QM6208V VBSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 9
Technical content
Dual N-Channel 60 V (D-S) MOSFET
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition TrenchFETPower MOSFET 100 % R g and UIS Tested Compliant to RoHS Directive 2002 /95/EC
APPLICATIONS
CCFL Inverter DC/DC Conver ter HDD PRODUCT SUMMARY VDS (V) R DS(on) () ID (A)a Qg (Typ.) 0.048 at VGS = 10 V 4.2 4.9 0.06 at VGS = 4.5 V 3.6 Notes: a. Based on TC = 25 °C. b. Surface mou nted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 °C/W. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 4.2 A TC = 70 °C 3.6 TA = 25 °C 4.0b, c TA = 70 °C 3.0b, c Pulsed Drain Current (10 µs Pulse Width) IDM 16 Source-Drain Current Diode Current TC = 25 °C IS 2.6 TA = 25 °C 1.6b, c Pulsed Source-Drain Current ISM 16 Single Pulse Avalanche Current L = 0.1 mH IAS 10 Single Pulse Avalanche Energy EAS 5 Maximum Power Di ssipation TC = 25 °C PD 2.8 WTC = 70 °C 1.8 TA = 25 °C 2b, c TA = 70 °C 1.28b, c Operating Junction and Storage T emperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction-to-Ambientb, d t 10 s RthJA 49 62.5 °C/WMaximum Junction-to-Foot (Drain) S teady-State RthJF 30 40 TSOP-6 Top View 2.85 mm 3 mm D2 G2 S1 S2 D1 G1 N-Channel MOSFET G 1 S 1 N-Channel MOSFET G 2 S 2 QM6208V www.VBsemi.com g A ll data sheet.com
Notes: a. Guaranteed by design, not subject to production testing. Pulse test; pulse width 300 µs, duty cycle 2 %. Stresses beyond those listed und er “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, un less otherwise noted) Parameter Symbo l Test Conditions Min. Typ. a Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 60 V VDS Temperature Coefficient VDS/TJ ID = 250 µA 49 mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ - 5.2 Gate Threshold Voltage VGS(th) VDS = VGS, ID= 250 µA 1.2 2.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V 100 nA Zero Gate Vo ltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 µAVDS = 60 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 20 A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 4.0A 0.048 VGS = 4.5 V, ID = 3.0A 0.060 Forward Transconductanceb gfs VDS = 15 V, ID = 4.0A 35 S Dynamica Input Capacitance Ciss VDS = 30 V, VGS = 0 V, ID = 1 MHz 580 pFOutput Capacitance Coss 100 Reverse Transfer Capacitance Crss 42 Total Gate Charge Qg VDS = 30 V, VGS = 10 V, ID = 4.0 A 10 15 nCVDS = 30 V, VGS = 4.5 V, ID = 4.0 A 4.9 7.4 Gate-Sou rce Charge Qgs 1.5 Gate-Drain Charge Qgd 1.5 Gate Resistan ce Rg f = 1 MHz 0.6 2.7 5 .4 Tur n-On Delay Time td(on) VDD = 30 V, RL = 2 ID 4.0 A, VGEN = 10 V, Rg = 1 71 4 ns Rise Time tr 91 8 Turn-Off Delay Ti me td(off) 16 32 Fall Tim e tf 81 6 Tur n-On Delay Time td(on) VDD = 20 V, RL = 2 ID 7.0 A, VGEN = 4.5 V, Rg = 1 12 24 Rise Time tr 10 20 Turn-Off Delay Ti me td(off) 13 26 Fall Tim e tf 81 6 Drain-Source Bod y Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 2.6 A Pulse Diode Forward Currenta ISM 50 Body Diode Voltage VSD IS = 3 A 0.77 1.2 V Body Diode Reverse Reco very Time trr IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 15 30 ns Body Diode Reverse Reco very Charge Qrr 7.5 15 nC Rev erse Recovery Fall Time ta 9 ns Reverse Recovery Rise Time tb 6 QM6208V www.VBsemi.com g A ll data sheet.com
STICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Cu rrent Gate Charge 0.0 0.5 1.0 1 .5 2.0 2.5 VGS =1 0Vt h r u4V VGS =3V VGS =2V VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 0.030 0.040 0.050 0.060 0.070 0.080 0 1 02 03 04 05 0 VGS =4 . 5V VGS =1 0V RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 10.5 ID =6A VDS =2 0V VDS =3 0V VDS =1 0V Qg - Total Gate Charge (nC) VGS - Gate-to-Source Voltage (V) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 012345 TC = 125 °C TC = 25 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Crss 150 300 450 600 750 0 8 16 24 32 Ciss Coss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) TJ - Junction Temperature (°C) (Normalized) RDS(on) - On-Resistance 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 ID =6A VGS =4 .5 V VGS =1 0V QM6208V www.VBsemi.com g A ll data sheet.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-D rain Diode Forward Voltage Threshold Voltage 1.0 1.2 0.01 0.001 0.1 100 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) IS - Source Current (A)VGS(th) Variance (V) TJ - Temperature (°C) - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID =5m A ID = 250 μA On-Resistance vs. Gate-to- Source Voltage Single Pulse Power, Junction-to-Ambient RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) 0.000 0.016 0.032 0.048 0.064 0.080 012 345 67 89 1 TJ =2 5 ° C TJ = 125 °C ID =4.0A 0 111 0 0 . 0 0.01 0.1 Time (s) Power (W) Safe Operating Area 0.01 100 100 0.01 0.1 10 s 10 ms 0.1 1 10 TA = 25 °C Single Pulse 1m s DCBVDSS Limited 100 ms Limited by RDS(on)* VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified ID - Drain Current (A) QM6208V www.VBsemi.com g A ll data sheet.com
STICS (25 °C, unless otherwise noted) * The power dissipation PD is based on T J(max) = 150 °C, using junction-to-case th ermal resistance, and is more useful in settling the upper dissipat ion limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 TC - Case Temperature (°C) ID - Drain Current (A) Power Derating , Junction-to-Foot 0.0 0.8 1.6 2.4 3.2 4.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Power Dera ting, Junction-to-Ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power (W) QM6208V www.VBsemi.com g A ll data sheet.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Thermal Trans ient Impedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = Per Unit Base = RthJA = 120 °C/W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Thermal Tran sient Impedance, Junction-to-Foot 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 0.05 Single Pulse 0.02 QM6208V www.VBsemi.com g A ll data sheet.com
L 5 4 R R C 0.15 M B A b C 0.08
0.17 Ref
-C- Seating Pl ane A 1 A 2 A -A- D -B- E 1 E L 2 (L 1 ) c 4x 1 4x 1 e 2 3 6 5 4 C 0.15 M B A b -B- E 1 E e 5-LEAD TSOP 6-LEAD TSOP TSOP: 5/6−LEAD JEDEC Part Number: MO-193C MILLIMETERS INCHES Dim Min Nom Max Min Nom Max A 0.91 - 1.10 0.036 - 0.043 A 1 0.01 - 0.10 0.0004 - 0.004 e 0.95 BSC 0.0374 BSC L 0.32 - 0.50 0.012 - 0.020 L 1 0.60 Ref 0.024 Ref L 2 0.25 BSC 0.010 BSC 0 4 8 0 4 8 1 7 Nom 7 Nom ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 QM6208V www.VBsemi.com g A ll data sheet.com
RECOMMENDED MINIMUM PADS FOR TSOP-6 0.119 (3.023) Recommended Minimum Pads Dimensions in Inches/(mm) 0.099 (2.510) 0.064 (1.626) 0.028 (0.699) 0.039 (1.001) 0.020 (0.508) 0.019 (0.493) QM6208V www.VBsemi.com g A ll data sheet.com
roducts due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiw an VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their repre sentatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or inco mplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiw an VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any g oods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi reli nquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, incl uding but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, incl uding a particular purpose, non-infringement and merchantability guarantee. Stat ement on certain types of applications are based on knowledge of the product is often used in a typical appl ication of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the produ ct is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific produ ct features in the products described in the specification is appropriate for use in a particular application. Param eter data sheets and technical specifications can be provided may vary depending on the application and perfo rmance over time. All operating parameters, including typical parameters must be made by customer's tech nical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsem i purchasing terms and conditions, including but not limited to warranty herein. Unle ss expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or li fe sustaining applications or any other application. Wherein VBsemi product failure could lead to personal inju ry or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own ri sk. Contact your authorized Taiwan VBsemi people who are related to product design applications and othe r terms and conditions in writing. The i nformation provided in this document and the company's products without a license, express or implied, by es toppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product name s and trademarks referred to herein are trademarks of their respective representatives will be all. Mater ialCategoryPolicy Taiw an VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be oHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011 /65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and elec tronicequipment(EEE)-modification,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) Plea senotethatsomedocumentsmaystillrefertoTaiwanVBsemiRoHSDirective2002/95/EC.We confi rm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011 /65/. Taiw an VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halo gen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBse mi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products confo rmtoconfirmcompliancewithIEC61249-2-21standardlevelJS709A. QM6208V www.VBsemi.com A ll data sheet.com