LPD3330 ETC2 | Alldatasheet
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PHOTO DIODE SILICON PIN LED LAMPS SERIES MAXIMUM RATINGS (TA=25 )‧℃ Package Dimension Description The LPD3330 series are silicon planar P/N photodiodes incorporated in plastic package that simultaneously serve as filter and are also Transparent for infrared emission their terminals are soldering tabs arranged in 2.54mm center to center spacing due to their design the diodes can vertically be assembled on pc boards arrays can be realized by multiple arrangement versatile photodetectors are suitable for diodes as well as voltaic cell operation the signal noise ratio is particularly favorable even at low illuminance the P/N photodiode are outstanding for low junction capacitance high cut-off frequency and fast switching times. They are particularly suitable for IR sound transmission and remote control the cathode of LPD3330 photodiode is marked by a stamping on the package edge ELECTRICAL CHARACTERISTICS AT (TA= )‧℃ DOC.NO:QW0905-LPD3330 REV:B Date:17 - Aug - 2005 LPD3330 NOTE:1.All dimension are In millimeters tolerance Is ±0.25 unless otherwise noted 2.Specifications are subject to change without notice Characteristic Symbol Rating nit Characteristic Symbol Test Condition UnitMin Typ Max Reverse Break Down Voltage VBR 30 V Tstg ℃ ℃-30 ﹣ +60ToprOperating Temperature mW150PDPower Dissipation Storage Temperature -40 ﹣ +60 ns－50VR=10V RL=1KΩ－ － 940 － nm VR=3V f=1MHZ － 20 － pF λP=940nm _ － mV Ee=0.5mW/c㎡ VR=5V Ee=0.5mW/c㎡ 1.5 2.0 － uA VR=10V － 1.0 30 nAID Isc Voc CT λsmax tr,tf Dark Current Short Circuit Current Open Circuit Voltage Total Capacitance Peak Wavelength of Max Sensitivity Rise Time,Fall Time 350 Ee=0mW/c㎡ λP=940nm Ee=0mW/c㎡ 8.6 5.0 5.9 1.5MAX □0.5 TYP 1.0MIN 25.0MIN 2.54TYP 7.6