Q814 ETC1 | Alldatasheet
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Q814 4-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q814 Date: February 1, 2011 Page 1 of 13 Version# 1.2 Feature: High Isolation voltage between input and output (Viso = 5000V rms) Current transfer ration (CTR: Min. 20% at IF = ±1mA, Vce =5V) High collector-emitter voltage VCEO=80V Operating Temperature up to +100 ºC Compact Dual-in-line Package Available packaged in Tube or Tape and reel Available with standard DIP-4, Wide lead bend, and SMD lead bend options. Conventional black housing package Schematic: Certification & Compliance: Pb free and RoHS Compliant UL recognized (File # E338132) VDE recognized (File # 40030457)
Q814 4-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q814 Date: February 1, 2011 Page 2 of 13 Version# 1.2 Dimension: 4-Pin Dip (standard): Wide lead bend (Option W):
Q814 4-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q814 Date: February 1, 2011 Page 3 of 13 Version# 1.2 SMD lead bend (Option S): All Dimensions are in mm Tolerance = +/- 0.1mm
Q814 4-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q814 Date: February 1, 2011 Page 4 of 13 Version# 1.2 Absolute Maximum Rating: Symbol Parameter Rating Units Q814 TSTG Storage Temperature -55 ~ +150 ºC TOPR Operating Temperature -55 ~ +100 ºC TSOL Lead Solder Temperature 260 for 10 sec ºC PTOT Total Power Dissipation 200 mW EMITTER IF Continuous Forward Current 60 mA PD Power Dissipation 100 mW Power Dissipation Derated above 100ºC 2.9 mW/ºC DETECTOR VCEO Collector–Emitter Voltage 80 V VECO Emitter-Collector Voltage 6 V PC Collector Power Dissipation 150 mW Collector Power Dissipation Derated above 80 ºC 5.8 mW/ºC
Q814 4-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q814 Date: February 1, 2011 Page 5 of 13 Version# 1.2 Electrical Characteristic (TA=25 oC) Emitter Symbol Characteristic Device Test Condition Range Unit Min Typ Max VF Forward voltage Q814 IF = 20mA - 1.2 1.4 V Cin Input capacitance Q814 V = 0, f = 1KHz - 50 250 pF Detector Symbol Characteristic Device Test Condition Range Unit Min Typ Max ICEO Collector- Emitter dark current Q814 VCE = 20V, IF = 0mA - - 100 µA BVCEO Collector- Emitter breakdown voltage Q814 IC = 0.1mA 80 - - V BVECO Emitter- collector breakdown voltage Q814 IE = 0.1mA 6 - - V
Q814 4-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q814 Date: February 1, 2011 Page 6 of 13 Version# 1.2 DC Transfer Characteristic Symbol Characteristic Device Test Condition Range Unit Min Typ Max CTR Current Transfer Ratio Q814 IF = 1mA, VCE = 5V 20 - 300 % Q814A 50 - 150 VCE(Sat) Collector-Emitter saturation voltage Q814 IF = 20mA, IC = 1mA - 0.05 0.2 V AC Characteristic Symbol Characteristic Device Test Condition Range Unit Min Typ Max fc Cut-off frequency Q814 Vce = 5V, IC = 2mA RL = 100Ω, -3dB - 80 - KHz tr Rise time Q814 Vce = 2V, IC = 2mA RL = 100Ω, - 7 18 µs tf Fall time Q814 Vce = 2V, IC = 2mA RL = 100Ω, - 11 18 µs Isolation Characteristic Symbol Characteristic Device Test Condition Range Unit Min Typ Max RISO Isolation Resistance Q814 VIO = 500Vdc, 40~60% R.H. 5x1010 1011 - Ω CISO Isolation Capacitance Q814 VIO = 0, f = 1MHz - 0.6 1.0 PF VISO Isolation Voltage Q814 f = 60Hz, t = 1 min, II-O ≤ 2µA 5000 - - V rms
Q814 4-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q814 Date: February 1, 2011 Page 7 of 13 Version# 1.2 Characteristic Curves:
Q814 4-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q814 Date: February 1, 2011 Page 8 of 13 Version# 1.2
Q814 4-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q814 Date: February 1, 2011 Page 9 of 13 Version# 1.2 Test Circuit for Response Time Solder Reflow Temperature Profile:
Q814 4-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q814 Date: February 1, 2011 Page 10 of 13 Version# 1.2 Solder Profile & Footprint: Recommended Solder Footprint for SMD Leadform Units: mm tolerance: +/- 0.1mm Device Marking: Q = QT-Brightek Corporation Q814 = Device Part Number F = Country of Origin R = Binning Option Y = Year WW = Week V = VDE Option
Q814 4-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q814 Date: February 1, 2011 Page 11 of 13 Version# 1.2 Tape and Reel Packing Specifications: Tape Dimensions:
Q814 4-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q814 Date: February 1, 2011 Page 12 of 13 Version# 1.2 Ordering Information: Part Number Orderable Part Number Options Description Quantity per packing Q814 Q814 None Standard 4pin DIP 100pcs / Tube Q814V None With VDE marking 100pcs / Tube Q814W W Wide lead bend (0.4 inch spacing) 100pcs / Tube Q814WV W Wide lead bend (0.4 inch spacing) + VDE marking 100pcs / Tube Q814STA S SMD lead form with tape and reel option 2000pcs / reel Q814STAV S SMD lead form with tape and reel option + VDE marking 2000pcs / reel
Q814 4-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Product: Q814 Date: February 1, 2011 Page 13 of 13 Version# 1.2 Revision History: Description: Revision # Revision Date Initial release of Q814 1.0 4/22/2010 Add binning option 1.1 6/23/2010 Feature, certification & compliance and ordering information updates 1.2 02/01/2011 Disclaimer QT-BRIGHTEK reserves the right to make changes without further notice to any products herein to improve reliability, function or design. QT-BRIGHTEK does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. Life Support Policy QT-BRIGHTEK’s products are not authorized for use as critical components in life support devices or systems without the express written approval of QT-BRIGHTEK. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.