Q825

Q825 ETC1 | Alldatasheet

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Q825 8-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q825 Date: February 1, 2011 Page 1 of 10 Version# 1.1 Feature:  High Isolation voltage between input and output (Viso = 5000V rms)  Creepage distance > 7.62mm  Current transfer ratio (CTR: 600~7500% at IF=1mA, VCE=2V)  Operating Temperature up to 100 ºC  Available in Tube or Tape and reel  Available with standard DIP-8, Wide lead bend, and SMD lead bend options.  Conventional black housing package Schematic: Certification & Compliance:  Pb free and RoHS Compliant  UL recognized (File # E338132)  VDE recognized (file # 40030457) Dimension: (Dot location indicates pin 1) 8-Pin Dip (standard):

Q825 8-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q825 Date: February 1, 2011 Page 2 of 10 Version# 1.1 Wide lead bend (Option W): SMD lead bend (Option S): - All Dimensions are in mm - Tolerance = +/- 0.1mm

Q825 8-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q825 Date: February 1, 2011 Page 3 of 10 Version# 1.1 Absolute Maximum Rating Symbol Parameter Rating Units TSTG Storage Temperature -55 to +150 ºC TOPR Operating Temperature -55 to +100 ºC TSOL Lead Solder Temperature 260 for 10 sec ºC PTOT Total Power Dissipation 200 mW EMITTER IF Continuous Forward Current 60 mA IFP Peak Forward Current (1us, pulse) 1 A VR Reverse Voltage 6 V PD Power Dissipation 100 mW Power Dissipation Derated above 100ºC - mW/ ºC DETECTOR VCEO Collector–Emitter Voltage 40 V VECO Emitter-Collector Voltage 7 V IC Continuous Collector Current 80 mA PC Collector Power Dissipation 150 mW Collector Power Dissipation Derated above 100ºC 5.8 mW/ºC

Q825 8-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q825 Date: February 1, 2011 Page 4 of 10 Version# 1.1 Electrical Characteristic (TA=25 oC) Symbol Characteristic Device Test Condition Range Unit Emitter Min Typ Max VF Forward Voltage Q825 If = 20mA - 1.2 1.4 V IR Reverse Current VR = 4V - - 10 µA Cin Input Capacitance V = 0, f = 1kHz - 30 250 pF Detector Min Typ Max ICEO Collector-Emitter Dark Current Q825 VCE = 10V, IF= 0 mA - - 1 µA BVCEO Collector-Emitter Breakdown Voltage IC = 0.1mA 40 - - V BVECO Emitter-Collector Breakdown Voltage IE = 0.01mA 7 - - V DC Transfer Characteristic Min Typ Max CTR Current Transfer Ratio Q825 VCE = 2V, IF = 1mA 600 - 7500 % VCE(SAT) Collector-Emitter Saturation Voltage IC = 5mA, IF = 20mA - 0.8 1.0 V Isolation Characteristic VISO Isolation Voltage Q825 - 5000 Vrms RIO Isolation Resistance VIO = 500Vdc, 40~60% R.H. 5x1010 - - Ω CIO Floating Capacitance VIO = 0, f = 1MHz - 0.6 1.0 pF AC Characteristic Min Typ Max fc Cut-Off Frequency Q825 VCE = 5V, IC = 2mA, RL = 100 Ω, -3dB - 6 - kHz tr Rise Time VCE = 2V, IC = 10mA, RL = 100 Ω - 60 300 µs tf Fall Time - 53 250 µs

Q825 8-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q825 Date: February 1, 2011 Page 5 of 10 Version# 1.1 Characteristic Curves:

Q825 8-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q825 Date: February 1, 2011 Page 6 of 10 Version# 1.1 Test Circuit for Response Time

Q825 8-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q825 Date: February 1, 2011 Page 7 of 10 Version# 1.1 Solder Profile & Footprint: Recommended Solder Footprint for SMD Leadform Units: mm tolerance: +/- 0.1mm

Q825 8-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q825 Date: February 1, 2011 Page 8 of 10 Version# 1.1 Packing & Labeling: Tape Dimensions:

Q825 8-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q825 Date: February 1, 2011 Page 9 of 10 Version# 1.1 Device Marking: Q = QT-Brightek Corporation Q825 = Device Part Number Y = Year WW = Week V = VDE Option Ordering Information: Part Number Orderable Part Number Options Description Quantity per packing Q825 Q825 None Standard 8pin DIP 50pcs / Tube Q825V None With VDE marking 50pcs / Tube Q825W W Wide lead bend (0.4 inch spacing) 50pcs / Tube Q825WV W Wide lead bend (0.4 inch spacing) + VDE marking 50pcs / Tube Q825STA S SMD lead form with tape and reel option 900pcs / reel Q825STAV S SMD lead form with tape and reel option + VDE marking 900pcs / reel

Q825 8-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q825 Date: February 1, 2011 Page 10 of 10 Version# 1.1 Revision History: Description: Revision # Revision Date Initial release of Q825 1.0 4/23/2010 Feature, certification & compliance and ordering information updates 1.1 02/01/2011 Disclaimer QT-BRIGHTEK reserves the right to make changes without further notice to any products herein to improve reliability, function or design. QT-BRIGHTEK does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. Life Support Policy QT-BRIGHTEK’s products are not authorized for use as critical components in life support devices or systems without the express written approval of QT-BRIGHTEK. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.