Q6040K7TP LITTELFUSE | Alldatasheet
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Technical content
Revised: June 24, 2011 04:57 PM ©2011 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information.
40 Amp Alternistor (High Commutation) Triacs
Description
40 Amp bi-directional solid state switch series is designed
for AC switching and phase control applications such as motor speed and temperature modulation controls, lighting controls, and static switching relays. Alternistor type devices only operate in quadrants I, II, & III and are used in circuits requiring high dv/dt capability.Main Features Symbol Value Unit IT(RMS) 40 A VDRM/VRRM 400 to 1000 V IGT (Q1) 50 to 100 mA Features & Benefits
- RoHS Compliant
- Glass – passivated junctions
- Voltage capability up to 1000V
- Surge capability up to 400A
- Electrically isolated K & J -Packages are UL recognized for 2500Vrms
Applications
Excellent for AC switching and phase control applications such as heating, lighting, and motor speed controls. Typical applications are AC solid-state switches, industrial power tools, exercise equipment, white goods and commercial appliances. Alternistor Triacs (no snubber required) are used in applications with extremely inductive loads requiring highest commutation performance. Internally constructed isolated packages are offered for ease of heat sinking with highest isolation voltage. Schematic Symbol Agency Approval Agency Agency File Number ® K & J Packages: E71639 MT1 G MT2
Revised: June 24, 2011 04:57 PM ©2011 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Electrical Characteristics (TJ = 25°C, unless otherwise specified) — Alternistor T riac (3 Quadrants) Symbol Test Conditions Quadrant Value Unit Qxx40xH6 Qxx40K5 Qxx40x7 IGT VD = 12V RL = 60 Ω I – II – III MAX. 80 50 100 mA VGT I – II – III MAX. 1. 3 1. 3 2.0 V VGD VD = VDRM RL = 3.3 kΩ TJ = 125°C I – II – III MIN. 0.2 V IH IT = 400mA MAX. 80 75 100 mA dv/dt VD = VDRM Gate Open TJ = 125°C 400V MIN. 600 500 700 V/μs 600V 500 475 625 800V 475 400 575 VD = VDRM Gate Open TJ = 100°C 1000V - - 500 (dv/dt)c (di/dt)c = 21 .6 A/μs TJ = 125°C MIN. 30 20 50 V/µs tgt IG = 2 x IGT PW = 15µs IT = 56.6A(pk) TYP . 5 µs Static Characteristics Symbol Test Conditions Value Unit VTM ITM = 56.6A tp = 380 µs TJ = 25°C MAX. 1. 8 V IDRM IRRM VD = VDRM / VRRM TJ = 25°C 400 –1000V MAX. 20 μA TJ = 125°C 400 – 800V MAX. 5 mA TJ = 100°C 1000V MAX. 5 mA Thermal Resistances Symbol Parameter Value Unit Rθ(J-C) Junction to case (AC) Qxx40KH6 Qxx40K5 Qxx40K7 0.97 °C/W Qxx40JH6 Qxx40J7 0.95 Note: xx = voltage Absolute Maximum Ratings — Alternistor T riac (3 Quadrants) Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) Qxx40x7 Qxx40xH6 TC = 75°C 40 A ITSM Non repetitive surge peak on-state current (full cycle, TJ initial = 25°C) f = 50 Hz t = 20 ms 335 A f = 60 Hz t = 16.7 ms 400 I2t I2t Value for fusing tp = 8.3 ms 664 A2s di/dt Critical rate of rise of on-state current (IG = 2 x IGT, tr ≤ 100 ns) f = 120 Hz TJ = 125°C 150 A/μs IGTM Peak gate trigger current tp ≤ 10 μs IGT ≤ IGTM TJ = 125°C 4 A PG(AV) Average gate power dissipation TJ = 125°C 0.8 W Tstg Storage temperature range -40 to 150 °C TJ Operating junction temperature range -40 to 125 °C Note: xx = voltage, x = package
Revised: June 24, 2011 04:57 PM ©2011 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Figure 1: Definition of Quadrants Figure 3: Normalized DC Holding Current vs. Junction T emperature Figure 2: Normalized DC Gate T rigger Current for All Quadrants vs. Junction T emperature Figure 4: Normalized DC Gate T rigger Voltage for All Quadrants vs. Junction T emperature +125 0.0 1.0 2.0 3.0 4.0 -40 -15 10 35 60 85 110 Junction Temperature -- (°C) Ratio of IGT / IGT (TJ = 25°C) + 125 0.0 1.0 2.0 3.0 4.0 -40 -15 10 35 60 85 110 Ratio of IIH / IIH (TJ = 25°C) Junction Temperature - °C +125 0.0 0.5 1.0 1.5 2.0 -40- 15 10 35 60 85 110 Ratio of VGT / VGT (TJ = 25°C) Junction Temperature - °C MT2 POSITIVE (Positi ve Half Cycle) MT2 NEGATIVE (Negative Half Cycle) NOTE: Alternistor s will not operate in QIV MT1 MT2 + IGT REF QII MT1 IGT GATE MT2 REF MT1 MT2 REF MT1 MT2 REF QI QIV QIII ALL POLARITIES ARE REFERENCED TO MT1 (-) IGT GATE (+) IGT - IGT GATE (-) IGT GATE (+) Note: Alternistors will not operate in QIV 0 4 8 12 16 20 24 28 32 36 40 RMS On-State Current [IT(RMS)] - AMPS Average On-State Power Dissipation [PD (AV)] - Watts Figure 5: Power Dissipation (T ypical) vs. RMS On-State Current Figure 6: Maximum Allowable Case T emperature vs. On-State Current 100 110 120 130 0 5 10 15 20 25 30 35 40 45 50 RMS On-State Current [IT(RMS)] - AMPS Max Allowable Case Temperature (TC) - ºC
Revised: June 24, 2011 04:57 PM ©2011 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Surge Current Duration – Full Cycles Peak Surge (Non-repetitive) On-State Current (ITSM ) – Amps 100 1000 Figure 8: Surge Peak On-State Current vs. Number of Cycles Supply Frequency: 60Hz Sinusoidal Load: Resistive RMS On-State [IT(RMS)]: Max Rated Value at Specific Case Temperature Notes: 1) Gate control may be lost during and immediately following surge current interval. 2) Overload may not be repeated until junction temperature has returned to steady-state rated value. Figure 7: On-State Current vs. On-State Voltage (T ypical) TC = 25ºC Positive or Negative Instantaneous On-State Voltage (vT) - Volts Positive or Negative Instantaneous On-State Current (iT) - AMPS Note: xx = voltage
Revised: June 24, 2011 04:57 PM ©2011 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Reflow Condition Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus Temp) (TL) to peak 5°C/second max TS(max) to TL - Ramp-up Rate 5°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Time (min to max) (ts) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (t p) 20 – 40 seconds Ramp-down Rate 5°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 280°C Physical Specifications Environmental Specifications Test Specifications and Conditions AC Blocking MIL-STD-750, M-1040, Cond A Applied Peak AC voltage @ 125°C for 1008 hours T emperature Cycling MIL-STD-750, M-1051, 100 cycles; -40°C to +150°C; 15-min dwell-time T emperature/ Humidity EIA / JEDEC, JESD22-A101 1008 hours; 320V - DC: 85°C; 85% rel humidity High T emp Storage MIL-STD-750, M-1031, 1008 hours; 150°C Low-T emp Storage 1008 hours; -40°C Thermal Shock MIL-STD-750, M-1056 10 cycles; 0°C to 100°C; 5-min dwell- time at each temperature; 10 sec (max) transfer time between temperature Autoclave EIA / JEDEC, JESD22-A102 168 hours (121°C at 2 ATMs) and 100% R/H Resistance to Solder Heat MIL-STD-750 Method 2031 Solderability ANSI/J-STD-002, category 3, Test A Lead Bend MIL-STD-750, M-2036 Cond E T erminal Finish 100% Matte Tin-plated. Body Material UL recognized epoxy meeting flammability classification 94V-0. Lead Material Copper Alloy Design Considerations Careful selection of the correct device for the application’s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the device rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Time Temperature TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-do
Revised: June 24, 2011 04:57 PM ©2011 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Dimensions — TO-218X (J Package) — Isolated Mounting T ab Dimension Inches Millimeters Min Max Min Max A 0.810 0.835 20.57 21 .21 B 0.610 0.630 15.49 16.00 C 0.178 0.188 4.52 4.78 D 0.055 0.070 1 .40 1 .78 E 0.487 0.497 12.37 12.62 F 0.635 0.655 16.13 16.64 G 0.022 0.029 0.56 0.7 4 H 0.075 0.095 1 .91 2.41 J 0.575 0.625 14.61 15.88 K 0.256 0.264 6.50 6.71 L 0.220 0.228 5.58 5.79 M 0.080 0.088 2.03 2.24 N 0.169 0.177 4.29 4.49 P 0.034 0.042 0.86 1 .07 R 0.113 0.121 2.87 3.07 S 0.086 0.096 2.18 2.44 T 0.156 0.166 3.96 4.22 U 0.164 0.165 4.10 4.20 V 0.603 0.618 15.31 15.70 W 0.000 0.005 0.00 0.13 X 0.003 0.012 0.07 0.30 Y 0.028 0.032 0.71 0.81 Z 0.085 0.095 2.17 2.42 Dimensions — TO-218AC (K Package) — Isolated Mounting T ab Dimension Inches Millimeters Min Max Min Max A 0.810 0.835 20.57 21 .21 B 0.610 0.630 15.49 16.00 C 0.178 0.188 4.52 4.78 D 0.055 0.070 1 .40 1 .78 E 0.487 0.497 12.37 12.62 F 0.635 0.655 16.13 16.64 G 0.022 0.029 0.56 0.7 4 H 0.075 0.095 1 .91 2.41 J 0.575 0.625 14.61 15.88 K 0.211 0.219 5.36 5.56 L 0.422 0.437 10.72 11. 10 M 0.058 0.068 1 .47 1 .73 N 0.045 0.055 1. 14 1 .40 P 0.095 0.115 2.41 2.92 Q 0.008 0.016 0.20 0.41 R 0.008 0.016 0.20 0.41 U 0.164 0.165 4.10 4.20 W 0.085 0.095 2.17 2.42 G R Y H D C K B A E F N T M P J L S V U DIA. W X MT1 MT2 Tc Measurement Point Gate Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm). Z C D H G F B A E TC Measurement Point U (diameter) P Gate J MT2 MT1 M N K L R Q Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm). W
Revised: June 24, 2011 04:57 PM ©2011 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Q : Alternistor Triac CURRENT 40 : 40A PACKAGE TYPE K : TO-218AC Isolated J : TO-218X Isolated VOLTAGE 40 : 400V 60 : 600V 80 : 800V K0 : 1000V SENSITIVITY H6: 80mA (QI, II, III) 7 : 100mA (QI, II, III) Q 60 40 K 7 5 : 50mA, (QI, II, III) Part Numbering System Part Marking System TO-218 AC (K Package) TO-218 X – (J Package) YMLXX Q6040K7 Packing Options Part Number Marking Weight Packing Mode Base Quantity Qxx40KH6TP Qxx40KH6 4.40g Tube 250 (25 per tube) Qxx40JH6TP Qxx40JH6 5.23g Tube 250 (25 per tube) Qxx40K5TP Qxx40K5 4.40g Tube 250 (25 per tube) Qxx40K7TP Qxx40K7 4.40g Tube 250 (25 per tube) Qxx40J7TP Qxx40J7 5.23g Tube 250 (25 per tube) Note: xx = Voltage Product Selector Part Number Voltage Gate Sensitivity Quadrants IT(RMS) Type Package 400V 600V 800V 1000V I – II – III IV Qxx40KH6 X X X X 80mA 40A Alternistor Triac TO-218AC Qxx40JH6 X X X 80mA 40A Alternistor Triac TO-218X Qxx40K5 X X X 50mA 40A Alternistor Triac TO-218AC Qxx40K7 X X X X 100 mA 40A Alternistor Triac TO-218AC Qxx40J7 X X X 100 mA 40A Alternistor Triac TO-218X Note: xx = Voltage