QM8205V

QM8205V VBSEMI | Alldatasheet

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• Halogen-free Option Available  TrenchFET ® Power MOSFETs PRODUCT SUMMARY VDS (V) RDS(on) (Ω)I D (A) 0.024 at VGS = 4.5 V 6.0 0.028 at VGS = 2.5 V 5.0 Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C ID 6.0 5.2 A TA = 70 °C 4.8 4.2 Pulsed Drain Current IDM 30 Continuous Source Current (Diode Conduction)a IS 1.5 1.0 Maximum Power Dissipationa TA = 25 °C PD 1.5 1.0 WTA = 70 °C 0.96 0.64 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 72 83 °C/WSteady State 100 120 Maximum Junction-to-Foot (Drain) Steady State RthJF 55 70 Available Pb-free RoHS* COMPLIANT D D D1/D2 TSOP6 Top View D1/D2 G11 QM8205V www.VBsemi.com  100 % R g Tested  Compliant to RoHS Directive 2002/95/EC g A ll data sheet.com

Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are st ress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. a Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.5 1.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V ± 200 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µAVDS = 20 V, VGS = 0 V, TJ = 70 °C 25 On-State Drain Currentb ID(on) VDS ≤ 5 V, VGS = 4.5 V 30 A Drain-Source On-State Resistanceb RDS(on) VGS = 4.5 V, ID = 5.5 A 0.024 ΩVGS = 2.5 V, ID = 3.5 A 0.028 Forward Transconductanceb gfs VDS = 10 V, ID = 5.5 A 30 S Diode Forward Voltageb VSD IS = 1.5 A, VGS = 0 V 0.71 1.2 V Dynamica Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 5.5 A 12 18 nCGate-Source Charge Qgs 2.2 Gate-Drain Charge Qgd 3.6 Tur n-On Delay Time td(on) VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω 245 365 ns Rise Time tr 330 495 Turn-Off Delay Time td(off) 860 1300 Fall Time tf 510 765 Gate-Current vs. Gate-Source Voltage 0 3 6 9 12 15 18 - Gate Current (mA)IGSS VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage 0369 1 2 15 0.01 100 10000 T J = 25 °C - Gate Current (A) I GSS 0.1 1000 V GS - Gate-to-Source Voltage (V) T J = 150 °C www.VBsemi.com QM8205V g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature 0.5 1.0 1.5 2.0 4.5 6.0 012345 VGS = 5 thru 3 V 2 V 2.5 V VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 VGS = 4.5 V VGS = 2.5 V - On-Resistance (Ω)RDS(on) ID - Drain Current (A) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 2 5 5 0 7 5 100 125 150 V GS = 4.5 V I D = 5.5 A TJ - Junction Temperature (°C) (Normalized) - On-ResistanceRDS(on) Transfer Characteristics Gate Charge Source-Drain Diode Forward Voltage 0.5 1.0 1.5 2.0 2.5 6.0 T C = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID 25 °C 0 3 6 9 12 15 V DS = 10 V I D = 5.5 A - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS 1.2 1.5 0.1 0 0.3 0.6 0.9 T J = 25 °C T J = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A) IS www.VBsemi.com QM8205V 1 V g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.01 0.02 0.03 0.04 0.05 0 123456 ID = 5.5 A - On-Resistance (Ω)R DS(on) VGS - Gate-to-Source Voltage (V) 0.001 160 200 100.1 Power (W) Time (s) 120 0.01 Threshold Voltage Safe Operating Area, Junction-to-Case - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 2 5 5 0 7 5 100 125 150 I D = 250 µA Variance (V)VGS(th) TJ - Temperature (°C) 0.1 1 10 100 0.01 5 1 ms - Drain Current (A)ID 0.1 Limited by RDS(on)* T C = 25 °C Single Pulse 10 ms 100 ms DC 10 s 1 s VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 100 600 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 1. Duty Cycle, D = 2. Per Unit Base = R th J A = 11 5 °C/W 3. T JM - T A = P DM Z th J A (t ) t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM Square Wave Pulse Duration (s) Normalized Ef fective T ransient Thermal Impedance www.VBsemi.com QM8205V g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 11 010-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance www.VBsemi.com QM8205V g A ll data sheet.com

L 5 4 R R C 0.15 M B A b C 0.08

0.17 Ref

-C- Seating Plane A 1 A 2 A -A- D -B- E 1 E L 2 (L 1 ) c 4x 1 4x 1 e 2 3 6 5 4 C 0.15 M B A b -B- E 1 E e 5-LEAD TSOP 6-LEAD TSOP TSOP: 5/6−LEAD JEDEC Part Number: MO-193C MILLIMETERS INCHES Dim Min Nom Max Min Nom Max A 0.91 - 1.10 0.036 - 0.043 A 1 0.01 - 0.10 0.0004 - 0.004 e 0.95 BSC 0.0374 BSC L 0.32 - 0.50 0.012 - 0.020 L 1 0.60 Ref 0.024 Ref L 2 0.25 BSC 0.010 BSC 0 4 8 0 4 8 1 7 Nom 7 Nom ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 www.VBsemi.com QM8205V g A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR TSOP-6 0.119 (3.023) Recommended Minimum Pads Dimensions in Inches/(mm) 0.099 (2.510) 0.064 (1.626) 0.028 (0.699) 0.039 (1.001) 0.020 (0.508) 0.019 (0.493) www.VBsemi.com QM8205V g A ll data sheet.com

All products due to improve reliability, functio n or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, age nts, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBse mi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any o ther any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation o r warranty on the product for any particular purpose of any goods or continuous production. To the maxi mum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liab ility arising out of or use of any products; (2) any and all liability, including but not limited to special, consequ ential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringeme nt and merchantability guarantee. Statement on certain types of applications are b ased on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan d emand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular applicatio n is non-binding. It is the customer's responsibility to verify specific product features in the products described in the s pecification is appropriate for use in a particular application. Parameter data sheets and technical specifica tions can be provided may vary depending on the application and performance over time. All operating parameters, i ncluding typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, includ ing but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsem i products are not intended for use in medical, life saving, or life sustaining applications or any other a pplication. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Ta iwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi p eople who are related to product design applications and other terms and conditions in writing. The information provided in this document and th e company's products without a license, express or implied, by estoppel or otherwise, to any intellectual p roperty rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. MaterialCategoryPolicy Taiwan VBsemi Electronics Co., Ltd., hereby certi fy that all of the products are determined to be RoHS compliant and meets the definition of restric tions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronicequipment(EEE)-modification,unlesso therwisespecifiedasinconsistent.(www.VBsemi.com) PleasenotethatsomedocumentsmaystillrefertoTa iwanVBsemiRoHSDirective2002/95/EC.We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65/. Taiwan VBsemi Electronics Co., Ltd. hereby certify th at all of its products comply identified as halogen-free halogen-free standards required by th e JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 6 1249-2-21, and we are sure that all products conformtoconfirmcompliancewithIEC61249-2-21stan dardlevelJS709A. www.VBsemi.com QM8205V A ll data sheet.com