURRENT DERATING CURVE FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 0.1 0 125 CASE TEMPERATURE, INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 100 125 1 10 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.1 1000 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 JUNCTION CAPACITANCE, pF 1000 1.0 4.0 10 100 100
60 Hz Resistive or
Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) T J =25 PULSE WIDTH=300uS 1% DUTY CYCLE T J =125 T J =25 T J = 25 f = 1.0 MHZ Vsig = 50mVp-p R10U02DF R10U04DF R10U06DF R10U08DF/R10U10DF/R10U12DF 62.5 187.5 R10U02DF thru R10U12DF