QM2605V

QM2605V VBSEMI | Alldatasheet

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• Halogen-free According to IEC 61249-2- Definition  TrenchFET ® Power MOSFET 1 0 0 % Rg Tested  Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) R DS(on) (Ω)I D (A) N-Channel 20 0.022 at VGS = 10 V 5. 0.036 at VGS = 4.5 V 4.2 P-Channel - 20 0.030 at VGS = - 10 V - 3.4 0.079 at VGS = - 4.5 V - 2.5 TSOP-6 Top View 2.85 mm 3 mm D2G2 S1S2 D1G1 N-Channel MOSFET P-Channel MOSFET Notes: a. Surface Mounted on FR4 board. b. t ≤ 5 s. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless ot herwise noted Parameter Symbol N-Chan nel P-Channel Unit Drain-Source Voltage VDS 20 - 20 V Gate-Source Voltage VGS ± 20 ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C ID 5. - 3.4 A TA = 70 °C 4.0 - 2.3 Pulsed Drain Current IDM Continuous Source Current (Diode Conduction)a, b IS 1.05 - 1.05 Maximum Power Di ssipationa, b TA = 25 °C PD 1.15 WTA = 70 °C 0.73 Operating Junction and Stor age Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 5 s RthJA 93 110 °C/WSteady State 130 150 Maximum Junction-to-Lead Steady Sta te RthJL 75 90 N- and P-Channel V (D-S) MOSFET QM2605V www.VBsemi.com 15 10 0 2 g A ll data sheet.com

Notes: a. Pu lse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed und er “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unle ss otherwise noted Parameter Sy mbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 0.6 VVDS = VGS, ID = - 250 µA P-Ch - 0.7 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V N-Ch ± 100 nAP-Ch ± 100 Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V N-Ch 1 µA VDS = - 24 V, VGS = 0 V P-Ch - 1 VDS = 24 V, VGS = 0 V, TJ = 55 °C N-Ch 5 VDS = - 24 V, VGS = 0 V, TJ = 55 °C P-Ch - 5 On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V N-Ch 3.7 AVDS = - 5 V, VGS = - 10 V P-Ch - 3 Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 2.5 A N-Ch 0.022 Ω VGS = - 10 V, ID = - 1.8 A P-Ch 0. VGS = 4.5 V, ID = 2.0 A N-Ch 0.030 VGS = - 4.5 V, ID = - 1.2 A P-Ch 0.079 Forward Transconductancea gfs VDS = 10 V, ID = 2.5 A N-Ch 4.3 SVDS = - 15 V, ID = - 1.8 A P-Ch 2.4 Diode Forward Voltagea VSD IS = 1.05 A, VGS = 0 V N-Ch 0.81 1.10 VIS = - 1.05 A, VGS = 0 V P-Ch - 0.83 - 1.10 Dynamicb Total Gate Charge Qg N-Channel VDS = 15 V, VGS = 5 V, ID = 1.8 A P-Channel VDS = - 15 V, VGS = - 5 V, ID = - 1.8 A N-Ch 2.1 3.2 nC P-Ch 2.4 3.6 Gate-Source Charge Qgs N-Ch 0.7 P-Ch 0.9 Gate-Dr ain Charge Qgd N-Ch 0.7 P-Ch 0.8 Ga te Resistance Rg N-Ch 0.5 2.4 ΩP-Ch 3 11 Tu r n-On Delay Time td(on) N-Channel VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω P-Channel VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω N-Ch 7 11 ns P-Ch 8 1 Rise Time tr N-Ch 9 14 P-Ch 12 18 T urn-Off Delay Time td(off) N-Ch 13 20 P-Ch 12 18 Fal l Time tf N-Ch 5 8 P-Ch 7 1 1 Source-Dr ain Reverse Recovery Time trr IF = 1.05 A, dI/dt = 100 A/µs N-Ch 35 60 IF = - 1.05 A, dI/dt = 100 A/µs P-Ch 30 60 QM2605V www.VBsemi.com 055 g A ll data sheet.com

ICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Res istance vs. Drain Current Gate Charge 012345 VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID VGS = 10 V thru 5 V 4 V

3 V2 V

0.00 0.01 0.02 0.03 0.04 0.05 01234567 RDS(on) ID - Drain Current (A) VGS = 10 V VGS = 4.5 V - On-Resistance (Ω) 01234 - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 15 V ID = 1.8 A Transfer Characteristics Capacitance On -Resistance vs. Junction Temperature 0123456 VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID 25 °C TC = - 55 °C 125 °C 100 150 200 250 300 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Crss Coss Ciss 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) (Normalized) - On-Resistance RDS(on) VGS = 10 V ID = 2.5 A QM2605V www.VBsemi.com g A ll data sheet.com

N-CHANNEL TYPICAL CHARACTERI STICS 25 °C, unless otherwise noted Source-Drain Diod e Forward Voltage Threshold Voltage 1.0 1.2 0.1 0 0.2 0.4 0.6 0.8 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)IS - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA Variance (V)VGS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Vol tage Single Pulse Power (Junction-to-Ambient) 0.00 0.02 0.04 0.06 0.08 0.10 02468 1 0 ID = 2.5 A - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source Voltage (V) ID = 2 A 0.01 10 300.1 Power (W) Time (s) Normalized Th ermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 10-3 10-2 1 10 60010-110-4 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 100 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 130 °C/W 3. TJM - T A = PDMZthJA(t) Notes: 4. Surface Mounted PDM QM2605V www.VBsemi.com g A ll data sheet.com

ICAL CHARACTERISTICS 25 °C, unless otherwise noted P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normali zed Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 11 010-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Output Characteristics On -Resistance vs. Drain Current 0 1234 5 VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D VGS = 10 V thru 7 V

2 V 3 V

0.0 0.06 0.07 0.08 0.09 0.1 0.2 01234567 RDS(on) ID - Drain Current (A) VGS = 10 V VGS = 4.5 V - On-Resistance (Ω) Transfe r Characteristics Capacitance 0123456 VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID TC = - 55 °C 125 °C 25 °C 120 180 240 300 0 6 12 18 24 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Crss Coss Ciss QM2605V www.VBsemi.com g A ll data sheet.com

TERISTICS 25 °C, unless otherwise noted Gate Charge Source- Drain Diode Forward Voltage Threshold Voltage 012345 - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 15 V ID = 1.8 A 1.2 1.5 0.1 0.00 0.3 0.6 0.9 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)I S - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) ID = 250 µA Variance (V)VGS(th) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 5 50 75 100 125 150 VGS = 10 V ID = 1.8 A TJ - Junction Temperature (°C) (Normalized) - On-Resistance RDS(on) 0.0 0.06 0.07 0.08 0.09 0.1 0.2 02468 1 0 VGS - Gate-to-Source Voltage (V) - On-Resistance (Ω)RDS(on) ID = 1.8 A ID = 1 A 0.01 10 300.1 Power (W) Time (s) QM2605V www.VBsemi.com g A ll data sheet.com

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, un less otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 10-3 10-2 1 10 60010-110-4 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 100 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 130 °C/W 3. TJM - T A = PDMZthJA(t) Notes: 4. Surface Mounted PDM Normalized Th ermal Transient Impedance, Junction-to-Foot 10-3 10-2 11 010-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance QM2605V www.VBsemi.com g A ll data sheet.com

L 5 4 R R C 0.15 M B A b C 0.08

0.17 Ref

-C- Sea ting Plane A 1 A 2 A -A- D -B- E 1 E L 2 (L 1 ) c 4x 1 4x 1 e 2 3 6 5 4 C 0.15 M B A b -B- E 1 E e 5-LEAD TSOP 6-LEAD TSOP TSOP: 5/6−LEAD JEDEC Part Number: MO-193C MILLIMETERS INCHES Dim Min Nom Max Min Nom Max A 0.91 - 1.10 0.036 - 0.043 A 1 0.01 - 0.10 0.0004 - 0.004 e 0.95 BSC 0.0374 BSC L 0.32 - 0.50 0.012 - 0.020 L 1 0.60 Ref 0.024 Ref L 2 0.25 BSC 0.010 BSC 0 4 8 0 4 8 1 7 Nom 7 Nom ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 QM2605V www.VBsemi.com g A ll data sheet.com

0.119 (3.023) Recommended Minimum Pads Dimensions in Inches/(mm) 0.099 (2.510) 0.064 (1.626) 0.028 (0.699) 0.039 (1.001) 0.020 (0.508) 0.019 (0.493) QM2605V www.VBsemi.com g A ll data sheet.com

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